• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.18-19
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• 2017

This paper shows the design of the high voltage capacitor charger which using a modified series parallel resonant converter. The used silicon carbide Metal-Oxide Semiconductor Field Effect Transistor (SiC MOSFET) is proper for the few hundred kHz of high switching frequency to overcome the bulk resonant inductor and snubber capacitors. Furthermore, to increase the amount of the charging current, three phase delta transformer is used as well as the secondary sides are connected in parallel. In this paper, the design procedure of the high voltage capacitor charger is suggested and the output power is verified by the experimental results with the rated resistor load.

• Journal of Power Electronics
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• 제10권4호
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• pp.419-427
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• 2010

A parallel control strategy in capacity proportion frequency allocation mode for shunt active power filters (APFs) is proposed to overcome some of the difficulties in high power applications. To improve the compensation accuracy and overall system stability, an improved selective harmonic current control based on multiple synchronous rotating reference coordinates is presented in a single APF unit, which approximately implements zero steady-state error compensation. The combined decoupling strategy is proposed and theoretically analyzed to simplify selective harmonic current control. Improved selective harmonic current control forms the basis for multi-APF parallel operation. Therefore, a parallel control strategy is proposed to realize a proper optimization so that the APFs with a larger capacity compensate more harmonic current and the ones with a smaller capacity compensate less harmonic current, which is very practical for accurate harmonic current compensation and stable grid operation in high power applications. This is verified by experimental results. The total harmonic distortion (THD) is reduced from 29% to 2.7% for a typical uncontrolled rectifier load with a resistor and an inductor in a laboratory platform.

• 한국전기전자재료학회논문지
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• 제26권7호
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• pp.515-521
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• 2013

Magnetoelectric(ME) bulk composites with PZT-PNN-PZN/$Fe_2O_4$ were prepared by using a conventional ceramic methods and investigated on the ME voltage vs frequency of ac magnetic fields. We made the electric equivalent circuits by using the Maxwell-Wagner model and simulated the frequency dependence of ME voltage in low frequency region. ME devices were described by a series of two equivalent circuits of piezoelectric and magnetic, which have the relaxation time ${\tau}$ due to the interaction between ME device and load resistor. Equivalent circuit of piezoelectric material is independent of frequency. However ferrite magnetic materials have Debye absorption and dipolar dispersion, whose equivalent circuit is a function of frequency. Therefore we suggest the resistance in the equivalent circuit is proportion to $1+{\omega}^2{\tau}^2$ and the capacitance is in inverse proportion to $1+{\omega}^2{\tau}^2$ in the magnetic materials.

• 한국ITS학회 논문지
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• 제7권4호
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• pp.86-96
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• 2008

본 논문에서는 광대역 평면 모노폴 안테나와 광대역 대역통과 스터브 여파기를 이용하여 2.45 GHz에서 무선전력 전송이 가능한 광대역 렉테나를 설계 및 제작하였다. 기존의 일반적인 평면형 안테나의 크기를 표면전류분포를 이용하여 방사체와 접지면의 크기를 줄일 수 있었고, 광대역 효과를 얻기 위해 확장된 접지면에 2차 고조파가 제거된 스터브 여파기를 사용한 정류회로단을 효율적으로 집적화 시킬 수 있었다. 그 결과 본 논문에서 제안한 렉테나는 부하저항이 270 Ohm에서 80% 의 RF-to-DC Power 최대 변환 효율을 보이며, $1.8{\sim}2.8$ GHz의 넓은 대역에서 RF-to-DC Power 변환효율이 50% 이상을 유지한다.

• Smart Structures and Systems
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• 제7권5호
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• pp.417-432
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• 2011

The present paper is devoted to vibration canceling and shape control of piezoelastic slender beams. Taking into account the presence of electric networks, an extended electromechanically coupled Bernoulli-Euler beam theory for passive piezoelectric composite structures is shortly introduced in the first part of our contribution. The second part of the paper deals with the concept of passive shape control of beams using shaped piezoelectric layers and tuned inductive networks. It is shown that an impedance matching and a shaping condition must be fulfilled in order to perfectly cancel vibrations due to an arbitrary harmonic load for a specific frequency. As a main result of the present paper, the correctness of the theory of passive shape control is demonstrated for a harmonically excited piezoelelastic cantilever by a finite element calculation based on one-dimensional Bernoulli-Euler beam elements, as well as by the commercial finite element code of ANSYS using three-dimensional solid elements. Finally, an outlook for the practical importance of the passive shape control concept is given: It is shown that harmonic vibrations of a beam with properly shaped layers according to the presented passive shape control theory, which are attached to an resistor-inductive circuit (RL-circuit), can be significantly reduced over a large frequency range compared to a beam with uniformly distributed piezoelectric layers.

