Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1993.11a
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- Pages.60-63
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- 1993
A Properties of n-CdS/p-InP Heterojunction Diodes
n-CdS/P-InP 이종접합 다이오드 특성
Abstract
We have prepared n-CdS/p-InP hetero- junction solar cells by thermal evaporation. The efficiency under the optium conditions without the grid line contact was 7.3%, and the solar cell having glid line contact with SiO AR coating was the open circuit voltage of 0.71V, the short circuit voltage current density of 15mA/cm
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