• 전기전자학회논문지
• /
• 제23권2호
• /
• pp.704-709
• /
• 2019

본 논문에서는 다양한 열처리(annealing) 조건에서 tunneling field effect transistor(TFET)의 전기적 특성을 연구 하였다. TFET 샘플은 수소 혼합 가스(4 %) 및 중수소($D_2$) 혼합 가스 (4 %)를 사용하여 열처리를 진행하였으며 측정은 노이즈 차폐실에서 진행되었다. 실험 결과, 열처리 전과 비교하여 열처리 공정 후에 subthreshold slope(SS)이 33 mV / dec만큼 감소함을 확인할 수 있었다. 그리고 측정 온도 범위에서 온도가 증가할수록 $V_G=3V$ 조건에서 10 기압의 중수소 혼합 가스에 대해 평균 31.2 %의 노이즈가 개선됨을 확인할 수 있었다. $D_2$ 혼합 가스로 메탈 증착 후 열처리 공정(post metal annealing)을 실시한 결과, $I_D=100nA$ 조건에서 평균 30.7 %의 노이즈가 감소되었음을 확인할 수 있다.

• 한국표면공학회지
• /
• 제35권1호
• /
• pp.39-46
• /
• 2002

$Cu_2$$ZnSnS_4$(CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. Thin films were deposited on ITO glass substrates using a compact target which were made by $Cu_2$S, ZnS, SnS$_2$ powder at room temperature by rf magnetron sputtering and were annealed in the atmosphere of Ar and $S_2$(g). We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2$$ZnSnS_4$ composition. Structure was coarsened with increasing temperature and (112), (200), (220), (312) planes appeared to conform to all the reflection Kesterite structure. A (112) preferred orientation was advanced with increasing the annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.51 to 1.8eV as the annealing temperature increased. The optical absorption coefficient of the thin film was about $10^4$$cm^{-1}$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.292-292
• /
• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 하계학술대회 논문집 C
• /
• pp.1476-1478
• /
• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• 열처리공학회지
• /
• 제17권5호
• /
• pp.283-292
• /
• 2004

The effects of the annealing parameters on microstructures were examined in a cold-rolled high strength steel containing 0.1% C, 0.5% Si, 1.5% Mn, and 0.04% Nb. It was impossible to avoid martensite in the microstructure even though the continuous annealing parameters were controlled. This indicates that the alloying elements such as silicon and manganese contributing to manganese equivalent($Mn_{eq}$) should be reduced to produce the ferrite-pearlite microstructure for the solid solution and precipitation hardened steel. It was found that a decrease in the rapid cooling temperature to $520^{\circ}C$ was effective to change the microstructure from ferrite-martensite to ferrite-pearlite-martensite. Typical dual-phase properties exhibiting a low yield ratio and a continuous yielding behavior were obtained when the rapid cooling temperature was in the range of $680^{\circ}C$ to $600^{\circ}C$. The critical volume fraction of martensite for the typical properties of dual-phase steel was about 11 percent.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2009년도 춘계학술대회 논문집
• /
• pp.231-234
• /
• 2009

The effects of annealing temperature and time on mechanical properties and microstructures were already investigated in cold drawn pearlitic steel wires. During annealing, the increment of the tensile strength at low temperatures found to be due to age hardening, while the decrease in the tensile strength at high temperatures was attributed to age softening, involving the spheroidization of lamellar cementite and recovery of lamellar ferrite. Since Between increase of tensile strength and the occurrence of the delamination would be closely related to the dissolution of cementite, the increase of drawing strain by lower annealing temperature caused the between higher tensile strength and the easier occurrence of the delamination in cold drawn pearlitic steel wires.

• 한국재료학회지
• /
• 제21권12호
• /
• pp.655-659
• /
• 2011

An ultrafine grained complex aluminum alloy was fabricated by an accumulative roll-bonding (ARB) process using dissimilar aluminum alloys of AA1050 and AA5052 and subsequently annealed. A two-layer stack ARB process was performed up to six cycles without lubricant at an ambient temperature. In the ARB process, the dissimilar aluminum alloys, AA1050 and AA5052, with the same dimensions were stacked on each other after surface treatment, rolled to the thickness reduction of 50%, and then cut in half length by a shearing machine. The same procedure was repeated up to six cycles. A sound complex aluminum alloy sheet was fabricated by the ARB process, and then subsequently annealed for 0.5h at various temperatures ranging from 100 to $350^{\circ}C$. The tensile strength decreased largely with an increasing annealing temperature, especially at temperatures of 150 to $250^{\circ}C$. However, above $250^{\circ}C$ it hardly decreased even when the annealing temperature was increased. On the other hand, the total elongation increased greatly above $250^{\circ}C$. The hardness exhibited inhomogeneous distribution in the thickness direction of the specimens annealed at relatively low temperatures, however it had a homogeneous distribution in specimens annealed at high temperatures.

• 한국전기전자재료학회논문지
• /
• 제37권3호
• /
• pp.253-260
• /
• 2024

In this study, ITO thin films were fabricated on a glass substrate at different thicknesses without introducing oxygen using RF sputtering system. The structural, electrical, and optical properties were evaluated at various thicknesses ranging from 50 to 300 mm. As the thickness of deposited ITO thin film become thicker from 50 to 100 mm, carrier concentration, mobility, and band gap energy also increased while the resistivity and transmittance decreased in the visible light region. When the film thickness increased from 100 to 300 mm, the carrier concentration, mobility, and band gap energy decreased while the resistivity and transmittance increased. The optimum electrical properties were obtained for the ITO film 100 nm. After optimizing the thickness, the ITO thin films were post-annealed at different temperatures ranging from 100 to 300℃. As the annealing temperature increased, the ITO crystal phase became clearer and the grain size also increased. In particular, the ITO thin film annealed at 300℃ indicated high carrier concentration (4.32 × 10²¹ cm^-3), mobility (9.01 cm²/V·s) and low resistivity (6.22 × 10^-4 Ω·cm). This means that the optimal post-annealing temperature is 300℃ and this ITO thin film is suitable for use in solar cells and display application.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.64-67
• /
• 2000

Tungsten silicide(WSi$_2$) is proposed for the alternate gate electrode of ULSI MOS devices. Good structural property and low resistivity of WSi$_2$ deposited by a low pressure chemical vapor deposition(LPCVD) method directly on SiO$_2$ is obtained after annealing. Especially, WSi$_2$-SiO2 interface remains flat after annealing tungsten silicide at high temperature. Electrical characteristics of annealed WSi$_2$-SiO$_2$-Si(MOS) capacitors were improved in view of charge trapping.

• 한국전기전자재료학회논문지
• /
• 제14권2호
• /
• pp.123-129
• /
• 2001

The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.