High Performance of Crystallization for LPTS TFTs Using Solid Green Laser

  • Nishida, K. (IHI Corporation) ;
  • Kawakami, R. (IHI Corporation) ;
  • Izawa, J. (IHI Corporation) ;
  • Kawaguchi, N. (IHI Corporation) ;
  • Matsuzaka, F. (IHI Corporation) ;
  • Masaki, M. (IHI Corporation) ;
  • Morita, M. (IHI Corporation) ;
  • Yoshinouchi, A. (IHI Corporation) ;
  • Kawasaki, Y. (IHI Corporation)
  • Published : 2007.08.27

Abstract

We developed the laser annealing system using green laser of 261W(5kHz) and 75.5mJ/pulse(2kHz). We confirmed that this system makes it possible to form two kinds(large or uniformed grain) of poly-Si by changing its polarized directions. By using ${\mu}-crystal-Si$ as irradiated films, grain size uniformity is better than that using a-Si.

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