• 지구물리와물리탐사
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• 제12권3호
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• pp.239-245
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• 2009

저수지 제체 누수구간에 대한 지수를 목적으로 분말도가 서로 다른 콜로이드 시멘트와 보통 포틀랜드 시멘트 그라우트를 이용한 그라우팅을 수행하였으며, 주입 효과 검증을 위하여 그라우팅 전후에 변수위 투수시험과 지표 및 시추공을 이용한 전기비저항 탐사를 실시하였다. 투수시험 결과 그라우팅 이후에 투수계수가 약 10배 이상 낮아지는데, 이는 그라우트 재질에 상관없이 주된 누수구간이 효과적으로 지수됨에 따른 결과로 판단된다. 쌍극자배열 전기비저항 탐사 결과 그라우팅 이후 주입 구간 전체에서 저비저항대가 수평적으로 발달되는 결과가 나타나며, 전기비저항 수직탐사를 이용한 모니터링 결과 그라우트 주입구간에서 겉보기 비저항이 주입 이전에 비해 낮아지는 것으로 나타났다. 또한 검사공을 이용한 전기비저항 토모그래피 탐사 결과 제체 상부에서 수행한 전기비저항 수직탐사 결과와 일치되는 것으로 해석되었다. 따라서, 향후 검사공을 이용한 그라우팅 효과 판정 시 지표 및 시추공을 이용한 전기비저항 탐사 방법을 병행하는 경우 제체의 그라우팅 효과에 대한 공간적인 검증이 가능함을 확인하였다.

• 유공압시스템학회논문집
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• 제7권1호
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• pp.1-5
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• 2010

This paper presents the experimental results of the radial piston type oil pump with new mechanism for a metal diaphragm hydrogen compressor. Generally, metal diaphragm type hydrogen compressor systems are operated by oil hydraulic power. In this system an oil compensating pump has been demanded to compensate for a leakage oil head chamber. The metal diaphragm type hydrogen compressor consists of an oil compensating pump, commonly used hydraulic piston pump and driven by main crank shaft. The radial piston type oil compensating pump with new rolling contacted piston mechanism is developed and experimented. The developed piston element of the radial piston pump consists of piston, steel ball, return spring, two check valves, eccentric cam and ball racer. In this study, designed 4 type pistons as and orifice hole. Operating characteristics and pressure ripple characteristics are tested under no load to 60bar loaded with every 20bar increasing step and pressure ripple and flow rate are experimentally investigated.

• Journal of Mechanical Science and Technology
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• 제17권1호
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• pp.146-156
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• 2003

A numerical algorithm is developed to analyze the performance of a Unit-injector (UI) System for a diesel engine. The fundamental theory of the algorithm is based on the continuity equation of fluid dynamics. The loss factors that should be seriously regarded on the continuity equation are the compressibility effect of liquid fuel, the wall friction loss in high-pressure fuel lines of the system, the kinetic energy loss of fuel in the system, and the leakage of fuel out of the control volume. For an evaluation of the developed simulation algorithm, the calculation results are compared with the experimental outputs provided by the Technical Research Center of Doowon Precision Industry Co. (DPICO) ； the maximum pressure in the plunger chamber (P$\_$p/) and total amount of fuel injected into a cylinder per cycle (Q$\_$f/) at each operational condition. The result shows that the average error rate (%) of P$\_$p/ and Q$\_$f/ are 2.90% and 4.87%, respectively, in the specified operational conditions. Hence, it can be concluded that the analytical simulation algorithm developed in this study can be reasonably applied to the performance prediction of newly designed UI system.

• Tribology and Lubricants
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• 제29권3호
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• pp.180-185
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• 2013

The purpose of this study was to analyze the tribological characteristics of the Electronic control suspension System in a car. In the first example, the cilp used to attach the front electronic control suspension(ECS) system's control actuator was fastened very tightly. Thus, the wire was cut because of continual rotation of the shock-up shover piston rod used to adjust the height of the car. This verified the disconnection phenomenon where wire damaged makes it impossible for the ECS system to send signal to the actuator. The second example, involved a minute hole that allowed gas to leak from the ECS system. As a result, the height of the car verified the down phenomenon. In the third example, the resistance of a wire measured at $0.21{\Omega}$, when the G sensor was disconnected from the system. This verified the system shutdown and lighting of the ECS warning lamp because of body interference caused by a slight pressure on the battery cover. Therefore, quality control is always necessary to ensure safety and durability of a car.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.55.1-55.1
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• 2011

