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Breakdown Voltage Characteristics of LDMOST with External Field Ring  

Oh Dong-joo (한밭대학교 정보통신전문대학원)
Yeom Kee-soo (한밭대학교 정보통신컴퓨터공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.8, no.8, 2004 , pp. 1719-1724 More about this Journal
Abstract
In this paper, we have proposed a new structure of LDMOST, which has been expected as a next generation RF power device, to improve the BV(Breakdown Voltage) characteristics. The proposed structure, named external field ring, is formed around a drift region by the three dimensional structure. The external field ring relieves the electric field in the drift region and improves the BV characteristics. By the three dimensional TCAD simulations, it was found that the BV of LDMOST was increased by the increase of the junction depth and doping concentration of the external field ring. Therefore, the BV characteristics of the LDMOST can be remarkably improved by addition of external field ring using an existing p+ sinker process.
Keywords
LDMOST; breakdown voltage; power amplifier; RF; TCAD;
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