• 한국전자통신학회논문지
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• 제14권1호
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• pp.81-86
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• 2019

본 논문은 복수개의 스위칭모드 전원장치를 병렬 결선을 통하여 부하에 보다 큰 전력을 공급가능하게 하는 시스템 설계에 관한 것이다. 이를 위해 정전압조정기의 출력단에 션트저항을 직렬로 배치하고 아두이노를 이용하여 출력단 전압을 감지하고 제어하도록 하였다. 본 논문에서는 실험을 위해 두 개의 정전압조정기를 이용하였으나 그 이상의 보드에 대해서도 일반화가 가능할 것이다. 이와 같은 방식으로 제어되는 시스템을 통해 두 개의 시스템이 부하에 전달되는 전류의 합이 각각의 보드에서 나온 전류의 96%가 부하에 전달되는 것을 확인하였다. 효율의 경우 단위 보드에서의 효율은 92.4% 정도가 나왔으며 병렬결선 시에는 90% 정도가 나왔다.

• ETRI Journal
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• 제45권1호
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• pp.163-170
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• 2023

We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.

• ETRI Journal
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• 제46권4호
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• pp.708-715
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• 2024

We propose a 10-GHz 2 × 2 phased-array radio frequency (RF) receiver with an 8-bit linear phase and 15-dB gain control range using 65-nm complementary metal-oxide-semiconductor technology. An 8 × 8 phased-array receiver module is implemented using 16 2 × 2 RF phased-array integrated circuits. The receiver chip has four single-to-differential low-noise amplifier and gain-controlled phase-shifter (GCPS) channels, four channel combiners, and a 50-Ω driver. Using a novel complementary bias technique in a phase-shifting core circuit and an equivalent resistance-controlled resistor-inductor-capacitor load, the GCPS based on vector-sum structure increases the phase resolution with weighting-factor controllability, enabling the vector-sum phase-shifting circuit to require a low current and small area due to its small 1.2-V supply. The 2 × 2 phased-array RF receiver chip has a power gain of 21 dB per channel and a 5.7-dB maximum single-channel noise-figure gain. The chip shows 8-bit phase states with a 2.39° root mean-square (RMS) phase error and a 0.4-dB RMS gain error with a 15-dB gain control range for a 2.5° RMS phase error over the 10 to10.5-GHz band.

• 한국전자파학회논문지
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• 제24권11호
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• pp.1091-1097
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• 2013

이 논문은 $0.11{\mu}m$ RF CMOS 공정에서 비대칭 몸체 바이어싱을 적용한 비교기를 사용한 정류기를 제안한다. 제안하는 정류기는 MOSFET와 두 개의 비교기로 이루어져 있다. 이 비교기는 부하 전압이 입력 전압보다 높을 때 생기는 역방향 누설 전류를 줄이는 데 사용한다. 비대칭 몸체 바이어싱을 사용함으로써 비교기의 High에서 Low 상태로 바꾸는 기준 전압을 높이고, 누설 전류가 흐르는 시간을 줄인다. 13.56 MHz의 2 Vpp 교류전압을 입력하고, $1k{\Omega}$의 저항과 1 nF의 커패시터를 부하에 연결한 환경에서 측정하였다. 시뮬레이션 결과, 전압 변환 효율은 87.5 %, 전력 변환 효율은 45 %이고, 측정한 전압 변환 효율은 85.215 %, 전력 변환 효율은 50 %이다.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.422-426
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• 2011

Piezoelectric materials can be used to convert mechanical energy into electrical energy. In this study, we investigated the possibility of harvesting from mechanical vibration force using a high efficient piezoelectric material-polyvinylidene fluoride (PVDF). A piezoelectric energy harvesting system consists of rectifier, filter capacitor, resistance. The experiments were carried out with impacting force to PVDF film with the thickness of 1 ${\mu}m$. The output power was measured with change in the load resistance value from 100 ${\Omega}$ to 2.2 $M{\Omega}$. The highest power was obtained under optimization by selection of suitable resistive load and capacitance. A power of 0.3082 ${\mu}W/mm^2$ was generated at the external vibration force of 5 N (10 Hz) across a 1 $M{\Omega}$ optimal resistor. Also, the maximum power of 0.345 ${\mu}W/mm^2$ was generated at 22 ${\mu}F$ and 1 $M{\Omega}$. The developed system was expected at a solution to overcome the critical problem of making up small size energy harvester.