Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.07a
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- Pages.557-560
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- 2000
Fabrication of SDB SOI structure with sealed cavity
Cavity를 갖는 SDB SOI 구조의 제작
Abstract
Combination of SDB(Si-wafer Direct Bonding) and electrochemical etch-stop in TMAH anisotropic etchant can be used to create a variety of MEMS(Micro Electro Mechanical System). Especially, fabrication of SDB SOI structures using electrochemical etch-stop is accurate method to fabrication of 3D(three-dimensional) microstructures. This paper describes on the fabrication of SDB SOI structures with sealed cavity for MEMS applications and thickness control of active layer on the SDB SOI structure by electrochemical etch-stop. The flatness of fabricated SDB SOI structure is very uniform and can be improved by addition of TMAH to IPA and pyrazine.