• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.867-869
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• 1993

In generally Boost Converter is used for Fuel Cell System. Because the output voltage of fuel cell is too small and greatly depends on the load condition, Boost Converter are required to boost and regulate the Fuel Cell voltage for per conversion efficiency. In this Paper, 6-phase Boost Converter is used to boost the Fuel Cell Voltage and regulate the output voltage. Multi phase converter hag some advantages such as low ripple and filter sine. About the Peak Current Control and compare of the Ripple Current of Boost Converter, we have studied.

• Journal of Power Electronics
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• v.17 no.6
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• pp.1402-1412
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• 2017

This paper presents a new high step-up dc/dc converter for renewable energy systems in which a high voltage gain is provided by using a coupled inductor. The operation of the proposed converter is based on a charging capacitor with a single power switch in its structure. A passive clamp circuit composed of capacitors and diodes is employed in the proposed converter for lowering the voltage stress on the power switch as well as increasing the voltage gain of the converter. Since the voltage stress is low in the provided topology, a switch with a small ON-state resistance can be used. As a result, the losses are decreased and the efficiency is increased. The operating principle and steady-states analyses are discussed in detail. To confirm the viability and accurate performance of the proposed high step-up dc-dc converter, several simulation and experimental results obtained through PSCAD/EMTDC software and a built prototype are provided.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.2
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• pp.82-89
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• 2018

This paper presents a novel prototype of dual mode control based phase shift ZVS PWM high frequency load resonant inverter with lossless snubber capacitors in addition to a single active auxiliary resonant snubber for electromagnetic induction heating(IH) foam metal based consumer fluid dual packs(DPA) heater. The operating principle in steady state and unique features of this voltage source soft switching high frequency inverter circuit topology are described in this paper. The lossless snubber and auxiliary active resonant snubber assisted constant frequency phase shift ZVS PWM high frequency load resonant inverter employing IGBT power modules actually is capable of achieving zero voltage soft commutation over a widely specified power regulation range from full power to low power. The steady state operating performances of this dual mode phase shift PWM series load resonant high frequency inverter are evaluated and discussed on the basis of simulation and experimental results for induction heated foam metal heater which is designed for compact and high efficient moving fluid heating appliance in the consumer pipeline systems.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.4
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• pp.19-27
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• 2007

This paper presents a novel soft-switching PWM utility frequency AC to high frequency AC power conversion circuit incorporating boost H-bridge inverter topology, which is more suitable and acceptable for cost effective consumer induction heating applications. The operating principle and the operation modes are presented using the switch mode equivalent circuits and the operating voltage and current waveforms. The performances of this high-frequency inverter using the latest IGBTs are illustrated, which includes high frequency power regulation and actual efficiency characteristics based on zero voltage soft-switching(ZVS) operation ranges, and the power dissipation as compared with those of the conventional type high frequency inverter. In addition, a dual mode control scheme of this high frequency inverter based on asymmetrical pulse width modulation(PWM) and pulse density modulation(PDM) control scheme is discussed in this paper in order to extend the soft switching operation ranges and to improve the power conversion efficiency at the low power settings. The power converter practical effectiveness is substantially proved based on experimental results from practical design example.

• Journal of Power Electronics
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• v.17 no.3
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• pp.601-609
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• 2017

Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.5
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• pp.52-58
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• 2001

In this paper, the low voltage linear tunable transconductors using the series composite transistor are presented. Due to the series composite transistor operating in the saturation region and the triode region, the proposed circuits have wide input range at low supply voltage. The designed transconductors have been simulated by HSPICE using $0.25{\mu}m$ n-welll CMOS process. Simulation results show that the cutoff frequency is 309M Hz and the THD of less than 1.1% can be obtained for the differential input signal of up to l.5VP-P with the input signal frequency of l0MHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.409-417
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• 2003

We have studied electrical properties and luminous efficiency of organic light-emitting diodes(OLEDs) with different buffer layer and cathodes in a temperature range of 10 K and 300 K. Four different device structures were made. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinato) aluminum(III) (Alq$_3$) as an electron transport and omissive layer, and poly(3,4-ethylenedioxythiophene) :poly (styrenesulfonate) (PEDOT:PSS ) as a buffer layer. And LiAl was used as a cathode. Among the devices, the ITO/PEDOT:PSS/TPD/Alq$_3$/LiAl structure has a low energy-barrier height for charge injection and show a good luminous efficiency. We have got a highly efficient and low-voltage operating device using the conductive PEDOT:PSS and low work-function LiAl. From current-voltage characteristics with temperature variation, conduction mechanisms are explained SCLC (space charge limited current) and tunneling one. We have also studied energy barrier height and luminous efficiency at various temperature.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1609-1618
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• 2015

DC microgrids are considered as prospective systems because of their easy connection of distributed energy resources (DERs) and electric vehicles (EVs), reduction of conversion loss between dc output sources and loads, lack of reactive power issues, etc. These features make them very suitable for future industrial and commercial buildings' power systems. In addition, the bipolar-type dc system structure is more popular, because it provides two voltage levels for different power converters and loads. To keep voltage balanced in such a dc system, a bidirectional dual buck-boost voltage balancer with direct coupling is introduced based on P-cell and N-cell concepts. This results in greatly enhanced system reliability thanks to no shoot-through problems and lower switching losses with the help of power MOSFETs. In order to increase system efficiency and reliability, a novel burst-mode control strategy is proposed for the dual buck-boost voltage balancer. The basic operating principle, the current relations, and a small-signal model of the voltage balancer are analyzed under the burst-mode control scheme in detail. Finally, simulation experiments are performed and a laboratory unit with a 5kW unbalanced ability is constructed to verify the viability of the bidirectional dual buck-boost voltage balancer under the proposed burst-mode control scheme in low-voltage bipolar-type dc microgrids.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.477-480
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• 2015

In this paper a low-voltage vibration energy harvesting circuit with MPPT(Maximum Power Point Tracking) control is proposed. By employing bulk-driven technique, the minimum operating voltage of the proposed circuit is as low as 0.8V. The designed MPPT control circuit traces the maximum power point by periodically sampling the open circuit voltage of a full-wave rectifier circuit connected to the piezoelectric device output and delivers the maximum available power to load. The proposed circuit is designed using a $0.35{\mu}m\;CMOS$ process, and the chip area including pads is $1.33mm{\times}1.31mm$. Simulation results show that the maximum power efficiency of the designed circuit is 85.49%.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.8-14
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• 1998

A new process is developed to improve the electrical characteristics of high .beta. and low saturation voltage power transistor for lamp solenoid driver application. To prevent punch-through breakdown, appropriate combination of base doping and base width is necessary in the range of operating voltage of the circuit. The optimum values of base doping and sheet resistance are $Q_{D}$= $1.5{\times}10^{14}$atoms/$\textrm{cm}^2$ and $R_{s}$= 350 $\Omega/\square$ base wodtj $W_{B}$= $2.5{\mu}m$respectively. Under this condition it is possible to control $\beta$ of the transistor to 1500, maintaining $VB_{CBO}$ =200V. To reduce scattered distribution of .beta. of the devices on the wafer, it is necessary to improve emittter predeposition process. As a result, scattered distribution of .beta. of the devices on the wafer was reduced to 1/6 by using the new process. To improve collector to emitter forward voltage drop, $V_{ECF}$ of damper diode, an additional silicon etching process is used, which resulted in improving the value of $V_{eCF}$ from 2.8 V to 1.8V. With the suggested process superior device performance and higher yield are achieved.