• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.186-188
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• 2001

In this study, the correlation between leakage currents and temperature rise was investigated for the more accurate diagnosis of bad insulator by use of the infrared camera. For the purpose, leakage currents and thermal images were measured for the artificially aged insulators using salt fog. From the results, it is concluded as follows ; in case of artificially aged insulators, the leakage. current was decreased with the duration of voltage application and was largely affected by humidity, which seems due to ionic conduction. Also, the correlation between temperature rise and leakage current was appeared to be quite linear, although it showed below linearity at large leakage current.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 전력전자학술대회 논문집
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• pp.221-224
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• 1998

A PWM inverter with an induction motor often has a problem with a high-frequency leakage current that flows through the distributed electrostatic capacitance from the motor windings to ground. This paper presents an equivalent circuit for high-frequency leakage currents in PWM inverter feeding an induction motor, which forms an LCR series resonant circuit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.55-56
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in the case of illumination from various lightsources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from spectral analysis of light sources.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.918-923
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• 1998

Poly-silicon thin film transistors were fabricated on quartz substrates by high temperature processes. Electrical characteristics were measured and compared for 3 transistor structures of Standard Inverted Gate(SIG), Lightly Doped Drain(LDD), and Dual Gate(DG). Leakage currents of DG and LDD TFT's were smaller that od SIG transistor, while ON-current of LDD transistor is much smaller than that of SIG and DG transistors. Temperature dependence of the leakage currents showed that SIG and DG TFT's had thermal generation current at small drian bias and Frenkel-Poole emission current at hight gate and drain biases, respectively. In case of LDD transistor, thermal generation was the dominant mechanism of leakage current at all bias conditions. It was found that the leakage current was closely related to the reduction of the electric field in the drain depletion region.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.844-847
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권1호
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• pp.23-29
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• 2005

This paper presents the characteristics of leakage currents flowing through ZinC Oxide(ZnO) surge arrester blocks under mixed direct and 60 Hz alternating voltages. A mixed voltage, in which an alternating voltage is superimposed upon a direct voltage, appears on the HVDC system network. The mixed direct and alternating voltage generator with a peak open-circuit of 10 kV was designed and fabricated. The leakage currents and V-I curves for the fine and used ZnO surge arrester blocks were measured as a function of the voltage ratio k, where the voltage ratio k is defined as the ratio of the peak of alternating voltage to the peak of the mixed voltages. The resistive component in the leakage current in the low conduction region is significantly increased with increasing the voltage ratio k. The V-I characteristic curves for the mixed voltages lies between the direct and alternating characteristics, and the cross-over phenomenon in the high conduction region was appeared.

• 전기학회논문지
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• 제65권2호
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• pp.319-328
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• 2016

This paper proposes a simplified SVPWM for three level inverters in transformerless photovoltaic (PV) systems. With the proposed SVPWM the three level space vector (SV) diagram is divided into only six sectors as in conventional two level SV diagram in such a way that only seven SVs are used among all the available SVs of three level inverter. The main features of the proposed SVPWM are that it is simple to implement, less switching losses as compared to conventional SVPWM and most importantly it eliminates the leakage currents in transformerless PV systems. Detailed theoretical analysis of the proposed SVPWM are presented and verified by numerical simulations and experimental results.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.572-576
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• 2004

Various devices for diagnosing arrester soundness are suggested, and most of them simply measure magnitude of leakage current. However, such kind of devices do not provide detailed information needed for the diagnosis. In this study, we designed and fabricated a new arrester analyzer by means of measuring the magnitude, the phase vs. wave height and the harmonics of total leakage currents. The analyzer is composed of a current detector, an optical linker, and a main device operated by a microprocessor. The main device is connected with leakage current detector optically not to be influenced by electromagnetic interference. The analyzer developed measures only total leakage currents, but analyzes most parameters needed for the arrester diagnostics.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권7호
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• pp.364-369
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• 2004

In this Paper, a flashover prediction method using the leakage current in the contaminated EPDM distribution polymer insulator is proposed. The leakage currents on the insulator were measured simultaneously with the different salt fog application such as 25g, 50g, and 75g per liter of deionized water. Then, the measured leakage currents were enveloped and transformed as the CDFS using the Hilbert transform and the level crossing rate, respectively. The obtained CDFS having different gradients(angles) were used as a important factor for the flashover prediction of the contaminated polymer insulator. Thus, the average angle change with an identical salt fog concentration was within a range of 20 degrees, and the average angle change among the different salt fog concentrations was 5 degrees. However, it is hard to be distinguished each other because the gradient differences among the CDFS were very small. So, the new weighting value was defined and used to solve this problem. Through simulation, it Is verified that the proposed method has the capability of the flashover prediction.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1572-1573
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• 2006

This paper presents electrical properties of Zinc Oxide(ZnO) surge arrester blocks under the power frequency AC voltages and various temperatures. The leakage current, $I_{R}-V$ curios and power dissipation for the fine and aged ZnO surge arrester blocks were measured as a function of the temperatures and applied voltages. When the temperature is increased from $50\;[^{\circ}C]$ to $150\;[^{\circ}C]$, the total leakage current significantly increased at the sane applied voltage level. Also, the resistive leakage currents and power dissipation were increased with increasing temperature. The leakage current and power dissipation of the aged ZnO arrester blocks were higher than the fine ZnO arrester blocks.