• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.1
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• pp.7-15
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• 2002

This paper is concerned with remote environment monitoring & control for the breeding house as scattering far and wide. The environment data is detected in the breeding house that is collected to one processor. It's adapted to the PSTN(public switch tele-phone network) and multi-processing for exchange the environment data and the control data in between the manager and a breeding house by micro-processor. We have designed the algorithm of the communication sequence through the experimental research. This system is composed of sensor interface, FSK communications, LED display, data latch and MCS-51 single-chip. The S/W is composed with data acquisition by multi-processing, data communication and interrupt. And this paper is Proposed the DB structure algorithm concern to a mount scale using web design. The subject is a performance of effective management for the breeding house.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.72-78
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• 2009

This paper proposes a low phase noise ring voltage controlled oscillator(VCO) with a standard $0.13{\mu}m$ CMOS process for PLL circuit using the VCO-gain-controlled Delay cell. The proposed Delay cell architecture with a active resistor using a MOS transistor. This method can reduced a VCO gain so that improve phase noise. And, Delay cell consist of Wide-Swing Cascode current mirror, Positive Latch and Symmetric load for low phase noise. The measurement results demonstrate that the phase noise is -119dBc/Hz at 1MHz offset from 1.9GHz. The VCO gain and power dissipation are 440MHz/V and 9mW, respectively.

• Korean Journal of Social Welfare
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• v.68 no.2
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• pp.53-77
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• 2016

This research is performed to verify a suggestive understanding and undertone on radical social workers's balanced practical experiences responding to the current situation to discover the new practical way of Korean social work so as to overcome the limitation of the above mentioned microscopic approach. It focuses on Giorgi's descriptive phenomenological study and further relating areas to provide information on Radical Social Workers'(RSW) social work practical and specific experiences and fundamental implication. This research has been participated with 9 RSWs, led the past democratic movement, have participated with this research. The data covers 84 meaningful units, 24 exposed topics, and 7 essential themes. The essential themes are as follow; lifting a latch into prepared changes, unavoidable destiny, drive for change from the bottom, collaborated forces of minority groups, changing the oppressive laws and institutions to more favorable ones for minorities, being patient and waiting required as birds breaking eggs to become a bird. Based on the collected data, Researchers discuss the main features and issues of our instituted social work practices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.79-85
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• 2009

The design of a 3.2 Gb/s serial link receiver in $0.18{\mu}m$ CMOS process is presented. The major factors limiting the performance of high-speed links are transmission channel bandwidth, timing uncertainty. The design uses a multi-level signaling(4-PAM) to overcome these problems. Moreover, to increase data bit-rate and lower BER, we designed this circuit by using a current mode amplifier, Current-mode Logic(CML) sampling latches. The 4-PAM receiver achieves 3.2 Gb/s and BER is less than $1.0\;{\times}\;10^{-12}$. The $0.5\;{\times}\;0.6\;mm^2$ chip consumes 49 mA at 3.2 Gb/s from a 1.8-V supply.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.8
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• pp.2064-2071
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• 1998

A new digital clock level translator has been designed in order to produce a clock source of the internal logic circuits. The translator output has 50% duty ratio from small sinusoidal input such as TCXO which oscillates itself in poratable components. The circuit consists of positive and negative comparators, RS latch, charge pump, and reference vol- tage generator. It detects pulse width of the output waveform and feedbacks the control signal to the input com-parator. It detects pulse width of the output waveform and feedbacks the control signal to the input com-parator reference, producing output waveform with valid 50% duty ratio of the digital signal level. The designed level translator can be used as a sampling clock source of ADC, PLL and the colck source of the clock synthesizer. The circuit wasdesigned in a 0.8.mu.m analog CMOS technology with double metal, double poly, and BSIM3 circuit simulation model. From our experimental results, a stable operating characteristics of 50 +3% duty ratio was obtained from the sinusoidal input wave of 370 mV.

