• Title/Summary/Keyword: Junction depth

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Pulsed Ferrite Magnetic Field Generator for Through-the-earth Communication Systems for Disaster Situation in Mines

  • Bae, Seok;Hong, Yang-Ki;Lee, Jaejin;Park, Jihoon;Jalli, Jeevan;Abo, Gavin S.;Kwon, Hyuck M.;Jayasooriya, Chandana K.K.
    • Journal of Magnetics
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    • v.18 no.1
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    • pp.43-49
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    • 2013
  • A pulsed ferrite magnetic field generator (FMFG) was designed for the use in the 1000 m long through-the-earth (TTE) communication system for mining disaster situations. To miniaturize the TTE system, a ferrite core having 10,000 of permeability was used for the FMFG. Attenuation of the magnetic field intensity from the FMFG (200-turn and 0.18 m diameter) was calculated to be 89.95 dB at 1000 m depth soil having 0.1 S/m of conductivity. This attenuation was lower than 151.13 dB attenuation of 1 kHz electromagnetic wave at the same conditions. Therefore, the magnetic-field was found to be desirable as a signal carrier source for TTE communications as compared to the electromagnetic wave. The designed FMFG generates the magnetic field intensity of $1{\times}10^{-10}$ Tesla at 1000 m depth. This magnetic field is detectable by compact magnetic sensors such as flux gate or magnetic tunneling junction sensor. Therefore, the miniature FMFG TTE communication system can replace the conventional electromagnetic wave carrier type TTE system and allow reliable signal transmission between rescuer and trapped miners.

Insulation Performance and Heating and Cooling Energy Consumption depending on the Window Reveal Depth in External Wall Insulation (외단열 벽체에서 창호 설치 위치에 따른 단열성능 및 냉난방 에너지 소비량)

  • Rhee, Kyu-Nam;Jung, Gun-Joo
    • Journal of the Architectural Institute of Korea Structure & Construction
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    • v.33 no.12
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    • pp.91-98
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    • 2017
  • In this study, the effect of window installation position in the residential building with the external insulation was numerically investigated in terms of insulation performance and heating/cooling energy consumption. For different window positions, 2-D heat transfer simulation was conducted to deduce the linear thermal transmittance, which was inputted to the dynamic energy simulation in order to analyze heating/cooling energy consumption. Simulation results showed that the linear thermal transmittance ranges from 0.05 W/mK to 0.7 W/mK, and is reduced as the window is installed near the external finish line. Indoor surface temperature and TDR analysis showed that the condensation risk is the lowest when the window is installed at the middle of the insulation and wall structure. It was also found that the window installation near the external finish can reduce the annual heating/cooling energy consumption by 12~16%, compared with the window installation near the interior finish. Although the window installation near the external finish can achieve the lowest heating/cooling energy consumption, it might lead to increased condensation risks unless additional insulation is applied. Thus, it can be concluded that the window should be installed near the insulation-wall structure junction, in consideration of the overall performance including energy consumption, condensation prevention and constructability.

Network Modeling of Paddy Irrigation System using ArcHydro GIS (ArcHydro를 이용한 GIS기반의 관개시스템 네트워크 모델링)

  • Park, Geun-Ae;Park, Min-Ji;Jang, Jung-Seok;Kim, Seong-Joon
    • Proceedings of the Korea Water Resources Association Conference
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    • 2006.05a
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    • pp.323-327
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    • 2006
  • During the past decades in South Korea, there have been several projects to reduce water demand and save water for paddy irrigation system by automation. This is called as intensive water management system by telemetering of paddy ponding depth and canal water level and telecontrol of water supply facilities. This study suggests a method of constructing topology-based irrigation network system using GIS tools. For the network modeling, a typical agricultural watershed included reservoirs, irrigation and drainage canals, pumping stations was selected. ArcHydro tools composed of edge, junction, waterbody and watershed were used to construct hydro-network. ArcHydro Model was then designed and the network was successfully built using the HydroID. Visualization using ArcHydro tools could display table property of each object. ArcHydro Model was linked to Agricultural Water Demamd and Supply Estimation System (AWDS) which developed by Korea Rural Community and Agriculture Corporation (KRC) to extract information of the study area. And menu of supply facilities information, demand analysis and supply analysis constructed for information acquisition and visualization of acquired informations.

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Breakdown Voltage Characteristics of LDMOST with External Field Ring (외부 전계 링을 갖는 LDMOST의 항복전압 특성)

  • Oh Dong-joo;Yeom Kee-soo
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.8
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    • pp.1719-1724
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    • 2004
  • In this paper, we have proposed a new structure of LDMOST, which has been expected as a next generation RF power device, to improve the BV(Breakdown Voltage) characteristics. The proposed structure, named external field ring, is formed around a drift region by the three dimensional structure. The external field ring relieves the electric field in the drift region and improves the BV characteristics. By the three dimensional TCAD simulations, it was found that the BV of LDMOST was increased by the increase of the junction depth and doping concentration of the external field ring. Therefore, the BV characteristics of the LDMOST can be remarkably improved by addition of external field ring using an existing p+ sinker process.

