한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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- Pages.77-80
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- 2001
하지층기판온도에 따른 CoCrTa/Si 이층박막의 특성변화
Characteristics variation of CoCrTa/Si double layer thin film on variation of underlayer substrate temperature
- 박원효 (경원대학교 공대 전지전자공학부) ;
- 김용진 (경원대학교 공대 전지전자공학부) ;
- 금민종 (경원대학교 공대 전지전자공학부) ;
- 가출현 (경원대학교 공대 전지전자공학부) ;
- 손인환 (신성대학 전기과) ;
- 최형욱 (경원대학교 공대 전지전자공학부) ;
- 김경환 (경원대학교 공대 전지전자공학부)
- Park, W.H. ;
- Kim, Y.J. ;
- Keum, M.J. ;
- Ka, C.H. ;
- Son, I.H. ;
- Choi, H.W. ;
- Kim, K.H.
- 발행 : 2001.11.08
초록
Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation
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