JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well

  • Han, Sang-Wook (Dept. EECS, Korea Advanced Institute of Science and Technology) ;
  • Kim, Seong-Jin (Dept. EECS, Korea Advanced Institute of Science and Technology) ;
  • Yoon, Eui-Sik (Dept. EECS, Korea Advanced Institute of Science and Technology)
  • Published : 2005.06.30
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Abstract

A low dark current CMOS image sensor (CIS) pixel without any process modification is developed. Dark current is mainly generated at the interface region of shallow trench isolation (STI) structure. Proposed pixel reduces the dark current effectively by separating the STI region from the photodiode junction using simple layout modification. Test sensor array that has both proposed and conventional pixels is fabricated using 0.18 m CMOS process and the characteristics of the sensor are measured. The result shows that the dark current of the proposed pixel is 0.93fA/pixel that is two times lower than the conventional design.

Keywords

References

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