• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.8
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• pp.1133-1138
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• 2018

Lightweight Encryption Algorithm (LEA) is one of the most promising lightweight block cipher algorithm due to its high efficiency and security level. There are many works on the efficient LEA implementation. However, many works missed the secure application services where the IoT platforms perform secure communications between heterogeneous IoT platforms. In order to establish the secure communication channel between them, the encryption should be performed in the on-the-fly method. In this paper, we present the LEA implementation performing the on-the-fly method over the ARM Cortex-M3 processors. The general purpose registers are fully utilized to retain the required variables for the key scheduling and encryption operations and the rotation operation is optimized away by using the barrel-shifter technique. Since the on-the-fly method does not store the round keys, the RAM requirements are minimized. The implementation is evaluated over the ARM Cortex-M3 processor and it only requires 34 cycles/byte.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.244-250
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• 2012

This paper describes a 4-Gb/s receiver circuit for a low-swing ground-referenced differential signaling system. The receiver employs a common-gate level-shifter and a continuous linear equalizer which compensates inter-symbol-interference (ISI) and improves voltage and timing margins. A bias circuit maintains the bias current of the level-shifter when the common level of the input signal changes. The receiver is implemented with a low-power 65-nm CMOS technology. When 4-Gb/s 400mVp-p signals are transmitted to the receiver through the channel with the attenuation of -19.7dB, the timing margin based on bit error rate (BER) of $10^{-11}$ is 0.48UI and the power consumption is as low as 0.30mW/Gb/s.

• ETRI Journal
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• v.38 no.3
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• pp.417-424
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• 2016

In this paper, an accurate characterization of a fabricated X-band transmit/receive module is described with the process of generating control data to correct amplitude and phase deviations in an active electronically scanned array antenna unit. In the characterization, quantization errors (from both a digitally controlled attenuator and a phase shifter) are considered using not theoretical values (due to discrete sets of amplitude and phase states) but measured values (of which implementation errors are a part). By using the presented procedure for the characterization, each initial control bit of both the attenuator and the phase shifter is closest to the required value for each array element position. In addition, each compensated control bit for the parasitic cross effect between amplitude and phase control is decided using the same procedure. Reduction of the peak sidelobe level of an array antenna is presented as an example to validate the proposed procedure.

• Journal of information and communication convergence engineering
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• v.6 no.1
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• pp.43-46
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• 2008

This paper proposes an advanced test circuit for detecting the connectivity between a drum ring of laser printer and PCB. The detection circuit of charge sharing is proposed, which minimizes the influences of internal parasitic capacitances. The test circuit is composed of precharge circuit, analog comparator, level shifter. Its functional operation is verified using $0.6{\mu}m$ 3.3V/40V CMOS process parameter by HSPICE. Access time is100ns. Layout of the drum contact test circuit is $465{\mu}m\;{\times}\;117{\mu}m$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.222-225
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• 2006

A custom-made display driver for an electronic paper is presented, which has high-voltage multilevel output capability and extremely low power consumption. An original level-shifter circuit can effectively reduce the power consumption and the chip area. This driver was implemented to a Quick-Response Liquid Powder Display (QR-LPD) and the image quality and power consumption was estimated.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.365-368
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• 2002

WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NMI ion implantation and deposition & etch nitride layer New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.402-403
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• 2009

A variety of power reduction technologies is introduced and the benefits of the technologies are discussed. PenTile$^{(R)}$ DBLC (Dynamic Brightness LED Control) combined with SABC (Sensor-Based Adaptive Brightness Control) enables to achieve the average LED power consumption to one third. The panel power reduction of 25% can be achieved with low power driving technology, ALS (Active Level Shifter). MIP (Memory In Pixel) is expected to be useful in transflective display because the whole display area can be utilized in reflective mode with power consumption of 1mW.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1283-1286
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• 2006

A holding latch with level shifting function is proposed for power and cost effectiveness with low temperature polycrystalline silicon technology on the glass backplane. Layout area and power consumption of the proposed circuit are reduced by 10% and 52% compared with those of the typical structure which combines a static D-latch and a cross coupled level shifter for 2.2" qVGA panel, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.3 s.357
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• pp.6-11
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• 2007

This paper proposes CMOS optical receivers to reduce effective area and pulse width distortion (PWD) in high definition digital audio interfaces. To mitigate effective area and PWD, proposed receivers include a frans-impedance amplifier (TIA) with dual output and a level shifter with threshold convergence, respectively. Proposed circuits are fabricated using $0.25{\mu}m$ CMOS process and measured result demonstrated the effective area of $270\times120{\mu}m^2$ and PWD of ${\pm}3%$ for the receiver with a dual output TIA, and the effective area of $410\times140{\mu}m^2$ and PWD of ${\pm}2%$ for the receiver with a threshold convergence level shifter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.58-65
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• 2009

In this paper, we designed high voltage gate drive IC including dead time circuit in which capacitors controlled rising time and falling time, and schimitt-triggers controlled switching voltage. Designed High voltage gate drive IC improves an efficiency of half-bridge converter by decreasing dead time variation against temperature and has variable dead time by the capacitor value. and its power dissipation, which is generated on high side part level shifter, has decreased 52 percent by short pulse generation circuit, and UVLO circuit is designed to prevent false-operation. We simulated by using Spectre of Cadence to verify the proposed circuit and fabricated in a 1.0um process.