• The Korean Journal of Pain
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• v.13 no.1
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• pp.111-114
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• 2000

Pain around the posterior iliac crest area is usually attributed to disorders of the lower lumbar or lumbosacral spine. However, low back pain arising from the thoracolumbar region is common and it is very similar to low back pain of lumbosacral origin. Low back pain of thoracolumbar origin is clinically distinguished from other nonspecific low back pain syndrome. It is characterized by symptoms localized at one posterior iliac crest innervated by posterior branch of $T_{12}$ spinal nerve. Patients never complain of spontaneous pain at the thoracolumbar junction. Only localized tenderness over involved segments of thoracolumbar junction can be noted. We report two cases of posterior iliac crest pain of thoracolumbar origin which was relieved by the treatment on the thoracolumbar junction.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1813-1817
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• 2007

The present work presents plastic limit load solutions for piping branch junctions with local wall-thinning, based on detailed three-dimensional (3-D) and small strain FE limit analyses using elastic-perfectly plastic materials. Three types of loading are considered; internal pressure, in-plane bending on the branch pipe and in-plane bending on the run pipe. The wall-tinning located on variable area of the piping branch junction is considered. A wide range of piping branch junction and wall-thinning geometries are considered. Comparison of the proposed solutions with FE results shows good agreement

• Progress in Superconductivity
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• v.4 no.1
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• pp.59-63
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• 2002

10-V Josephson junction array arranged in 8 parallel stripline paths was fabricated using self-aligning and reactive ion etching techniques. These techniques were introduced in detail with aim of obtaining high-quality junctions. The array has 18,184 Josephson junctions with the area of $12\mu\textrm{m}$$\times$$38\mu\textrm{m}$. The gap voltage and minimum critical current density were about 2.7 ㎷ and ／$23 A\textrm{cm}^2$, respectively. And the critical current density and leakage current at 5 volt were about 27 $A／\textrm{cm}^2$ and $5\mu\textrm{A}$, respectively When operated in the frequency range of 76-88 ㎓, the away generated constant voltage steps up to 14-19 V. The step size near 10-V was more than 7 $\mu\textrm{A}$.

• Progress in Superconductivity
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• v.4 no.1
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• pp.64-67
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• 2002

The attenuation of millimeter waves (70-100 ㎓) propagating along Josephson Junction stripline had been measured by pattern recognition near gap voltage and proximity current bump. Test series arrays of 2000, 3000, and 4000 Josephson junctions with the area of $12\mu\textrm{m}$$\times$ $38\mu\textrm{m}$ had two sub-arrays with 50 Junctions at both ends. The arrays were fabricated with and without applying a plasma nitridation process to Nb ground plane. The effects of a nitridationprocess measured by the pattern recognition near gap voltage and proximity current bump were about 1.3-1.7 ㏈ and 1.6-1.8 ㏈, respectively. This means that the last sub-arrays with a nitridation process receive 26-34% more power than those without a nitridation process.

• Journal of IKEEE
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• v.19 no.2
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• pp.232-236
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• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

• The Korean Journal of Zoology
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• v.39 no.2
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• pp.223-230
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• 1996

Fine structure of the neuromuscular junction in the venomous organ of the spider, Agelena li'mbutq, was studied using high magnification electron microscope. The motor nerve endings at neuromuscular contact area composed of neurons and neuroslial cells were located between musculature and extracellular sheath of the venom gBand. At the synaptic contact between a motor axon and a muscle fiber in the musculature, spherical synaptic vesicles were prominent in the nerve terminal. The sarcoplasm beneath the neuromuscular synapse has a granular appearance and lacks mvofilaments. And the main axon gives off a branch between the muscle fibers. The synaptic regions of this organ are located close to the myofilaments unlike to other chelicerate classes. Moreover the postsvnaptic complex of vesicles and membrane invasinations present in other synaptic legions are absent from these legions in this venomous organ.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.793-798
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• 2016

In this work, the memory window characteristics of vertical nanowire device with asymmetric source and drain was analyzed using bipolar junction transistor mode for 1T-DRAM application. A gate-all-around (GAA) MOSFET with higher doping concentration in the drain region than in the source region was used. The shape of GAA MOSFET was a tapered vertical structure that the source area is larger than the drain area. From hysteresis curves using bipolar junction mode, the memory windows were 1.08V in the forward mode and 0.16V in the reverse mode, respectively. We observed that the latch-up point was larger in the forward mode than in the reverse mode by 0.34V. To confirm the measurement results, the device simulation has been performed and the simulation results were consistent in the measurement ones. We knew that the device structure with higher doping concentration in the drain region was desirable for the 1T-DRAM using bipolar junction mode.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.62-70
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• 1984

N+NPP+ HLEBSF (high low emitter back surface field) solar cells which have N+N high low junction in the emitter as well as N+PP+ BSF cells were designed and fabricated by using <111> oriented P type Si wafers with the resistivity of 10$\Omega$/$\textrm{cm}^2$ and the thickness of 13-15 mil. Physical parameters (impurity concentration, thickness) at each region of N+PP+ and N+NPP+ cell were made equally through same masks and simultaneous process except N region of HLEBSF cell to investigate the high low emitter junction effect for efficiency improvement. Under the light intensity of 100 mW/$\textrm{cm}^2$, total area (active area) conversion efficiency were typically 10.94% (12.16%) for N+PP+ BSF cells and 12.07% (13.41%) for N+N PP+ cells. Efficiency improvement of N+NPP+ cell which has high low emitter Junction structure is resulted from the suppression of emitter recombination current and the increasement of open circuit voltage (Voc) and short circuit current (Ish) by removing heavy doping effects occurring in N+ emitter region.

• KIEAE Journal
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• v.17 no.3
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• pp.15-21
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• 2017

Purpose: "Building energy design standard" is used to limit the thermal transmittance of building in Korea. However, it only covers the insulation standard for each appropriate elements of a building, not the thermal performance of Junction thermal bridge of windows and doors installed in wall. Therefore in this study, we have evaluated the thermal performance of Junction thermal bridge depending on installation method and position of windows and provide it as design data. Method: We analyzed heat transfer of 4-Track sliding window and tilt & turn triple glazed window that are placed in the first class category on window energy efficiency rating using Window 7.4 and Therm 7.4. Result : First, linear thermal transmittance of 4-Track sliding window differs by 2.2 times or more depending of installation method and location. It is higher than the linear thermal transmittance, 0.01W/mK, proposed by Passivhaus. Second, linear thermal transmittance of Tilt & turn triple glazed window differs by 7.7 times or more depending of installation method and location. The average linear thermal transmittance was less than 0.01W /mK when windows were installed on the internal wall insulation by the fixed hardware attachment method. Third, the thermal losses of a window caused by a junction thermal bridge are inversely proportional to the window area and converge gradually as the area increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.594-599
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• 2014

The heat dissipation conditions of high-power 5 watt LEDs-based searchlight modules were optimized with varying LED bar'shape, materials, and ambient temperature. The LED junction temperature was estimated by using Computational Fluid Dynamics simulation. The optimal heat dissipation conditions were found as follows; LED bar' shape: L=80 mm, W=4 mm, t=10 mm, copper material, LED junction temperature of $116.6^{\circ}C$, ambient temperature of $50^{\circ}C$, total mass of 184 g, and shadowing area of $320mm^2$. The difference between the junction temperatures of our fabricated and simulated LEDs-based searchlight modules is about $3^{\circ}C$, which confirms the validity of our thermal simulation results.