• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.629-632
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• 2008

Printed organic thin-film transistors (OTFTs) were used in the fabrication of a screen- printed gate, source and drain electrodes on flexible plastic substrates using silver pastes, a coated polyvinylphenol dielectrics, and jetted bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) organic semiconductor. The OTFTs printed using screen printing and soluble processes made it was possible to fabricate a printed OTFT with a channel length as small as $13\;{\mu}m$ on plastic substrates; this was not possible using previous traditional printing techniques.

• ETRI Journal
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• v.24 no.5
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• pp.405-408
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• 2002

In this paper, we discuss recovery schemes for errors occurring when image data encoded with variable length coding (VLC) is transmitted through additive white Gaussian noise (AWGN) and multiple-access interference in direct sequence code division multiple access (DS/CDMA) systems. VLC such as JPEG is so sensitive to channel errors that severe degradation in decoded images occurs even if only one or two bits have errors. This is due to the loss of synchronization at the image decoder. We propose a resynchronization scheme using a power allocation method in wireless DS/CDMA transmission. Through simulation, we know that the proposed method has a more robust resynchronization capability and higher objective and subjective quality than the conventional method.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.136-141
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• 1995

GaAs power MESFETs with 1 .mu.m gate length and an undoped GaAs surface layer on the doped GaAs channel are fabricated using IR(image reversal) and air-birdge processes. And then We have measured and calculated DC and RF characteristics. We have obtained saturation current 107-500 mA (197-255 mA/mm), maximum linear RF output power 111-518.8 mW (204-270 mW/mm), current gain cut-off frequency 7-10 GHz, maximum unilateral transducer power gain 5.7-12.7, and power added efficiencies 37.9-41.2 % from the devices with gate width 0.45-2.2 mm, at 6 GHz.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.433-434
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• 2007

This paper describes a low-voltage dynamic random-access memory (DRAM) focusing on subthreshold leakage reduction during self-refresh (sleep) mode. By sharing a power switch, multiple iterative circuits such as row and column decoders have a significantly reduced subthreshold leakage current. To reduce the leakage current of complex logic gates, dual channel length scheme and input vector control method are used. Because all node voltages during the standby mode are deterministic, zigzag super-cutoff CMOS is used, allowing to Preserve internal data. MTCMOS technique Is also used in the circuits having no need to preserve internal data. Sub-1.2-V 1-Gb mobile DDR DRAM employing all these low-power techniques was designed in a 60 nm CMOS technology and achieved over 77% reduction of overall leakage current during the self-refresh mode.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.8-13
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• 2008

Noise in homogeneous extrinsic semiconductor samples is calculated due to distributed diffusion noise sources. As the length of the device shrinks at a fixed bias voltage, the ac-wise short-circuit noise current shows excess noise as well as thermal noise spectra. This excess noise behaves like a full shot noise when the channel length becomes very small compared with the extrinsic Debye length. For the first time, the analytic formula of the excess noise in extrinsic semiconductors from velocity-fluctuation noise sources is given for finite frequencies. This formula shows the interplay between transit time, dielectric relaxation time, and velocity relaxation time in determining the terminal noise current as well as the carrier density fluctuation. As frequency increases, the power spectral density of the excess noise rolls off. This formula sheds light on noise in nanoscale MOSFETs where quasi-ballistic transport plays an important role in carrier transport and noise.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.5
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• pp.517-524
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• 2004

In this paper, we investigated the compensation characteristics of distorted NRZ format and RZ format signal dependence on dispersion variation of each transmission section in 8-channel WDM system. The WDM system have two transmission sections of unequal length with respect to optical phase conjugator(OPC) position. We select highly-nonlinear dispersion shifted fiber(HNL-DSF) as a nonlinear medium of OPC in order to convert wideband signal waves to conjugated waves. First, we confirmed that RZ is better than NRZ as a modulation format for maintenance or stable performance, when total dispersion or both sections in WDM system is different each other. Also, we confirmed that total dispersion of the short length section must be smaller than that of the long length section in order to excellently compensate for NRZ format signal.

• Journal of the Optical Society of Korea
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• v.12 no.1
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• pp.31-37
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• 2008

To increase output power of a He-Ne laser we propose to use the capacitive rf discharge and implement four channel structure. Most of experiments were carried out with a single laser tube from this structure to optimize the output mirror transmission, pressure and composition of the mixture. A laser tube of 2.8 mm inner diameter and 50 cm discharge length can give an output power of above 5.5 mW at 3.39 ${\mu}m$. Four such tubes in "matrix" structure let us obtain 20 mW of output. Simplified models which can be used to evaluate the behavior of an equivalent electrical circuit with laser plasma and qualitative characteristics of output power of He-Ne laser were also described.

• ETRI Journal
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• v.37 no.1
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• pp.43-53
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• 2015

In this paper, a selective coefficient updating (SCU) approach at each branch of the per-tone equalization (PTEQ) structure has been applied for insufficient cyclic prefix (CP) length. Because of the high number of adaptive filters and their complex adaption process in the PTEQ structure, SCU has been proposed. Using this method leads to a reduction in the computational complexity, while the performance remains almost unchanged. Moreover, the use of set-membership filtering with variable step size is proposed for a sufficient CP case to increase convergence speed and decrease the average number of calculations. Simulation results show that despite the aforementioned algorithms having similar performance in comparison with conventional algorithms, they are able to reduce the number of calculations necessary. In addition, compensation of both the channel effect and the transmitter/receiver in-phase/quadrature-phase imbalances are achievable by these algorithms.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1515-1517
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• 2001

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.