• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.12
• /
• pp.2899-2904
• /
• 2015

This paper introduces about the effect on $I_{DS}-V_{GS}$ characteristic of transistor that interface trap charge is created by damage due to heat in a 3D sequential inverter. A interface trap charge distribution in oxide layer in a 3D sequential inverter is extracted using two-dimensional device simulator. The variation of threshold voltage of top transistor according to the gate voltage variation of bottom transistor is also described in terms of Inter Layer Dielectric (ILD) length of 3D sequential inverter, considering the extracted interface trap charge distribution. The extracted interface trap density distribution shows that the bottom $HfO_2$ layer and both the bottom and top $SiO_2$ layer were relatively more affected by heat than the top $HfO_2$ layer with latest process. The threshold voltage variations of the shorter length of ILD in 3D sequential inverter under 50nm is higher than those over 50nm. The $V_{th}$ variation considering the interface trap charge distribution changes less than that excluding it.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.4
• /
• pp.210-214
• /
• 2014

We investigated emission characteristics of tandem organic light emitting devices (OLEDs) with p-type materials as charge generation layer. The tandem OLEDs were fabricated by using $MoO_x$, $WO_x$, C60 and HATCN as p-type material or not using p-type material for charge generation. When HATCN was used as p-type material, it showed high current density at low applied voltage, but increase of efficiency was small because of charge unbalance in emitting layer. In case of tandem OLED not using p-type material, applied voltage increased remarkably because of difficulty of hole injection. In case of $MoO_x$, $WO_x$ or C60 as p-type material, current emission efficiency increased greatly. In particular, current emission efficiency of tandem OLED using $MoO_x$ as p-type material increased up to 3 times than current emission efficiency of single OLED. The Commission Internationale de l'Eclairage (CIE) 1931 color coordinates were changed by overlapping of 504 nm emission wavelength. As a result, emission efficiency of tandem OLED improved compared with single OLED, but driving voltage also increased by increase of organic layer thickness.

• Proceedings of the Korea Society of Information Technology Applications Conference
• /
• 2005.11a
• /
• pp.237-241
• /
• 2005

We present a device model for organic light emitting diodes(OLEDs) which includes charge injection, transport, recombination, and space charge effects in the organic materials. The model can describe both injection limited and space charge limited current flow and the transition between them. Calculated device current, light output, and quantum and power efficiency are presented for different cases of material and device parameters and demonstrate the improvements in device performance in bilayer devices. These results are interpreted using the calculated spatial variation of the electric field, charge density and recombination rate density in the device. We find that efficient OLEDs are possible for a proper choice of organic materials and contact parameters.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.349-353
• /
• 1999

In this paper, to fabricate the AC power electroluminescent device (PELD) with high brightness, new structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material were BaTiO3 and ZnS:Cu respectively. Fabricated AC power EL devices were estimated by optical and electrical properties of EL spectrum, brightness, CIE coordinate system, transferred charge density and EL emission wave in time domain. With above results, we found that brightness of newly proposed AC powder EL power EL device was 2754 cd/m2 at 100V, 400 Hz and compared with conventional device structure.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.281-284
• /
• 1999

In this paper, the electrical conduction, breakdown strength and dielectric properties were investigated in the interfaces of PET films. The volume resistivity and breakdown strength were decreased; especially the specimens with semiconductive layer showed the lowest breakdown strength. This decrease of electrical properties was appeared by increasing charge density in inhomogeneous layer of PET. The dielectric properties of PET did not show significant difference with PET/PET but the films with semiconductive interface layer showed the increase in capacitance and $tan\delta$ was affected by the PET rather than semiconductive layer. It is assumed that the variation of $tan\delta$ was affected by the dielectric polarization and the leakage current(charge).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.5
• /
• pp.417-422
• /
• 2001

The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.16 no.1
• /
• pp.26-32
• /
• 1979

Dry oxidation and wet oxidation processes of silicon have been examined experimentally. The oxidation temperatures were 1.10$0^{\circ}C$, 1.15$0^{\circ}C$, and 1.200 $^{\circ}C$, and oxygen flow rate was changed from 0.2 liter/min to 2.8 liter/min. From the experimental measurements, oxidation temperaturel time and oxygen flow rate have been tabutated for oxide layers 0.1$\mu$ - 1.0$\mu$ in thickness. The quality of the grown oxide layer has been investigated In terms of the dielectric constant, breakdown voltage, fixed surface charge densify (Qss/q) and mobile charge density (Q /q). From these measurements, it is concluded that the quality of the oxide layer is sufficient to expect the normal operation of MOS transistors.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.11
• /
• pp.2069-2074
• /
• 2007

The 27Al multiple quantum magic angle spinning (MQMAS) nuclear magnetic resonance (NMR) spectra of mordenite zeolites were simulated using the point charge model (PCM). The spectra simulated by the PCM considering nearest neighbor atoms only (PCM-n) or including atoms up to the 3rd layer (PCM-m) were not different from those generated by the Hartree-Fock (HF) molecular orbital calculation method. In contrast to the HF and density functional theory methods, the PCM method is simple and convenient to use and does not require sophisticated and expensive computer programs along with specialists to run them. Thus, our results indicate that the spectral simulation of the 27Al MQMAS NMR spectra obtained with the PCM-n is useful, despite its simplicity, especially for porous samples like zeolites with large unit cells and a high volume density of pores. However, it should be pointed out that this conclusion might apply only for the atomic sites with small quadrupole coupling constants.

• Journal of the Korean Ceramic Society
• /
• v.35 no.5
• /
• pp.443-450
• /
• 1998

Layered double hydroxides(LDHs) [{{{{ {Mg }_{1-x } }}{{{{ {Al }_{x } }}({{{{ {OH}_{2 } }})]ζ+({{{{ {CO }`_{3 } ^{2- } ){ }_{x/2 } }}$.${{{{ { yH}_{2 }O }} wioth variation of layer charge densitywere synthesized by co-precipitation methdo since their charge densities have a very important role to be det-ermined the physicochemical properties of layered materials. The XRD IR and thermal studies of them were discussed and the kinetic study for the decarbonation reaction was also carried out. From the results of XRD analysis we found that the lattice parameter and the unit cell volume were linearly decreased with the amount of Al substituents(x) in the vicinity of x=2∼10${\times}$1/3${\times}$10-1 but they had nearly constant values when the x are far from these vicinit. The activation energies for the decarbonation reaction of x=6.8, 10${\times}$1/3${\times}${{{{ { 10}^{-1 } }} were estimated to be 47.0, 37.6, 39.3 kcal/mol The specific surface areas(90-120 m2/g) of stable hy-drotalcite-type LDHs were dractically decreased with increasing of layer charge density.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.4
• /
• pp.92-100
• /
• 1985

New N+N/P HLE solar cells with N+ surface charge accumulated layer in the emitter region are fabricated on the N/P Si epiwafer by incorporating high fixed positive charge density (Qss) at the Si-AR layer interface. Solar cells are classified into two categories, i.e, OCI and NCI Cell depending on AR layer, SiOl and Si3 N4/sioxynitride layer respectively. The distribution of Qss in the Si-AR layer interface is examined by C-V plot. It shows that the surface charge accumulated layer is formed more effectively in the NCI cell (Qss=1.79-1.84$\times$1012cm-2) than in the OCI cell (Qss=3.03~4.40$\times$1011 cm-2). The efficiency characteristics are evaluated under the JCR halogen lamp of 100 mw/cm2. The average (maximum) conversion efficiency for active area is 15.18 (15.46)% in the OCI cell and 16.31 (17.07)% in the NCI cell.