A Study on the Channel Length and the Channel Punchthrough of Self-Aligned DMOS Transistor (자기정렬 DMOS 트랜지스터의 채널 길이와 채널 Punchthrough에 관한 고찰)

  • Kim, Jong-Oh;Kim, Jin-Hyoung;Choi, Jong-Su;Yoob, Han-Sub
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1286-1293
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    • 1988
  • A general closed form expression for the channel length of the self-aligned double-diffused MOS transistor is obtained from the 2-dimensional Gaussian doping profile. The proposed model in this paper is composed of the doping concentration of the substrate, the final surface doping concentration and the vertical junction depth of the each double-diffused region. The calculated channel length is in good agreement with the experimental results. Also, the optimum channel structure for the prevention of the channel puncthrough is obtained by the averaged doping concentration in the channel region. A correspondence between the results of device simulation of channel punchthrough and the estimations of simplified model is confirmed.

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Two-Bit/Cell NFGM Devices for High-Density NOR Flash Memory

  • Lee, Jong-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.11-20
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    • 2008
  • The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

Characterization of YBCO do SQUID fabricated on sapphire substrate for biomagnetic applications (생체자기 응용을 위한 사파이어 기판 위에 제작된 YBCO dc SQUID 의 특성)

  • Lim, Hae-Ryong;Kim, In-Seon;Kim, Dong-Ho;Park, Yong-Ki;Park, Jong-Chul
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.155-159
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    • 2000
  • YBCO step-edge dc SQUID magnetometers on sapphire substrates have been fabricated. CeO2 buffer layer and YBCO films were deposited in situ on the low angle (${\sim}$35$^{\circ}$) steps formed on the sapphire substrates. Typical 5-${\mu}$m-wide junction has R$_n$ of 5 ${\omega}$ and I$_c$ of 50 ${\mu}$A with large I$_c$R$_n$ product of 250 ${\mu}$V at 77K. According to applied bias current, depth of voltage modulation was changed and maximum voltage was measured 16 ${\mu}$V. Field noise of do SQUID was measured 100${\sim}$300 fT/${\surd}^{Hz}$ in the 1 $^{kHz}$, and about 1.5 pT/${\surd}^{Hz}$ in the 1/f region. For ac bias reversal method, field noise was decreased in the 1/f region. The QRS peak of magnetocardiogram was measured 50 pT in the magnetically shielded room.

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Device and Circuit Performance Issues with Deeply Scaled High-K MOS Transistors

  • Rao, V. Ramgopal;Mohapatra, Nihar R.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.1
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    • pp.52-62
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    • 2004
  • In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

Comparison of Two Step LEEP and Cold Conisation For Cervical Intraepithelial Lesions to Decrease Positive Surgical Margins

  • Senol, Taylan;Polat, Mesut;Ozkaya, Enis;Karateke, Ates
    • Asian Pacific Journal of Cancer Prevention
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    • v.17 no.7
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    • pp.3317-3320
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    • 2016
  • Purpose: To assess the success rates of two step loop electrosurgical excision procedure (LEEP) compared with conventional cold conization procedures for decreasing positive surgical margins. Materials and Methods: This study was conducted on 70 patients who underwent colposcopic evaluation in Zeynep Kamil Women and Children's Health Training and Research Hospital between 2013-2015 with indications of CIN 2/3 or persistent CIN 1 for more than 2 years. The study included age matched groups of patients with similar histopathololical lesions who underwent cold conization (n=40) or LEEP (N=30). Results: Comparison of tissue characteristics between the two groups revealed significantly higher deepest depth and lower volume of tissue removed by the two step LEEP. Ectocervical positivity rate was similar between groups (1/39 versus 0/29, P>0.05), while endocervical surgical margin positivity rate was significantly higher in the cold conization group (9/39 versus 0/29, P<0.05). Surgical margin positive cases were significantly older than the cases with negative margins (P<0.05). Conclusions: Two step LEEP made it easier to reach the squamocolumnar junction in the endocervical region with lower blood loss and applicability in office settings. Our study suggests to use two step approach in cases with high grade and glandular CIN.

SCANNING ELECTRON MICROSCOPIC STUDY OF LINK PLUS PIN IN DENTIN (상아질에 장착된 Link plus pin의 주사전자현미경적 연구)

  • Um, Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.14 no.1
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    • pp.205-210
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    • 1989
  • The purpose of this study was to observe the minim pins of Link plus (which has buttress thread and shoulder stop design) inserted into dentin and the dentin surrounding pin. The gingival walls of class II cavity were prepared with high speed handpiece in molar teeth not elapsed time after teeth were extracted, and pinhole of 2mm in depth was positioned about 1 mm to the dentinoenamel junction and minim pin was inserted with wrench. After initial examination of the specimens, the specimens were sectioned longitudinally and horizontally to the pins with carborundum disc and low speed diamond saw (Isomet Buehler Ltd) All specimens were coated Au of 250-300${\AA}$ in thickness with Ion Sputter JFC 100 and observed under Scanning Electron Microscope (JSM-35) The following results were obtained. 1. The shoulder stop was seated on the enterance of pinhole in gingival wall, and there were the irregular space between the pin and dentin at the enterance to the pin hole and flakes of dentin lifting from the dentin floor. 2. In case of section to pin horizontally or longitudinally, the dentin debris were observed in gap between pin and dentin, and small cracks were often seen in the dentin surrounding minim pins.

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