• Journal of IKEEE
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• v.13 no.1
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• pp.87-93
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• 2009

The paper introduces a silicon controlled rectifier (SCR)-based device with high holding voltage for ESD power clamp. The holding voltage can be increased by extending a p+ cathode to the first n-well and adding second n-well wrapping around n+ cathode. The increase of the holding voltage above the supply voltage enables latch-up immune normal operation. In this study, the proposed device has been simulated using synopsys TCAD simulator for electrical characteristic, temperature characteristic, and ESD robustness. In the simulation result, the proposed device has holding voltage of 3.6V and trigger voltage of 10.5V. And it is confirmed that the device could have holding voltage of above 4V with the size variation of extended p+ cathode and additional n-well.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.2
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• pp.203-209
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• 2004

Compliant bi-stable mechanism allows two stable states within its operation range staying at one of the local minimum states of the potential energy. Energy storage characteristics of the bi-stable mechanism offer two distinct and repeatable stable states, which require no power input to maintain it at each stable state. This paper suggests an equivalent model of the chevron-type bi-stable microactuator using the equivalent spring stiffness in the rectilinear and the rotational directions. From this model the range of spring stiffness where the bi-stable mechanism can be operated is analyzed and compared with the results of the FEA (Finite Element Analysis) using ANSYS for the buckling analysis, both of which show a good agreement. Based on the analysis, a newly designed chevron-type bi-stable MEMS actuator using hinges is suggested for the latch-up operation. It is found that the experimental response characteristics of around 36V for the bi-stable actuation for the 60$mu extrm{m}$ stroke correspond very well to the results of the equivalent model analysis after the change in cross-sectional area by the fabrication process is taken into account. Together with the resonance frequency experiment where 1760Hz is measured, it is shown that the chevron-type bi-stable MEMS actuator using hinges is applicable to the optical switch as an actuator.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.1-5
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• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW_PGM(primary gate middle) and optimal CPS(counter pocket source) implant demonstrate the stable ESD protection performance with high latch-up immunity.

• Journal of Satellite, Information and Communications
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• v.8 no.4
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• pp.124-129
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• 2013

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latch-up problem during normal operation. However, a modified NSCR_PPS device with counter pocket source(CPS) and partial p-type well(PPW) structure demonstrates highly latch-up immune current-voltage characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.338-341
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19$\mu\textrm{m}$. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGET and LTIGBT The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively. Because that the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. We fabricated He proposed LTEIGBT after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V,

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.791-794
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• 2013

Electronic systems may be cause of various serious failures due to an ionizing radiation effect when exposed to a prompt gamma-ray pulse. This transient electrical malfunction can, in some cases, results in a failure of the electronic system of which the circuits are a part. Transient radiation measurement and evaluation system is required to development for enhanced radiation-resistance against the initial nuclear radiation produced by the detonation of a nuclear weapon of semiconductor devices. In these studies, we performed the following work. In the first part of the work, we carried out a SPICE simulation applied to nuclear radiation condition for PN diode and we also investigated the photocurrent by a pulsed gamma-ray on a PN diode using a TCAD simulation.

• Journal of IKEEE
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• v.24 no.3
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• pp.890-894
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• 2020

In this paper, we propose an ESD protection device with improved electrical characteristics through structural changes of LVTSCR, a typical ESD protection device. The proposed ESD protection device has a higher holding voltage than the existing LVTSCR by inserting a long N+ drift region and additional P-Well and N-Well, and improves the latch-up immunity, a chronic disadvantage of a general SCR-based ESD protection device. In addition, the effective base width of parasitic BJTs was set as a design variable, and the electrical characteristics of the proposed ESD protection device were verified through Synopsys' TCAD simulation so that it can be applied to the required application by applying the N-Stack technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.758-763
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19w. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGBT and LTIGBT. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and TIGBT are 60V and 100V, respectively. Because the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V.

• Journal of Satellite, Information and Communications
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• v.9 no.4
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• pp.63-68
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• 2014

Electrostatic Discharge(ESD) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW demonstrate the stable ESD protection performance with high latch-up immunity.