• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.324-327
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• 2014

Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.60-63
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• 1993

We have prepared n-CdS/p-InP hetero- junction solar cells by thermal evaporation. The efficiency under the optium conditions without the grid line contact was 7.3%, and the solar cell having glid line contact with SiO AR coating was the open circuit voltage of 0.71V, the short circuit voltage current density of 15mA/cm$^2$, the fill factor of 0.73, and the efficiency of 11.5%. As result of photoresponse in 400-1000nm wavelength the cutoff of n-CdS/p-InP solar at 500nm results from absorption by the CdS \"window\" and the cutoff at 930 nm result from absorption by the InP.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.21-25
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• 2007

A two-dimensional TCAD MEDICI simulator was used to examine the voltage transfer characteristics, on-off switching properties and latch-up of a CMOS inverter as a function of the n-channel length and doping levels. The channel in a LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of a CMOS inverter. The digital logic levels of the output and input voltages were analyzed from the transfer curves and circuit operation. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.774-779
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• 1988

The homo and hetero-junction diodes were fabricated using BP-Si structure. After removal of Si substrates, schottky diodes were fabricated on the BP bulk. The electrical properties of the diode were examined through current-voltage characteristics curve. The schottky diode with Sb electrode has a cut-in voltage of 0.33V. This value is almost equal to that of the typical schottky diodes. The breakdown voltage of the schottky diode is 30V. When BP was used for photo cell as a window, the conversion efficiency improved from 6.5% to 8.3%, and optical transmissivity of BP invreased in short wavelength region.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.174-180
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• 2000

Y-TZP/mullite composites were prepared by the infiltration of Y-TZP precursor into partially reaction-sintered mullite. The addition of Y-TZP(~7.2 wt%) increased the bend strength(207 MPa), fracture toughness(4.6MPa.m1/2) and Vickers microhardness(853kg/$\textrm{mm}^2$) of the uninfiltrated mullite sintered at 162$0^{\circ}C$ for 10h by more than 75, 70 and 105%, respectively. Residual alumina-rich glass was observed at a mullite/mullite junction, due to the mullitization reaction of silica melt with crystalline $\alpha$-Al2O3 during a final sintering. Although ZrO2 inclusions improved the final sintered density of mullite they did not effectively prevent its grain growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.67-72
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• 1992

In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu/CdS films were deposited on transparent ITO glass. We heat-treated to diffuse Cu atoms to CdS fi1m at 350[$^{\circ}C$]. With deposited Cu-doped CdS film. We investigated the electrical. optical. X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.484.1-484.1
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• 2014

Bulk hetero junction (BHJ) polymer solar cells (PSCs) are one of the most promising fields as alternative energy source. Especially, the development of new p-type conjugated polymer is one of the main issues to get core technology. In this study, a series of varied ratio of 3,6-carbazole in poly[9-(heptadecan-9-yl)-9H-carbazole-2,7-diyl-alt-(5,6-bis-(octyloxy)-4,7-di(thiophen-2-yl)benzo-[1,2,5]-thia-diazole)-5,5-diyl] were designed and synthesized. These polymers have good solubility and film formability than PCDTBT which is well known promising material. Investigation of the photovoltaic properties of these new polymers indicated that polymer with 2% of 3,6-carbazole provided higher PCE (3.8% to 4.9%) with enhanced JSC, FF, VOC. We found origin of this improvement using several methods, one of which is reduced bimolecular recombination in polymer.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1572-1574
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• 2002

In this paper, we discuss the electrical properties of self-assembled (2'-amino-4,4-di(ethynylp henyl)-5'-nitro-1-(thioacetyl)benzene), which has been well known as a conducting molecule having possible application to molecular level NDR device. The phenomenon of negative differential resi(NDR) is characterized by decreasing current th a junction at increasing voltage, also fabricatio MIM-type molecular electronic device and the Molecular Level Using Scanning Tunneling Microscopy.

• Progress in Superconductivity
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• v.3 no.2
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• pp.168-171
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• 2002

We have demonstrated ramp-edge Josephson junctions using high temperature superconductors without depositing artificial barriers. We fabricated a surface barrier formed naturally during an ion beam etching process and the annealing under the oxygen atmosphere. The experimental results imply that the barrier natures such as the resistivity are varied by the annealing conditions and the ion milling conditions including the beam voltages. Thus, the ann eating and etching conditions should be optimized to obtain excellent junction properties. In optimizing the fabricating factors, the interface-controlled junctions showed resistively shunted junctions like current-voltage characteristics and an excellent uniformity. These junctions exhibited a spread ($1\sigma$) of $I_{c}$ is 10% fur chips containing 7 junctions at 50K.K.

• Progress in Superconductivity
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• v.4 no.1
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• pp.14-18
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• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.