• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.124-127
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• 2005

It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene$(C_60)$ as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was $2.65\%$ at illumination intensity $100\;mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• 한국광학회지
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• 제8권6호
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• pp.492-499
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• 1997

굽은 비선형 도파로를 이용한 완전 광 스위치와 굽은 비선형 Y 분기각을 갖는 도파로를 이용한 완전 광 논리 연산소자를 제안하였다. 제안된 완전 광 스위치와 완전 광 논리 연산소자는 굽은 비선형 도파로를 따라가는 비선형파의 전파에 기초를 두고 있다. 빔의 전파특성은 도파로의 비선형성과 입력 파워, 도파로의 굽은 각도 등의 파라미터에 의해 좌우되므로 파라미터를 변화시켜 가면서 파워의 출력 특성을 계산해 보았다. 또한, 비선형 물질로 빠져 나오는 파워를 다양한 위치의 검출기에서 계산함으로써 특정한 검출기의 위치에서 가장 이상적인 디지털 스위칭 특성을 찾았고 도파로 끝과 비선형 물질로 빠져 나오는 파워의 비율에 의해 다양한 논리 함수(AND, OR, XOR)를 구현해 보았다.

• 조명전기설비학회논문지
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• 제27권5호
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• pp.67-73
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• 2013

The conversion of solar radiation into electrical energy by Photo-Voltaic (PV) effect is a very promising technology, being clean, silent and reliable, with very small maintenance costs and small ecological impact. The output power produced by the PV panels depends strongly on the incident light radiation. The continuous modification of the sun-earth relative position determines a continuously changing of incident radiation on a fixed PV panel. The point of maximum received energy is reached when the direction of solar radiation is perpendicular on the panel surface. Thus an increase of the output energy of a given PV panel can be obtained by mounting the panel on a solar tracking device that follows the sun trajectory. Tracking systems that have two axes and follow the sun closely at all times during the day are currently the most popular. This paper presents research conducted into the performance of Solar tracking system with photosensors. The results show that an optimized dual-axis tracking system with photosensor performance and analysis. From the obtained results, it is seen that the sun tracking system improves the energy and energy efficiency of the PV panel.ti-junction CPV module promises to accelerate growth in photovoltaic power generation.

• 한국전기전자재료학회논문지
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• 제28권4호
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• pp.213-217
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• 2015

Device model parameters are very important for accurate estimation of electrical performances in devices, integrated circuits and their systems. There are a large number of methods for extraction of model parameters in power MOSFETs. For high efficiency, design is important considerations of a power MOSFET with high-voltage applications in consumer electronics. Meanwhile, it was proposed that the efficiency of a MOSFET can be enhanced by conducting JFET region double implant to reduce the On-resistance of the transistor. This paper reports the effects of JFET region double implant on the electrical properties and the decreasing On-resistance of the MOSFET. Experimental results show that the 1st JFET region implant diffuse can enhance the On-resistance by decreasing the ion concentration due to the surface and reduce the On-resistance by implanting the 2nd Phosphorus to the surface JFET region.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.390-396
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• 2003

As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

• 센서학회지
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• 제24권5호
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• pp.353-357
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• 2015

A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2009년도 춘계학술대회 논문집
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• pp.384-387
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• 2009

There is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. Many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation (PWM) converter. Especially, the phase shift full bridge zero voltage switching PWM techniques are thought must desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

• 전력전자학회논문지
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• 제19권4호
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• pp.327-331
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• 2014

LED(Light Emitting Diode) is a semiconductor device utilizing electroluminescent effect is a phenomenon in which a type of P-N junction diode, the light of short wavelength which a voltage is applied in the forward direction is released. LED is advantageous in reducing the energy as environmentally materials that can greatly reduce the carbon emissions, recent it has attracted attention IT(Information Technology) and GT(Green Technology) industry. In addition, there are advantages long life, high efficiency, and excellent response speed, LED have come into the spotlight as the illumination means to replace the existing fluorescent light and incandescent light bulb. When connecting to MR16 electronic transformer for existing LED driver circuit, due to malfunction of the dimmer and the electronic transformer, flicker occurs and linear dimming is not possible. Therefore, in this paper, we suggest an LED drive circuit there is no flicker with the corresponding dimming MR16 electronic transformer. Further, we explain the principles of the LED current control technique and the principle of the drive circuit of the LED, in order to validate the proposed circuit through prototyping and simulation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.268-268
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• 2010

The performance dependence of the P3HT:PCBM based bulk hetero-junction (BHJ) organic solar cells (OSCs) on the electrical and the optical properties of amorphous InZnSnO (a-IZTO) electrodes as a difference in film thicknesses are examined. With an increasing of the a-IZTO thickness, the series resistance ($R_{series}$) of the OSCs is reduced because of the reduction of sheet resistance ($R_{sheet}$) of a-IZTO electrodes. Additionally, It was found that the photocurrent density ($J_{sc}$) and the fill factor (FF) in OSCs are mainly affected by the electrical conductivity of the a-IZTO anode films rather than the optical transparency at thinner a-IZTO films. On the other hand, despite the much lower $R_{series}$ comes from thicker anode films, the dominant factor affecting the $J_{sc}$ became average optical transmittance of a-IZTO electrodes as well as power conversion efficiency (PCE) in same device configuration due to the thick anode films had as sufficiently low $R_{sheet}$ to extract the hole carrier from the active material.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.228-231
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• 2006

This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.