• Journal of the Korean Society for Heat Treatment
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• v.15 no.5
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• pp.219-227
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• 2002

This study has been performed to investigate the effect of $CO_2$ content on the growth characteristics of the compound layer, porous layer and corrosion characteristics of carbon steels after gaseous nitrocarburizing in $70%-NH_3-CO_2-N_2$ at $580^{\circ}C$ for 2.5 hrs. The results obtained from the experiment were the thickness of the compound and porous layers increased with increasing $CO_2$ contents. At the same fixed gas composition the thickness of the compound and porous layer increased with increasing carbon content of the specimens. X-ray diffraction analysis showed that compound layer was mainly consisted of ${\varepsilon}-Fe_{2-3}(N,C)$ and ${\gamma}^{\prime}-Fe_4N$ as the increased with $CO_2$ contents in atmosphere, compound layer was chiefly consisted of ${\varepsilon}-Fe_{2-3}(N,C)$ phase. With increasing $CO_2$ content and total flow rate in gaseous nitrocarburizing, the amount of ${\varepsilon}-Fe_{2-3}(N,C)$ phase in the compound layer was increased. The current density of passivity decreased with increasing $CO_2$ content due to the development of porous layer at the out most surface of ${\varepsilon}-Fe_{2-3}(N,C)$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.1-6
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• 2017

Tungsten carbide (WC) has been suggested as a new buffer layer for the GaN-on-Si technology. We have investigated and optimized the sputtering condition of WC layer on the Si-substrate. We confirmed the suppression of the Si melt-back phenomenon. In addition, surface energy of WC/Si layer was measured to confirm the possibility as a buffer layer for GaN growth. We found that the surface energy(${\gamma}=82.46mJ/cm^2$) of WC layer is very similar to that of sapphire substrate(${\gamma}=82.71mJ/cm^2$). We grow GaN layer on the WC buffer by using gas-source MBE, and confirm that it is available to grow a single crystalline GaN layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta\theta_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 200Oe. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.

• Journal of Surface Science and Engineering
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• v.37 no.4
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• pp.196-199
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• 2004

Seedlayers with low surface energy which increases the density of nucleation sites in the initial growth region of the recording layer deposited on them was studied to reduce grain size in recording layer. The seedlayer with low surface energy was so effective to attain finer grain in magnetic upper-layers. The Ni-Fe-O intermediate layer with low surface energy was found to be effective in reduction of grain size as well as magnetic cluster size of Co-Cr-Ta-Pt recording layer. Furthermore, the reduction of grain size in Co-Cr-Ta-Pt recording layer on Ni-Fe-O intermediate layer with low surface energy led to decrease the noise level in the high recording density region.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.684-689
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• 2019

Single crystals, which have complexed composition, are fabricated by solid state grain growth. However, it is hard to achieve stable properties in a single crystal due to trapped pores. Aerosol deposition (AD) is suitable for fabrication of single crystals with stable properties because this process can make a high density coating layer. Because of their unique features (nano sized grains, stress inner site), it is hard to fabricate single crystals, and so studies of grain growth behavior of AD film are essential. In this study, a $BaTiO_3$ coating layer with ${\sim}9{\mu}m$ thickness is fabricated using an aerosol deposition method on (100) and (110) cut $SrTiO_3$ single crystal substrates, which are adopted as seeds for grain growth. Each specimen is heat-treated at various conditions (900, 1,100, and $1,300^{\circ}C$ for 5 h). $BaTiO_3$ layer shows different growth behavior and X-ray diffraction depending on cutting direction of $SrTiO_3$ seed. Rectangular pillars at $SrTiO_3$ (100) and laminating thin plates at $SrTiO_3$ (110), respectively, are observed.

