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http://dx.doi.org/10.4313/JKEM.2002.15.9.758

A Novel Lateral Trench Electrode IGBT for Suprior Electrical Characteristics  

강이구 (고려대학교 전기공학과)
오대석 (고려대학교 전기공학과)
김대원 (고려대학교 전기공학과)
김대종 (고려대학교 전기공학과)
성만영 (고려대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.9, 2002 , pp. 758-763 More about this Journal
Abstract
A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19w. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGBT and LTIGBT. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and TIGBT are 60V and 100V, respectively. Because the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V.
Keywords
Trench Eelctrode; Latch-up; Forward blocking voltage; High speed;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
연도 인용수 순위
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