• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.1
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• pp.142-151
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• 2015

This paper proposes a method for detection of objects temporally stop moving in video sequences taken by a moving camera. Even though the consequence of missed detection of those objects could be catastrophic in terms of application level requirements, not much attention has been paid in conventional approaches. In the proposed method, we introduce cues for consistent detection and tracking of objects: motion potential, position potential, and color distribution similarity. Integration of the three cues in the graph-cut algorithm makes possible to detect objects that temporally stop moving and are newly appearing. Experiment results prove that the proposed method can not only detect moving objects but also track objects stop moving.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.126-129
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.63-64
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• 2006

Here we present detailed simulation results of trench field stop IGBTs. Besides the reduced on-state voltage drop there is also an Increase of forward blocking voltage. A trench gate IGBT has low on-state voltage drop mainly due to the removal of the JFET region and a field stop IGBT has high forward blocking voltages due to the trapezoidal field distribution under blocking condition. We have simulated the static characteristics of TIGBT with field stop technology by 2D simulator(MEDICI). The simulated result of forward blocking voltage and on-state voltage drop is about 1,408V and 1.3V respectively at $110{\mu}m$ N-drift thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.2
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• pp.113-118
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• 2014

Tidal power is one of new and renewable energy sources. Tidal power is generated by using the gap in the water level between the water outside and inside the embankment. All tidal power plant in Korea were being operated by import of turn-key from abroad. The know-how and technology which are the most important to build predictive control system has become increasingly difficult to obtain from advanced countries because most of them avoid to transfer, which the domestic development of the control system is needed. In this paper, a study on start stop system at water turbine-generator for tidal power plant at the beginning of development was presented. For improvement the efficiency and develope of core technology of the start stop system, the technique and characteristics of tidal power, modeling, maximum generation calculation method, and optimal control of joint control system in Sihwa tidal power plant were studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.423-426
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• 1998

Piezoresistive pressure sensors have fabricated using electrochemical etch-stop technique. Si diaphragm having thickness of n-epi. layer was fabricated and used to detect pressure range from 0 to 1 kg/$\textrm{cm}^2$. Piezoresistors were diffused 3${\times}$10$\^$18/ cm$\^$-3/ and placed at diaphragm edge for maximum pressure detection. The characteristics of electrochemical etch-stop in TMAH/lPA/pyrazine solution were also discussed. I-V curves of n and p-type Si in TMAH/lPA/pyrazine solution were obtained. Etching rate is highest at optimum etching condition, TMAH 25wt.%/IPA 17vo1.%/pyrazine 0.1/100m1, thus the elapsed time of etch-stop was reduced.

• Transactions of the Korean Society of Automotive Engineers
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• v.10 no.5
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• pp.206-213
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• 2002

This paper proposes a vehicle trajectory prediction method for application to vehicle-to-vehicle distance control. This method is based on 2-dimensional kinematics and a Kalman filter has been used to estimate acceleration of the object vehicle. The simulation results using the proposed control method show that the relative distance characteristics can be improved via the trajectory prediction method compared to the customary vehicle stop and go cruise control systems which makes the vehicle remain at a safe distance from a preceding vehicle according to the driver's preference, automatically slow down and come to a full stop behind a preceding vehicle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.557-560
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• 2000

Combination of SDB(Si-wafer Direct Bonding) and electrochemical etch-stop in TMAH anisotropic etchant can be used to create a variety of MEMS(Micro Electro Mechanical System). Especially, fabrication of SDB SOI structures using electrochemical etch-stop is accurate method to fabrication of 3D(three-dimensional) microstructures. This paper describes on the fabrication of SDB SOI structures with sealed cavity for MEMS applications and thickness control of active layer on the SDB SOI structure by electrochemical etch-stop. The flatness of fabricated SDB SOI structure is very uniform and can be improved by addition of TMAH to IPA and pyrazine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.583-586
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• 2000

The non-selective method by polishing after grinding was used widely to thinning of SDB SOI structures. This method was very difficult to thickness control of thin film, and it was dependent on equipments. However electrochemical etch-stop, one of the selective methods, was able to accurately thickness control and etch equipment was very simple. Therefore, this paper described with the effect of leakage current and electrodes on electrochemical etch-stop. Consequentially, PP(passivation potential) was changed according to the kinds of contact and contact sizes, but OCP(open current potential) was not change with range of -1.5~-1.3V

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.579-582
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• 2000

This paper described on the fabrication of SOI(Si-on-insulator) structures with buried cavities by SDB technology and eletrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annaling(100$0^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated the SDB SOI structure with buried cavities as well as an accurate control and a good flatness.