• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.141-148
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• 2006

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low signal swing range, maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD Phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, The high speed I/O interface circuit with the low triggered ESD protection device in one-chip was designed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.473-476
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• 2002

고도로 발달된 정보화 시대에서 우리가 원하는 정보를 짧은 시간, 적은 비용으로 서로 주고받기 위해서는 이것에 맞는 시스템이 요구된다. 반도체 chip의 대용량과 고속화됨으로써 TTL, LVTTL 등이 data 100Mbps 정도를 안전하게 전달 할 수 있는 능력이 있으므로 그 이상을 전달할 수 있는 새로운 Logic level이 필요하게 되었다. 이에 맞추어 신호 level의 여러 가지 중 본 논문에서는 Virtex II XC2V 1000 FF896을 이용하여 Differential I/O LVDS(Low Voltage Differential Signaling) level 특성을 clock, Data와의 전송 관계를 Eye_Pattern을 통해 살펴보았다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.70-78
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• 2009

This paper addresses the analysis and the design optimization of differential interconnects for high-speed Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and trace space in differential printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, and time-domain transient simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects. We believe that the proposed approach is very helpful to optimize high-speed differential FPCB interconnects for LVDS applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.89-93
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• 2007

This paper presents the design and the implementation of input/output (I/O) interface circuits for 2.5 Gbps operation in a 3.3V 0.35um CMOS technology. Due to the differential transmission technique and low voltage swing, LVDS(low-voltage differential signaling) has been widely used for high speed transmission with low power consumption. This interface circuit is fully compatible with the LVDS standard. The LVDS proposed in this paper utilizes a telescopic amplifier. This circuit is operated up to 2.3 Gbps. The circuit has a power consumption of 25. 5mW. This circuit is designed with Samsung $0.35{\mu}m$ CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

• The Journal of the Acoustical Society of Korea
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• v.38 no.2
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• pp.240-245
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• 2019

This paper is a study result on long distance transmission of underwater acoustic sensor data over cable. The data transceiver is designed using the LVDS (Low Voltage Differential Signaling) transmission scheme, and the jitter characteristics are analyzed by measuring the long distance transmission signal through the cable. In order to reduce the jitter, a pre-emphasis technique is applied to compensate the transmitting signal to be attenuated by long distance transmission, and the transmission characteristics were verified according to the distance.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.979-982
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• 2003

Due to the differential transmission technique and low voltage swing, LVDS has been widely used for high speed transmission with low power consumption. This paper presents the design and implementation of interface circuits for 1.5Gb/s operation in 0.35um CMOS technology. The interface circuit ate fully compatible with the low-voltage differential signaling(LVDS) standard. The LVDS proposed in this paper utilizes a sense amplifiers instead of the conventional differential pre-amplifier, which provides a 1.5Gb/s transmission speed with further reduced driver output voltage. Furthermore, the reduced driver output voltage results in reducing the power consumption.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.45 no.2
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• pp.26-36
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• 2008

Due to the differential and low voltage swing, Low Voltage Differential Signaling(LVDS) has been widely used for high speed data transmission with low power consumption. This paper proposes new LVDS I/O interface circuits for more than 1.3 Gb/s operation. The LVDS receiver proposed in this paper utilizes a sense amp for the pre-amp instead of a conventional differential pre-amp. The proposed LVDS allows more than 1.3 Gb/s transmission speed with significantly reduced driver output voltage. Also, in order to further improve the power consumption and noise performance, this paper introduces an inductance impedance matching technique which can eliminate the termination resistor. A new form of unfolded impedance matching method has been developed to accomplish the impedance matching for LVDS receivers with a sense amplifier as well as with a differential amplifier. The proposed LVDS I/O circuits have been extensively simulated using HSPICE based on 0.35um TSMC CMOS technology. The simulation results show improved power gain and transmission rate by ${\sim}12%$ and ${\sim}18%$, respectively.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.805-808
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• 2005

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD(Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at same time. maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps, Also, the LIGCSCR(Latch-up Immune Gate Coupled SCR)was designed. It consists of PLVTSCR (P-type Low Voltage Trigger SCR), control NMOS and RC network. The triggering voltage was simulated to 3.6V. And the latch-up characteristics were improved. Finally, we performed the layout high speed I/O interlace circuit with the low triggered ESD protection device in one-chip.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.761-764
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• 2007

This paper addresses the analysis and the design optimization of differential interconnects for Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and πace space in differential flexible printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, time-domain transient simulations, and S-parameter simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.731-734
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• 2005

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at the same time. Maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, we performed the layout high speed I/O interface circuit with the low triggered ESD protection device in one-chip.