• 전자공학회논문지A
• /
• 제33A권6호
• /
• pp.172-177
• /
• 1996

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}$-Si:H) and LPCVD (${\alpha}$-Si). The electrical properties, surface roughness and crystallinity of crystallized thin films have been measured. The dc conductivities, crystallinity andsurface roughness of the films increased as the laser energy density and shot density were increased. The properties of laser annealed films deposited by LPCVD were better than those of thin films deposite by PECVD. We have also found that the multiple shots with relative low energy density were more benifical to the improsvement of surface roughness than the single shot with high energy density preserving the crystallinity.

• 한국가스학회지
• /
• 제18권5호
• /
• pp.1-5
• /
• 2014

첨단과학이 발전하면서 반도체의 필요성은 끊임없이 요구되고 있으며, 이러한 반도체 공정에서는 다량의 독성가스를 이용한 공정이 많다. 이러한 공정에서 가스의 누설로 인한 사고의 위험성은 항상 내재되어 있는 실정이다. 특히 국내 독성가스 사고는 암모니아와 염소에 의한 사고가 대부분이다. 따라서 본 논문에서는 LPCVD 공정에서 사용하는 암모니아와 염소의 누출로 인한 피해를 예측하여 안전에 만전을 기하고자 한다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
• /
• pp.89-89
• /
• 1995

• 대한기계학회논문집B
• /
• 제22권5호
• /
• pp.651-660
• /
• 1998

In the LPCVD reactor the temperature variations within the wafer load are the most important factor to maintain the thickness of the materials deposited on the surface of the wafer constant and to affect the deformation of each wafer. In this study the temporal variations of radial and axial temperature nonuniformities of each wafer in the LPCVD reactor are numerically estimated by assuming diffuse reflection. To verify the validity of the present numerical results, the present results obtained from the transient analysis are compared with those of Badgwell's work in which a steady-state condition was assumed. The main objective of this work is to determine the temporal variations of the temperature of each wafer in the LPCVD process since the wafers experience severe change in temperature in the early stage of the process.

• 한국가시화정보학회지
• /
• 제14권2호
• /
• pp.25-30
• /
• 2016

The wafer temperature and its uniformity inside the LPCVD chamber were analyzed. The temperature uniformity at the end of the wafer load depends on the heat-insulating cap. The finite difference method was used to investigate the radiation and conduction heat transfer mechanisms, and the temperature field and heat diffusion in the LPCVD chamber was visualized. It was found that the temperature uniformity of the wafers could be controlled by the size and distance of the heat-insulating cap.

• 대한전기학회논문지
• /
• 제40권7호
• /
• pp.670-674
• /
• 1991

This paper presents the material properties of LPCVD silicon films formed using Si2H6 gas at various deposition temperatures. To study the structural properties depending on the deposition temperature, XRD, EBD and TEM analyses were used. The maximum grain size in this experiment was obtained at the deposition temperature of 485ø C. It is discussed that LPCVD films formed below the deposition temperature of 485ø C are promising for low temperature TFT applications. The enhancement of the film characteristics results from the reduction of grain boundary density. We also observed that the film properties of Si2H6 at 600ø C was quite different from those of Si H4 at 600ø C. It has shown that the grain structure from a TEM analysis was elliptical and not dependent on the deposition temperature.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
• /
• pp.92-92
• /
• 1996

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
• /
• pp.145-146
• /
• 1993

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1996년도 재료학회 추계학술발표회
• /
• pp.113-113
• /
• 1996

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
• /
• pp.42-42
• /
• 1996