• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.10
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• pp.2045-2051
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• 2009

A 5-GHz band Low Noise Amplifier(LNA) using SOI MOSFET is designed. To improve the noise performance, depletion-type SOI MOSFET is adopted, and it is designed by the two-stage topology consisting of common-source and common-gate stages for low-voltage operation. The fabricated LNA achieved an S11 of less than -10dB, voltage gain of 21dB with a power consumption of 8.3mW at 5.5GHz, and a noise figure of 1.7dB indicated that the depletion-type LNA improved the noise figure by 0.3dB compared with conventional type. These results show the feasibility of a CMOS LNA employing depletion-type SOI MOSFET for low-noise application.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.432-440
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• 2023

This study introduces an efficient readout circuit designed for two-electrode electrocardiogram (ECG) recording, characterized by its low-noise and low-power consumption attributes. Unlike its three-electrode counterpart, the two-electrode ECG is susceptible to common-mode interference (CMI), causing signal distortion. To counter this, the proposed circuit integrates a common-mode charge pump (CMCP) with a window comparator, allowing for a CMI tolerance of up to 20 V_PP. The CMCP design prevents the activation of electrostatic discharge (ESD) diodes and becomes operational only when CMI surpasses the predetermined range set by the window comparator. This ensures power efficiency and minimizes intermodulation distortion (IMD) arising from switching noise. To maintain ECG signal accuracy, the circuit employs a chopper-stabilized instrumentation amplifier (IA) for low-noise attributes, and to achieve high input impedance, it incorporates a floating high-pass filter (HPF) and a current-feedback instrumentation amplifier (CFIA). This comprehensive design integrates various components, including a QRS peak detector and serial peripheral interface (SPI), into a single 0.18-㎛ CMOS chip occupying 0.54 mm². Experimental evaluations showed a 0.59 µV_RMS noise level within a 1-100 Hz bandwidth and a power draw of 23.83 µW at 1.8 V.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.10
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• pp.27-33
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• 2016

This paper proposes a Low Noise Amplifier (LNA) with chopper stabilization technique with a sample-hold circuit. Chopper stabilization technique is effective in terms of reducing low frequency offset and flicker noise. Conventional chopper amplifier has a disadvantage in area because of using Low Pass Filter (LPF) for remove chopping spike. The proposed chopper amplifier employed sample and hold technique to decrease chopping spike instead of LPF that improves 36% in voltage damping and 11% in area.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.28-31
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• 2004

This paper describe analysis active microstrip antenna with low noise amplifier at 900 MHz for mobile communication. The microstrip patch antenna is integrated with low noise amplifier on a permittivity 4.5 (Epoxy-FR4) and thickness of substrate 1.6 mm. Low noise amplifier is designed by using GaAs FETs. The analysis characteristics of antenna include return loss, input impedance, vswr, radiation pattarn, bandwidth and gain of antenna. Mesurement gain of antenna is shown 19.2435 dBi.

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.225-228
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• 2004

This paper has been studied about UWB(Ulra wide-band)'s LNA(Low Noise Amplifier) and Mixer. The UWB is a new technology that is being pursed for both commercial and military purposes. Direct conversion architectures that convert RF signals have potential to achieve such terminals, because they eliminate the need for non-programmable image-rejection filters and IF channel filters. And this architecture promises better performance in power, size, and cost than existing heterodyne - based receivers. This Receiver architectures combines low-noise amplifier, mixer. And then this paper has designed suitable UWB's LNA and Mixer.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.2-6
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• 2000

