• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.629-632
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• 2008

Printed organic thin-film transistors (OTFTs) were used in the fabrication of a screen- printed gate, source and drain electrodes on flexible plastic substrates using silver pastes, a coated polyvinylphenol dielectrics, and jetted bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) organic semiconductor. The OTFTs printed using screen printing and soluble processes made it was possible to fabricate a printed OTFT with a channel length as small as $13\;{\mu}m$ on plastic substrates; this was not possible using previous traditional printing techniques.

• ETRI Journal
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• 제24권5호
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• pp.405-408
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• 2002

In this paper, we discuss recovery schemes for errors occurring when image data encoded with variable length coding (VLC) is transmitted through additive white Gaussian noise (AWGN) and multiple-access interference in direct sequence code division multiple access (DS/CDMA) systems. VLC such as JPEG is so sensitive to channel errors that severe degradation in decoded images occurs even if only one or two bits have errors. This is due to the loss of synchronization at the image decoder. We propose a resynchronization scheme using a power allocation method in wireless DS/CDMA transmission. Through simulation, we know that the proposed method has a more robust resynchronization capability and higher objective and subjective quality than the conventional method.

• 전자공학회논문지A
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• 제32A권12호
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• pp.136-141
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• 1995

GaAs power MESFETs with 1 .mu.m gate length and an undoped GaAs surface layer on the doped GaAs channel are fabricated using IR(image reversal) and air-birdge processes. And then We have measured and calculated DC and RF characteristics. We have obtained saturation current 107-500 mA (197-255 mA/mm), maximum linear RF output power 111-518.8 mW (204-270 mW/mm), current gain cut-off frequency 7-10 GHz, maximum unilateral transducer power gain 5.7-12.7, and power added efficiencies 37.9-41.2 % from the devices with gate width 0.45-2.2 mm, at 6 GHz.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2007년도 하계종합학술대회 논문집
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• pp.433-434
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• 2007

This paper describes a low-voltage dynamic random-access memory (DRAM) focusing on subthreshold leakage reduction during self-refresh (sleep) mode. By sharing a power switch, multiple iterative circuits such as row and column decoders have a significantly reduced subthreshold leakage current. To reduce the leakage current of complex logic gates, dual channel length scheme and input vector control method are used. Because all node voltages during the standby mode are deterministic, zigzag super-cutoff CMOS is used, allowing to Preserve internal data. MTCMOS technique Is also used in the circuits having no need to preserve internal data. Sub-1.2-V 1-Gb mobile DDR DRAM employing all these low-power techniques was designed in a 60 nm CMOS technology and achieved over 77% reduction of overall leakage current during the self-refresh mode.

• 대한전자공학회논문지SD
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• 제45권9호
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• pp.8-13
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• 2008

균일하게 도핑된 반도체에서, 분포된 확산 잡음원에 의해서 발생하는 단자잡음전류의 전력주파수밀도를 계산하였다. 고정된 전압에서 반도체의 길이가 작아짐에 따라, 또는 주어진 반도체에서 전류레벨이 증가함에 따라, AC 단락잡음전류는 열잡음 뿐만 아니라 과잉잡음을 보인다. 이 과잉잡음은 채널길이가 외인성 Debye 길이에 비해 매우 작은 경우에는 산탄잡음의 스펙트럼과 같은 모습을 보인다. 유한한 주파수에서 속도요동 잡음원에 의한 외인성 반도체에서 발생하는 과잉잡음을 최초로 유도하였다. 유도된 과잉잡음 공식은 반도체 채널의 통과 시간, 유전 이완 시간, 속도 이완 사이의 상호 작용에 따라 단자잡음 전류와 캐리어 농도 요동이 결정됨을 명시적으로 보여준다. 또한 유도된 해석적 식을 사용하여 여러 가지 반도체 샘플 길이와 바이어스, 주파수에 따른 잡음 스펙트럼의 변화도를 계산하였다. 유도된 공식은 quasi-ballistic 수송현상이 중요한 역할을 하는 나노스케일 MOSFET의 잡음 발생 기제를 이해할 수 있는 기반이 된다.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• 한국전자파학회논문지
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• 제15권5호
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• pp.517-524
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• 2004

광 위상 공액기(OPC: Optical Phase Conjugator)가 전체 전송 거리의 중간이 아닌 곳에 위치한 8-채널 WDM 시스템에서 두 전송 구간의 총 분산량 변동에 따른 각 채널의 보상 특성을 NRZ 형식과 RZ 형식별로 살펴보았다. 신호파를 공액파로 만드는 OPC의 비선형 매질로는 광대역 특성을 나타낼 수 있는 HNL-DSF(Highly- Non-linear Dispersion Shifted Fiber)를 사용했다. 우선 OPC를 중심으로 두 전송 구간의 총 분산량이 서로 동일하지 않은 WDM 전송 시스템에서는 전송 파형 형식으로 NRZ보다 RZ를 사용한 경우가 안정된 품질 유지에 더욱 유리하다는 것을 확인하였다. 또한 NRZ 파형 전송의 경우 OPC를 중심으로 두 전송 구간의 총 분산량을 동일하게 설정하는 것보다 상대적으로 길이가 짧은 전송 구간의 총 분산량을 길이가 긴 전송 구간의 총 분산량에 비해 작게 설정하여야 양호한 보상이 이루어지는 것을 확인하였다.

• Journal of the Optical Society of Korea
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• 제12권1호
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• pp.31-37
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• 2008

To increase output power of a He-Ne laser we propose to use the capacitive rf discharge and implement four channel structure. Most of experiments were carried out with a single laser tube from this structure to optimize the output mirror transmission, pressure and composition of the mixture. A laser tube of 2.8 mm inner diameter and 50 cm discharge length can give an output power of above 5.5 mW at 3.39 ${\mu}m$. Four such tubes in "matrix" structure let us obtain 20 mW of output. Simplified models which can be used to evaluate the behavior of an equivalent electrical circuit with laser plasma and qualitative characteristics of output power of He-Ne laser were also described.

• ETRI Journal
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• 제37권1호
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• pp.43-53
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• 2015

In this paper, a selective coefficient updating (SCU) approach at each branch of the per-tone equalization (PTEQ) structure has been applied for insufficient cyclic prefix (CP) length. Because of the high number of adaptive filters and their complex adaption process in the PTEQ structure, SCU has been proposed. Using this method leads to a reduction in the computational complexity, while the performance remains almost unchanged. Moreover, the use of set-membership filtering with variable step size is proposed for a sufficient CP case to increase convergence speed and decrease the average number of calculations. Simulation results show that despite the aforementioned algorithms having similar performance in comparison with conventional algorithms, they are able to reduce the number of calculations necessary. In addition, compensation of both the channel effect and the transmitter/receiver in-phase/quadrature-phase imbalances are achievable by these algorithms.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1515-1517
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• 2001

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.