한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Laser Crystallization of a-Si:H films prepared at Ultra Low Temperature($<150^{\circ}C$) by Catalytic CVD

  • Lee, Sung-Hyun (Dept. of Electronics Engineering, Sejong University) ;
  • Hong, Wan-Shick (Dept. of Electronics Engineering, Sejong University) ;
  • Kim, Jong-Man (Samsung Advanced Institute of Technology (SAIT)) ;
  • Lim, Hyuck (Samsung Advanced Institute of Technology (SAIT)) ;
  • Park, Kuyng-Bae (Samsung Advanced Institute of Technology (SAIT)) ;
  • Cho, Chul-Lae (Dept. of Electronics Engineering, Sejong University) ;
  • Lee, Kyung-Eun (Dept. of Electronics Engineering, Sejong University) ;
  • Kim, Do-Young (Samsung Advanced Institute of Technology (SAIT)) ;
  • Jung, Ji-Sim (Samsung Advanced Institute of Technology (SAIT)) ;
  • Kwon, Jang-Yeon (Samsung Advanced Institute of Technology (SAIT)) ;
  • Noguch, Takashi (Samsung Advanced Institute of Technology (SAIT))
  • Published : 2005.07.19
Download PDF
⟨ Previous Next ⟩

Abstract

We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures ($<150^{\circ}C$). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as $70\;mJ/cm^2$, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

Keywords