We have developed an extremely sensitive radio frequency amplifier based on the dc superconducting quantum interference device (dc SQUID). Unlike a conventional semiconductor amplifier, a SQUID can be cooled to ultra-low temperatures (100 mK or less) and thus potentially achieve a much lower noise temperature. In a conventional SQUID amplifier, where the integrated input coil is operated as a lumped element, parasitic capacitance between the coil and the SQUID washer limits the frequency up to which a substantial gain can be achieved to a few hundred MHz. This problem can be circumvented by operating the input coil of the SQUID as a microstrip resonator: instead of connecting the input signal open. Such amplifiers have gains of 15 dB or more at frequencies up to 3 GHz. If required, the resonant frequency of the microstrip can be tuned by means of a varactor diode connected across the otherwise open end of the resonator. The noise temperature of microstrip SQUID amplifiers was measured to be between $0.5\;K\;{\pm}\;0.3\;K$ at a frequency of 80 MHz and $1.5\;K\;{\pm}\;1.2\;K$ at 1.7 GHz, when the SQUID was cooled to 4.2 K. An even lower noise temperature can be achieved by cooling the SQUID to about 0.4 K. In this case, a noise temperature of $100\;mK\;{\pm}\;20\;mK$ was achieved at 90 MHz, and of about $120\;{\pm}\;100\;mK$ at 440 MHz.

• Progress in Superconductivity
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• v.2 no.1
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• pp.1-5
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• 2000

We have developed an extremely sensitive radio frequency amplifier based on the dc superconducting quantum interference device (dc SQUID). Unlike a conventional semiconductor amplifier, a SQUID can be cooled to ultra-low temperatures (100 mK or less) and thus potentially achieve a much lower noise temperature. In a conventional SQUID amplifier, where the integrated input coil is operated as a lumped element, parasitic capacitance between the coil and the SQUID washer limits the frequency up to which a substantial gain can be achieved to a few hundred MHz. This problem can be circumvented. by operating the input coil of the SQUID as a microstrip resonator: instead of connecting the input signal between the two ends of the coil, it is connected between the SQUID washer and one end of the coil; the other end is left open. Such amplifiers have gains of 15 dB or more at frequencies up to 3 GHz. If required, the resonant frequency of the microstrip can be tuned by means of a varactor diode connected across the otherwise open end of the resonator. The noise temperature of microstrip SQUID amplifiers was measured to be between 0.5 K $\pm$ 0.3 K at a frequency of 80 MHz and 1.5 K $\pm$: 1.2 K at 1.7 GHz, when the SQUID was cooled to 4.2 K. An even lower noise temperature can be achieved by cooling the SQUID to about 0.4 K. In this case, a noise temperature of 100 mK $\pm$ 20 mK was achieved at 90 MHz, and of about 120 $\pm$ 100 mK at 440 MHz.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1555-1557
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• 2002

We have investigated the precharge type sense amplifier, it is suitable fur voltage sensing in a NOR type single transistor ferroelectric field effect transistor (1T FeFET) memory read operation. The proposed precharge type sense amplifier senses the bit line voltage of 1T FeFET memory. Therefore, the reference celt is not necessary compared to current sensing in 1T FeFET memory, The high noise margin is wider than the low noise margin in the first inverter because requires tile output of precharge type sense amplifier high sensitivity to transition of input signal. The precharge type sense amplifier has very simple structure and can sense the bit line signal of the 1T FeFET memory cell at low voltage.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.4
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• pp.48-53
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• 2001

A three-stage low noise amplifier(LNA) for the Base-station of the IMT-2000 is designed and implemented. In the first stage, a GaAs HJt-FET which has good noise characteristics is made use of. Monolithic microwave integrated circuits(MMICS) are used in the second and the third stage to achieve both the high gain and high output power. Although the balanced amplifier is used to reduce the input VSWR, it is done only in the first stage because we have to minimize the noise figure attributed to the phase difference of the balanced amplifier. It is shown that the implemented LNA has the gai over 39.74dB, the gain flatness less than ±0.4dB, the noise figure below 0.97dB, input and output VSWRs less than 1.2, and OIP₃(output third order intercept point) of 38.17dBm in the operating frequency range.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.8
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• pp.1263-1268
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• 2008

In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.