• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1407-1411
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• 한국레이저가공학회지
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• 제6권2호
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• pp.9-17
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 The IMAPS-Korea Workshop 2001 Emerging Technology on packaging
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• pp.104-109
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• 2001

A 355 nm (3.5 eV) neodymium:yttrium aluminum gamet laser, produced by a harmonic generator, was used to create silver metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+ ions. The pulse width and frequency of the laser were 8 ns and 10 Hz, respectively. Heat treatment was conducted at 570 C for 1 h, following laser irradiation, to produce crystalline growth, after which a LiAlSi3O8 crystal phase appeared in the laser-irradiated Li2O A1203 SiO2 glass. For the Present study, we compared the effect of laser-induced crystallization on glass crystallization with that of spontaneous crystallization by heat treatment.

• 한국재료학회지
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• 제18권3호
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• pp.113-116
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• 2008

A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.

• 융합정보논문지
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• 제9권5호
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• pp.117-124
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• 2019

본 논문에서는 AMOLED 디스플레이 구동회로로 사용되는 박막트랜지스터의 구성요소 중에서 반도제 물질 제조의 최근 동향에 대해 논한다. 트랜지스터에 적용을 위해 특성이 좋은 반도체 막을 얻는 방법으로 비정질 실리콘을 다결정 실리콘으로 변화시켜야 하는데 레이저와 열처리 방법이 있으며, 레이저를 이용한 기술에는 SLS(Sequential Lateral Solidification), ELA(Excimer Laser Annealing), TDX(Thin-beam Directional Crystallization), 열처리 기술에는 SPC(Solid Phase Crystallization), SGS(Super Grain Silicon), MIC(Metal Induced Crystallization), FALC(Field Aided Lateral Crystallization)가 대표적이며, 이들에 대해 상세히 설명한다. 본 연구실에서 연구중인 레이저 결정화 기술의 대형 AMOLED 디스플레이 제작을 위한 연구 내용도 다룬다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1116-1118
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• 2005

We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures ($<150^{\circ}C$). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as $70\;mJ/cm^2$, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2004년도 춘계학술발표대회 및 제6회 신소재 심포지엄
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• pp.60-60
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• 2004

• 마이크로전자및패키징학회지
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• 제7권2호
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• pp.43-46
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• 2000

Nd:YAG laser of 355 nm wavelength, which amounts to 3.5 eV, produced by a harmonic generator was used to create Ag metallic particles as seeds for nucleation in photosensitive glass containing $Ag^+$ and $Ce^{3+}$ . The pulse widths and frequency of the laser were 8ns and 10 Hz, respectively. For crystalline growth, heat-treatment following laser irradiation was carried out at $570^{\circ}C$ for 1h. Then, the $LiAlSi_3O^8$ crystal phase appeared in the laser irradiated lithium aluminum silicate glass. We present the effect of laser-induced nucleation compared with spontaneous nucleation by heat treatment fur crystallization in the glass.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.112-117
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• 2000

Nd:YAG laser of 355nm wavelength, which amounts to 3.5eV, produced by a harmonic generator was used to create Ag metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+. The pulse widths and frequency of the laser were 8ns and 10Hz, respectively. For crystalline growth, heat-treatment following laser irradiation was carried out at $570^{\circ}C$ fur 1h. Then, the LiAlSi3O8. crystal phase appeared in the laser irradiated lithium aluminum silicate glass. We present the effect of laser-induced nucleation compared with spontaneous nucleation by heat treatment for crystallization in the glass.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.911-914
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• 2007

We developed the laser annealing system using green laser of 261W(5kHz) and 75.5mJ/pulse(2kHz). We confirmed that this system makes it possible to form two kinds(large or uniformed grain) of poly-Si by changing its polarized directions. By using ${\mu}-crystal-Si$ as irradiated films, grain size uniformity is better than that using a-Si.