• 한국정보통신학회논문지
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• 제20권10호
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• pp.1927-1934
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• 2016

본 논문에서는 일반적인 실리콘 기반 n-MOSFET(n-type Metal Oxide Semiconductor Field Effect Transistor)의 절연 산화막 계면에서 방사선으로부터 유발되는 누설전류 경로를 차단하기 위하여 I형 게이트 n-MOSEFT 구조를 제안하였다. I형 게이트 n-MOSFET 구조는 상용 0.18um CMOS(Complementary Metal Oxide Semiconductor) 공정에서 레이아웃 변형 기법을 이용하여 설계되었으며, ELT(Enclosed Layout Transistor)와 DGA(Dummy Gate-Assisted) n-MOSFET와 같은 레이아웃 변형 기법을 사용한 기존 내방사선 전자소자의 구조적 단점을 개선하였다. 따라서, 기존 구조와 비교하여 반도체 칩 제작에서 회로 설계의 확장성을 확보할 수 있다. 또한, 내방사선 특성 검증을 위하여 TCAD 3D(Technology Computer Aided Design 3-dimension) tool을 사용하여 모델링과 모의실험을 수행하였고, 그 결과 I형 게이트 n-MOSFET 구조의 내방사선 특성을 확인하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.581-582
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• 2006

In this paper, we investigate three different types of multi-fingered layout nMOSFET devices with varying $W_f$(unit finger width) and $N_f$(number of finger). Using layout modification, we improve $f_T$(current gain cutoff frequency) value of 15GHz without scaling down, and moreover, we decrease $NF_{min}$(minimum noise figure) by 0.23dB at 5GHz. The RF noise can be reduced by increasing $f_T$, choosing proper finger width, and reducing the gate resistance. For the same total gate width using multi-fingered layout, the increase of finger width shows high $f_T$ due to the reduced parasitic capacitance. However, this does not result in low $NF_{min}$ since the gate resistance generating high thermal noise becomes larger under wider finger width. We can obtain good RF characteristics for MOSFETs by using a layout optimization technique.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.522-529
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• 2013

In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) technology are presented. Two methods are proposed to suppress subthreshold hump effect using a simple layout modification approach. First, the uniform gate oxide method is based on the concept of an H-shaped gate layout design. Second, the gate work function control method is accomplished by local ion implantation. For our experiments, $0.18{\mu}m$ 20 V class HV CMOS technology is applied for HV MOSFETs fabrication. From the measurements, both proposed methods are very effective for elimination of the inverse narrow width effect (INWE) as well as the subthreshold hump.

• Journal of Electrical Engineering and Technology
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• 제12권4호
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• pp.1619-1626
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• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문초록집
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• pp.361.2-361
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• 2002

Substructures position is considered as design parameter to obtain optimal structural changes to raise its dynamic characteristics. In conventional SDM (structural dynamics modification) method, the layout of modifying substructures position is first fixed and at that condition the structural optimization is performed by using the substructures size and/or material property as design parameters. But in this paper as a design variable substructures global translational and rotational position is treated. (omitted)

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.102-106
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• 2005

A low dark current CMOS image sensor (CIS) pixel without any process modification is developed. Dark current is mainly generated at the interface region of shallow trench isolation (STI) structure. Proposed pixel reduces the dark current effectively by separating the STI region from the photodiode junction using simple layout modification. Test sensor array that has both proposed and conventional pixels is fabricated using 0.18 m CMOS process and the characteristics of the sensor are measured. The result shows that the dark current of the proposed pixel is 0.93fA/pixel that is two times lower than the conventional design.

• 방사성폐기물학회지
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• 제3권4호
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• pp.349-358
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• 2005

본 연구에서는 고준위 방사성폐기물 심지층 처분시설의 규모 및 layout설정에 필요한 요소인 처분터널 및 처분공 간격에 대한 분석을 수행하였다. 이를 위하여, 기준 처분개념과 공학적 방벽 개념을 바탕으로 다양한 조건의 처분터널 및 처분공 단면을 설정하고, 단층 배치 및 복층 배치 개념 에 따른 처분동굴의 구조적, 열적 안정성을 분석하였다. 분석 결과를 바탕으로 설계에 있어서 주요한 고려인자 중의 하나인 굴착량을 감소시킬 수 있는 처분동굴 및 처분공 간격을 제안하였다. 본 연구의 결과는 심지층 처분시설 설계시 활용될 것이며, 향후, 부지에 대한 불확실성을 줄이기 위하여 정확한 부지특성 자료를 통한 상세한 분석이 필요하다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제13권4호
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• pp.1765-1794
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• 2019

Genetic Programming (GP) is an intelligence technique whereby computer programs are encoded as a set of genes which are evolved utilizing a Genetic Algorithm (GA). In other words, the GP employs novel optimization techniques to modify computer programs; imitating the way humans develop programs by progressively re-writing them for solving problems automatically. Trial programs are frequently altered in the search for obtaining superior solutions due to the base is GA. These are evolutionary search techniques inspired by biological evolution such as mutation, reproduction, natural selection, recombination, and survival of the fittest. The power of GAs is being represented by an advancing range of applications; vector processing, quantum computing, VLSI circuit layout, and so on. But one of the most significant uses of GAs is the automatic generation of programs. Technically, the GP solves problems automatically without having to tell the computer specifically how to process it. To meet this requirement, the GP utilizes GAs to a "population" of trial programs, traditionally encoded in memory as tree-structures. Trial programs are estimated using a "fitness function" and the suited solutions picked for re-evaluation and modification such that this sequence is replicated until a "correct" program is generated. GP has represented its power by modifying a simple program for categorizing news stories, executing optical character recognition, medical signal filters, and for target identification, etc. This paper reviews existing literature regarding the GPs and their applications in different scientific fields and aims to provide an easy understanding of various types of GPs for beginners.

• 한국지리정보학회지
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• 제14권2호
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• pp.128-137
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• 2011

본 산림항공사진 영상판독시스템 개발은 기존의 아날로그 방식의 제작과정을 개선하기 위해 제작 기반 기술 및 작업공정을 최적화하여 임상도 제작의 정확성과 효율성을 높이는데 그 목적이 있다. 이를 위해 시스템 구축에 필요한 수치임상도, 항공사진, 수치지형도 등의 DB 모델을 설계하고 검색 엔진, 화면제어, 입체 판독 모드 전환, 편집 도구, 출력 레이아웃 자동 설정 등의 기능과 연동될 수 있도록 인터페이스를 간결하게 구성하였다. 이를 바탕으로 표준화된 방법론을 제시함으로서 각종 수치주제도를 제작하는데 응용 및 확장할 수 있으며, 의사 결정 활용 및 신속한 산림자원정보를 전달할 수 있을 것으로 기대된다.