Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Estimation of 14/50/50 PLZT Thin Flims by PLD

PLD법에 의한 14/50/50 PLZT박막의 제작과 특성평가

  • 박정흠 (김포대학 전자정보계열) ;
  • 강종윤 (한국과학기술연구원 박막연구센터) ;
  • 장낙원 (삼성전자 반도체연구소) ;
  • 박용욱 (남서울대학교 전자정보통신학부) ;
  • 최형욱 (경원대학교 전기전자공학부) ;
  • 마석범 (용인송담대학 전기설비과)
  • Published : 2001.05.01
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Abstract

The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.

Keywords

References

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