• Asian-Australasian Journal of Animal Sciences
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• v.25 no.10
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• pp.1445-1450
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• 2012

A study was conducted to evaluate effects of alfalfa meal on growth performance and gastrointestinal tract development of growing layer ducks to provide evidence for application of alfalfa meal in the duck industry. Two hundred and fifty-six healthy Shaoxing 7-wk old growing layer ducks were selected and randomly allocated to 1 of 4 dietary treatments based on corn and soybean meal and containing 0, 3, 6, and 9% of alfalfa meal for 8 wks. Each treatment consisted of 4 replicates of 16 ducks each. Briefly, birds were raised in separate compartments, and each compartment consisted of three parts: indoor floor house, adjacent open area and a connecting water area. The results showed: i) Growing ducks fed alfalfa meal diet were not significantly different in average daily gain, feed intake and gain-to-feed ratio from those fed no alfalfa diet (p>0.05). ii) Alfalfa meal increased the ratio crop, gizzard to live weight, caecum to live weight, the caecum index of growing ducks (p<0.05). iii) Villus height in duodenum and jejunum of growing ducks increased significantly with the increase of alfalfa meal levels (p<0.05). Crypt depth in duodenum and jejunum of growing ducks decreased significantly with the increase of alfalfa meal levels (p<0.05). This experiment showed that feeding of alfalfa meal to growing layer ducks could improve gastrointestinal tract growth and small intestinal morphology without effect on performance. This experiment provides evidence that alfalfa meal is a very valuable feedstuff for growing layer ducks.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.596-601
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• 2009

Double-layered ZnO nanostructures have been synthesized by aqueous solution method on (001) plane of ZnO nanorod. A stepwise changing of aqueous solution concentration gave rise to a new nano-structured layer consisting of either multiple of nanorods or nanowires with much smaller radii than that of the ZnO nanorod on which the new layer was grown. As the first step the ZnO nanorods have been grown to have the (001) preferential orientation in the aqueous solution consisting of 0.1M zinc nitrate and 0.1 M HMT. This preferentially aligned ZnO nanorods have been regrown in either a less diluted solution of 0.01M zinc nitrate and 0.01 M HMT or a more diluted solution of 0.005M zinc nitrate and 0.01 M HMT. A new nano-layer consisting of numerous aligned nanorods or nanowires has been produced on the (001) planes of ZnO nanorods. The growth mechanism for this double layered ZnO nanostructure is ascribed to the (001) polar surface energy instability and inhibition of (001) plane growth due to the step-wise change of aqueous solution concentration; ZnO nuclei formed on the (001) plane grow preferentially in (010) plane instead of (001) plane to reduce the total surface energy. Surface area of ZnO nanostructure can be increased in orders of magnitudes by forming a new layer consisting of smaller nanorods/nanowires on (001) plane of ZnO nanorods.

• ALGAE
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• v.18 no.4
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• pp.281-288
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• 2003

To study the environmental features causing a bloom of the novel dinoflagellate Heterocapsa circularisquama (Dinophyceae), hydrographic and chemical aspects were measured in the Uranouchi Bay, Kochi Prefecture, Japan, from January to December, 1997. The cell density of H. circularisquama increased rapidly in early October, and dropped sharply in mid-October. Growth rate of H, circularisquama during bloom period appeared 1.50 division day$^{-1}$ under high water temperature (25$^{\circ}C$) and salinity (32 psu) conditions. Althought the result from hydrographic aspect indicated good condition for their growth, dissolved inorganic phosphorus (DIP) concentration in surface layer before bloom formation was less than 0.70uM, which is lower than their half saturation constant(Ks). Dissolved inorganic nitrogen(DIN): DIP ratio was > 30, indicating potential P-limitation. However, before bloom formation period of H. circularisquama, DIP concentrations were high in bottom layer (> 4.0 uM). Some studies reported that H. circularisquama had the ability to migrate vertically and to utilize dissolved organic phosphorus (DOP). Thus, DIP in bottom layer might have been utilized by H. circularisquama for their growth.DOP might have weakly affected their growth because of low reactive DOP concentrations owing to low DOP concentration (ca. 0.39 uM). Thus, if nutrient condition of bottom layer in Uranuchi Bay is not improved, the outbreaks of H. circularisquama red tides may became an annual feature.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.