• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.172-177
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• 1996

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}$-Si:H) and LPCVD (${\alpha}$-Si). The electrical properties, surface roughness and crystallinity of crystallized thin films have been measured. The dc conductivities, crystallinity andsurface roughness of the films increased as the laser energy density and shot density were increased. The properties of laser annealed films deposited by LPCVD were better than those of thin films deposite by PECVD. We have also found that the multiple shots with relative low energy density were more benifical to the improsvement of surface roughness than the single shot with high energy density preserving the crystallinity.

• Journal of the Korean Institute of Gas
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• v.18 no.5
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• pp.1-5
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• 2014

As high-tech science has developed, the need of semiconductor is required constantly. However, there are many processes which use a great deal of poisonous gas in the semiconductor process, so the dangerousness by a gas leak is latent in these processes. Especially, the accident of toxic gas is almost made by ammonia and chlorine. Therefore this report estimates the damage by the leak of ammonia and chlorine used in LPCVD system.

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.89-89
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• 1995

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.5
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• pp.651-660
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• 1998

In the LPCVD reactor the temperature variations within the wafer load are the most important factor to maintain the thickness of the materials deposited on the surface of the wafer constant and to affect the deformation of each wafer. In this study the temporal variations of radial and axial temperature nonuniformities of each wafer in the LPCVD reactor are numerically estimated by assuming diffuse reflection. To verify the validity of the present numerical results, the present results obtained from the transient analysis are compared with those of Badgwell's work in which a steady-state condition was assumed. The main objective of this work is to determine the temporal variations of the temperature of each wafer in the LPCVD process since the wafers experience severe change in temperature in the early stage of the process.

• Journal of the Korean Society of Visualization
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• v.14 no.2
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• pp.25-30
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• 2016

The wafer temperature and its uniformity inside the LPCVD chamber were analyzed. The temperature uniformity at the end of the wafer load depends on the heat-insulating cap. The finite difference method was used to investigate the radiation and conduction heat transfer mechanisms, and the temperature field and heat diffusion in the LPCVD chamber was visualized. It was found that the temperature uniformity of the wafers could be controlled by the size and distance of the heat-insulating cap.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.7
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• pp.670-674
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• 1991

This paper presents the material properties of LPCVD silicon films formed using Si2H6 gas at various deposition temperatures. To study the structural properties depending on the deposition temperature, XRD, EBD and TEM analyses were used. The maximum grain size in this experiment was obtained at the deposition temperature of 485ø C. It is discussed that LPCVD films formed below the deposition temperature of 485ø C are promising for low temperature TFT applications. The enhancement of the film characteristics results from the reduction of grain boundary density. We also observed that the film properties of Si2H6 at 600ø C was quite different from those of Si H4 at 600ø C. It has shown that the grain structure from a TEM analysis was elliptical and not dependent on the deposition temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.92-92
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.145-146
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.113-113
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.42-42
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• 1996