Dye-sensitized solar cell(DSSC) have been considered one of the promising alternatives to conventional solar cells, because of their low cost, easy fabrication and relatively high energy conversion efficiency. However, although the cell offers reasonable efficiency at least 11%, the use of a liquid electrolyte placed technological challenges for achieving the desired durability and operational stability of the cell. In order to prevent or reduce electrolyte leakage considerable efforts have been made, such as p-type semiconductor or organic hole-transport material that better mechanical properties and simple fabrication processes. In this work, we synthesized solid-state electrolyte containing LiI and KI metal salt with starting materials of poly ethylene oxide to substitute liquid electrolyte enhance the ionic conductivity and solar conversion efficiency. Li+ leads to faster diffusion and higher efficiency and K+ leading to higher ionic conductivity. The efficiency of poly ethylene oxide/LiI system electrolyte is 1.47% and poly ethylene oxide/potassium electrolyte is 1.21%. An efficiency of 3.24% is achieved using solid-state electrolyte containing LiI and KI concentrations. The increased solar conversion efficiency is attributed to decreased crystallinity in the polymer that leads to enhanced charge transfer.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.825-831
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• 2006

As an increase of chip complexity and level of chip integration, chip input/output (I/O) pad pitches are also drastically reduced. With arrival of high complexity SoC (System on Chip) and SiP (System in Package) products, conventional horizontal type probe card showed its limitation on probing density for wafer level test. To enhance probing density, we proposed new vertical type probe card that has the $70{\mu}m$ probe needle with tungsten wire in $80{\mu}m$ micro-drilled hole in ceramic board. To minimize alignment error, micro-drilling conditions are optimized and epoxy-hardening conditions are also optimized to minimize planarity changes. To apply wafer level test for target devices (T5365 256M SDRAM), designed probe card was characterized by probe needle tension for test, contact resistance measurement, leakage current measurement and the planarity test. Compare to conventional probe card with minimum pitch of $50{\sim}125{\mu}m\;and\;2\;{\Omega}$ of average contact resistance, designed probe card showed only $22{\mu}$ of minimum pitch and $1.5{\Omega}$ of average contact resistance. And also, with the nature of vertical probing style, it showed comparably small contact scratch and it can be applied to bumping type chip test.

• 한국컴퓨터정보학회:학술대회논문집
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• 한국컴퓨터정보학회 2018년도 제58차 하계학술대회논문집 26권2호
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• pp.29-30
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• 2018

전 세계적으로 급증하고 있는 에너지 수요로 인해 오일, 가스 등의 에너지 생산 매체를 운송 할 수 있는 수송 수단인 배관에 대한 수요도 증가하고 있는 추세이다. 그러나 이러한 배관을 장시간 사용할 경우 노후화로 인해 발생되는 파공은 배관에 흐르는 유체 누설의 원인이 되고, 나아가서 경제 및 재난 피해를 야기할 수 있다. 따라서 다양한 배관 누설 검출 기술들이 개발되고 있는 추세이며, 이를 위해서는 신뢰성 있는 결함 모사 데이터의 확보가 매우 중요하다. 본 논문에서는 신뢰성 있는 데이터 수집을 위해 배관의 누설 상황을 모사 할 수 있는 테스트베드를 제어하고, 테스트베드에서 데이터를 안정적으로 취득할 수 있는 테스트베드 제어 및 데이터 취득 시스템을 제안한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 전기설비
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• pp.55-57
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• 2005

Along with the development of the industrial society, as the transportation of water which is the indirect capital of society and petroleum, gas, etc used as energy sources is rapidly increased. the underground material is being expanded. Like this, the pipes laid under the ground not only bring the corrosion to the land circumstances to reduce the life of the pipes, but also raise the social problem of leakage accidents and the economic loss by Pin Hole. By reason of this, for the purpose of protecting the corrosion of the underground material, we are constructing and operating the electrolytic protection facilities. In case of a region of which specific resistance is high, however, we are not keeping proper protection potential(that is -850mV) to get protection effects. In this study, for the water pipes that under-voltage phenomena occur in the protection potential, we made a spot survey on the under-voltage section and normal-voltage section, compared, analyzed each of the contents and examined the under-voltage causes of the protection potential.

• ETRI Journal
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• 제27권4호
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• pp.439-445
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• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.