• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.435-438
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• 2007

$V_{2}O_{5}$ was tested as a p-dopant for lower operating voltage and higher stability of OLEDs. Low voltage and high stability were achieved using this doping layer. It can be separated to bulk and interface contributions and the latter is a more dominant factor both of operation voltage and stability.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2089-2091
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• 2000

Pulsed power systems consist of a capacitor bank, an isolated high-voltage charging power-supply, high-current bus-work for charging and discharging and a control system. In such pulsed power systems, the operating-lifetime of the capacitors is closely dependent on the voltage reversal. Hence, most capacitor-discharging systems includes crowbar circuits. The crowbar circuit prevents the capacitor recharging with reverse voltage. Usually it consists of crowbar resistors and high pulse-current diode-stacks connected in series. The requirements for the diode-stacks are fast-recovery time and high-voltage and large-current ratings, which results in the high cost of the pulsed-power system. This paper presents a protection scheme of a charging and discharging system of a 500kJ capacitor bank using a low-cost crowbar circuit and safety-fuses.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.375-378
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• 2013

A reference voltage generator which is insensitive to PVT (process-voltage-temperature) variation necessary for NVM memory IPs such as EEPROM and MTP memories is designed in this paper. The designed BGR (bandgap reference voltage) circuit based on MagnaChip's $0.18{\mu}m$ EEPROM process uses a low-voltage bandgap reference voltage generator of cascode current-mirror type with a wide swing and shows a reference voltage characteristic insensitive to PVT variation. The minimum operating voltage is 1.43V and the VREF sensitivity against VDD variation is 0.064mV/V. Also, the VREF sensitivity against temperature variation is $20.5ppm/^{\circ}C$. The VREF voltage has a mean of 1.181V and its three sigma ($3{\sigma}$) value is 71.7mV.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.11
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• pp.1512-1516
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• 2018

The power system and control system constantly reveals surge voltage such as switching surge of lighting devices and power conversion devices, operating and stops surge of rotating devices, charge & discharge surge, opening & closing surge of circuit breakers and the like. Such a surge voltages can cause damage or malfunction of the element such as CPU, Memory, semiconductor etc. In the industry, in order to protect the system from the surge voltage, a surge protector with low discharge starting voltage, fast response time, and low capacitance is required, and technical development research for that is ongoing. In this paper, in order to solve the problem of the existing GDT discharge tube not discharging from the transient voltage which is higher than the commercial voltage and lower than the discharge voltage of the discharge element, we have developed a discharge element having the control electrode & control circuit. The discharge element having the control electrode and the control circuit can control the discharge voltage according to the needs of the consumer and can satisfy the requirement of the discharge element and the technology of the surge protector downsizing technology and the surge protection technology. It is judged to be effective for development.

• Journal of IKEEE
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• v.24 no.1
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• pp.364-367
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• 2020

This paper presents the off-grid PV-ESS system of sequential voltage control method applied to OR logic gate. The conventional off-grid PV-ESS system with the low-voltage series connection has problems due to capacity expansion. To solve these problems, this paper proposes a noble PV-ESS system with high efficiency and low cost by applying sequential voltage control technique of the high-voltage series connection of analog circuit type. The input voltage of DC to AC inverter can be converted from the low-voltage by the combinations of series connection of the conventional cascaded 24V solar cell unit modules to the high-voltage of 384V in battery. The output voltage of the battery was 384V as the each input voltage of three phase DC to AC inverter, and the each output voltage of three phase 10kW DC to AC inverter is designed to be AC380V@60Hz as the line to line rms voltage value. To prove the validity of the theoretical analysis by PSIM simulation, the operating characteristics of sequential voltage control system with OR logic gate were confirmed through experiment results.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.75-79
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• 2001

This paper presents a novel version of an active voltage clamped ZVS-PWM high frequency inverter using IGBTs for electromagnetic induction eddy current-based rolling drum heating in new generation copy and printing machines in consumer business use. The operating principle of this inverter circuit and unique features are described herein. Its constant frequency duty cycle (asymmetrical PWM) controlled voltage source quasi-resonant soft switching high frequency inverter employing IGBTs is proposed, which is capable of achieving stable and efficient zero voltage soft switching commutation over a widely specified power regulation range from full power to low power. The operating performances in a steady state of this inverter is discussed and evaluated on basis of simulation and experimental results as an induction heated roller in new generation copy machine.

• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1656-1663
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• 2016

A capacitive wireless power transfer (C-WPT) system uses an electric field to transmit power through a physical isolation barrier which forms a pair of ac link capacitors between the metal plates. However, the physical dimension and low dielectric constant of the interface medium severely limit the effective link capacitance to a level comparable to the main switch output capacitance of the transmitting circuit, which thus narrows the soft-switching range in the light load condition. Moreover, by fundamental limit analysis, it can be proved that such a low link capacitance increases operating frequency and capacitor voltage stress in the full load condition. In order to handle these problems, this paper investigates optimal design of double matching transformer networks for C-WPT. Using mathematical analysis with fundamental harmonic approximation, a design guideline is presented to avoid unnecessarily high frequency operation, to suppress the voltage stress on the link capacitors, and to achieve wide ZVS range even with low link capacitance. Simulation and hardware implementation are performed on a 5-W prototype system equipped with a 256-pF link capacitance and a 200-pF switch output capacitance. Results show that the proposed scheme ensures zero-voltage-switching from full load to 10% load, and the switching frequency and the link capacitor voltage stress are kept below 250 kHz and 452 V, respectively, in the full load condition.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.189-197
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• 2017

This paper elaborates two novel proposed topologies (type-I and type-II) of the high step-up DC-DC converter using switched inductor and voltage multiplier cell. The advantages of these proposed topologies are the less voltage stress on semiconductor devices, low device count, high power conversion efficiency, high switch utilization factor and high diode utilization factor. We analyze the Type-II topologies operating principle and mathematical analysis in detail in continuous conduction mode. High-intensity discharge lamp for the automotive application can use the derived topologies. The proposed converters give better performance when compared to the existing types. Also, it is found that the proposed type-II converter has relatively higher voltage gain compared to the type-I converter. A 40 W, 12 V input voltage and 72 V output voltage has developed for the type-II converter and the performances are validated.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.473-477
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• 2007

The development of advanced Insulated Gate Bipolar Transistor(IGBT)has enabled high-frequency switching operation and has improved the performance of PWM inverters for motor drive. However, the high rate of dv/dt of IGBT has adverse effects on motor insulation stress. In many motor drive applications, the inverter and motor are separated and it requires long motor feds. The long cable contributes high frequency ringing at the motor terminal and it results in hight surge voltage which stresses the motor insulation. The inverter output filter and RDC snubber are conventional method which can reduce the surge voltage. In this paper, we propose the new low loss snubber to reduce the motor terminal surge voltage. The snubber consists of the series connection of charging/discharging capacitor and the voltage-clamped capacitor. At IGBT turn-off, the snubber starts to operate when the IGBT voltage reaches the voltage-clamped level. Since dv/dt is decreased by snubber operating, the peak level of the surge voltage can be reduced. Also the snubber operates at the IGBT voltage above the voltage-clamped level, the snubber loss is largely reduced comparing with RDC snubber. The proposed snubber enables to reduce the motor terminal surge voltage with low loss.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.31-35
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• 2001

IGCTs have established themselves as the power semiconductor of choice at medium voltage levels within the last few years because of their low conduction and switching losses. The trade-off between these losses can be adjusted by various lifetime control techniques and the growing demand for these devices is driving the need for standard types to cover such applications as Static Circuit Breakers (low on-state) and Medium Voltage Drives (low switching losses). The additional demands of Traction (low operating temperatures) and Current Source Inverters (symmetric blocking) would normally result in conflicting demands on the semiconductor. This paper will outline how a range of power devices can meet these needs with a limited number of wafers and gate units. Some of the key differences between IGCTs and IGBTs will be explained and the outlook for device improvements will be discussed.