한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.1116-1118
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- 2005
Laser Crystallization of a-Si:H films prepared at Ultra Low Temperature($ < 150^{\circ}C$ ) by Catalytic CVD
- Lee, Sung-Hyun (Dept. of Electronics Engineering, Sejong University) ;
- Hong, Wan-Shick (Dept. of Electronics Engineering, Sejong University) ;
- Kim, Jong-Man (Samsung Advanced Institute of Technology (SAIT)) ;
- Lim, Hyuck (Samsung Advanced Institute of Technology (SAIT)) ;
- Park, Kuyng-Bae (Samsung Advanced Institute of Technology (SAIT)) ;
- Cho, Chul-Lae (Dept. of Electronics Engineering, Sejong University) ;
- Lee, Kyung-Eun (Dept. of Electronics Engineering, Sejong University) ;
- Kim, Do-Young (Samsung Advanced Institute of Technology (SAIT)) ;
- Jung, Ji-Sim (Samsung Advanced Institute of Technology (SAIT)) ;
- Kwon, Jang-Yeon (Samsung Advanced Institute of Technology (SAIT)) ;
- Noguch, Takashi (Samsung Advanced Institute of Technology (SAIT))
- Published : 2005.07.19
Abstract
We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures (
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