Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 35D Issue 8
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- Pages.8-14
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- 1998
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- 1226-5845(pISSN)
Performance improvement of high $\beta$ and low saturation voltage power transistor through new process
공정개선을 통한 고전류이득 저포화전압 전력 트랜지서터의 성능향상
Abstract
A new process is developed to improve the electrical characteristics of high .beta. and low saturation voltage power transistor for lamp solenoid driver application. To prevent punch-through breakdown, appropriate combination of base doping and base width is necessary in the range of operating voltage of the circuit. The optimum values of base doping and sheet resistance are
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