• Journal of IKEEE
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• v.23 no.3
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• pp.954-961
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• 2019

This paper suggests an advanced 8T SRAM which can operate properly in subthreshold voltage regime. The memory cell consists of symmetric 8 transistors, in which the latch storing data is controlled by a column-wise assistline. During the read, the data storage nodes are temporarily decoupled from the read path, thus eliminating the read disturbance. Additionally, the cell keeps the noise-vulnerable 'low' node close to the ground, thereby improving the dummy-read stability. In the write, the boosted wordline facilitates to change the contents of the memory bit. At 0.4 V supply, the advanced 8T cell achieves 65% higher dummy-read stability and 3.7 times better write-ability compared to the commercialized 8T cell. The proposed cell and circuit techniques have been verified in a 16-kbit SRAM array designed with an industrial 180-nm low-power CMOS process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.1-9
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• 2009

In this paper, a small area 12-bit 300MSPS CMOS Digital-to-Analog Converter(DAC) is proposed for display systems. The architecture of the DAC is based on a current steering 6+6 segmented type, which reduces non-linearity error and other secondary effects. In order to improve the linearity and glitch noise, an analog current cell using monitoring bias circuit is designed. For the purpose of reducing chip area and power dissipation, furthermore, a noble self-clocked switching logic is proposed. To verify the performance, it is fabricated with $0.13{\mu}m$ thick-gate 1-poly 6-metal N-well Samsung CMOS technology. The effective chip area is $0.26mm^2$ ($510{\mu}m{\times}510{\mu}m$) with 100mW power consumption. The measured INL (Integrated Non Linearity) and DNL (Differential Non Linearity) are within ${\pm}3LSB$ and ${\pm}1LSB$, respectively. The measured SFDR is about 70dB, when the input frequency is 15MHz at 300MHz clock frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.53-63
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• 2009

This work proposes a 10b 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS ADC for WLAN such as an IEEE 802.11n standard. The proposed ADC employs a three-stage pipeline architecture and minimizes power consumption and chip area by sharing as many circuits as possible. Two multiplying DACs share a single amplifier without MOS switches connected in series while the shared amplifier does not show a conventional memory effect. All three flash ADCs use only one resistor ladder while the second and third flash ADCs share all pre-amps to further reduce power consumption and chip area. The interpolation circuit employed in the flash ADCs halves the required number of pre-amps and an input-output isolated dynamic latch reduces the increased kickback noise caused by the pre-amp sharing. The prototype ADC implemented in a 0.18um n-well 1P6M CMOS process shows the DNL and INL within 0.83LSB and 1.52LSB at 10b, respectively. The ADC measures an SNDR of 52.1dB and an SFDR of 67.6dB at a sampling rate of 100MS/s. The ADC with an active die area of $0.8mm^2$ consumes 27.2mW at 1.8V and 100MS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.7-17
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• 2010

In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlines. They are accessed by totally new read and write method which results in low operating power dissipation in the nature. Moreover, the design reduces the leakage current in the memory cells. The proposed SRAM has been demonstrated through 16-kbit test chip fabricated in a 0.18-${\mu}m$ CMOS process. It shows 17.5 ns access at 1.8-V supply while consuming dynamic power of $87.6\;{\mu}W/MHz$ (for read cycle) and $70.2\;{\mu}W/MHz$ (for write cycle). Compared with those of the conventional 6-transistor SRAM, it exhibits the power reduction of 30 % (read) and 42 % (write) respectively. Silicon measurement also confirms that the proposed SRAM achieves nearly 64 % reduction in the total standby power dissipation. This novel SRAM might be effective in realizing low-power embedded memory in future mobile applications.

• Journal of IKEEE
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• v.7 no.1 s.12
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• pp.9-15
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• 2003

An optimized finite-field multiplier is proposed for encryption and error correction devices. It is based on a modified Linear Feedback Shift Register (LFSR) which has lower power consumption and smaller area than prior LFSR-based finite-field multipliers. The proposed finite field multiplier for GF(2n) multiplies two n-bit polynomials using polynomial basis to produce $z(x)=a(x)^*b(x)$ mod p(x), where p(x) is a irreducible polynomial for the Galois Field. The LFSR based on a serial multiplication structure has less complex circuits than array structures and hybrid structures. It is efficient to use the LFSR structure for systems with limited area and power consumption. The prior finite-field multipliers need 3${\cdot}$m flip-flops for multiplication of m-bit polynomials. Consequently, they need 6${\cdot}$m latches because one flip-flop consists of two latches. The proposed finite-field multiplier requires only 4${\cdot}$m latches for m-bit multiplication, which results in 1/3 smaller area than the prior finite-field multipliers. As a result, it can be used effectively in encryption and error correction devices with low-power consumption and small area.