• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.378-381
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• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.101-104
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• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• Magazine of the Korea Concrete Institute
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• v.24 no.2
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• pp.27-31
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• 2012

• Magazine of the Korea Concrete Institute
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• v.27 no.1
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• pp.53-56
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• 2015

• Magazine of the Korea Concrete Institute
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• v.25 no.3
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• pp.29-33
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• 2013

• Magazine of RCR
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• v.16 no.1
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• pp.23-25
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• 2021

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.3
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• pp.221-228
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• 2011

The large-area crystallization of amorphous silicon thin films on glass backplanes is one of the key technologies in the manufacture of flat-panel displays. Joule-heating induced crystallization (JIC) is a recently introduced crystallization technology. It is considered a highly promising technique for fabricating OLEDs, because the film of amorphous silicon on glass can be crystallized in tens of microseconds, minimizing thermal and structural damage to the glass. In this study, we theoretically and experimentally investigated the temperature variation during the phase transformation. The critical temperatures for crystallization were determined for both solid-solid and solid-liquidsolid transitions, by carrying out in-situ temperature measurements and numerical analysis of the JIC.

• Nuclear Engineering and Technology
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• v.52 no.8
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• pp.1732-1741
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• 2020

The structural integrity of welded joints in the reactor pressure vessel (RPV) is directly related to the safety of nuclear power plants. The RPV is made from SA508-III steel in a pressurized water reactor. In this study, we investigated the effects of temperature on the tensile and fracture toughness properties of Chinese SA508-III welded joint in different sampling areas in order to provide reference data for structural integrity assessments of RPVs. The specimens used in tensile and fracture toughness tests were fabricated from the base metal (BM), weld metal (WM), and the heat-affected zone (HAZ) in the welded joint. The representative testing temperatures included the ambient temperature (20 ℃), upper shelf temperature (100 ℃), and service temperature (320 ℃). The results showed that temperature greatly affected the fracture toughness (JIC) values for the SA508-III welded joint. The JIC values for BM and HAZ both decreased remarkably from 20 ℃ to 320 ℃. The fracture morphologies showed that the BM and HAZ in the welded joint exhibited fully ductile fracture at 20 ℃, whereas partial cleavage fracture was mixed in ductile fracture mode at 100 ℃ and 320 ℃. The WM exhibited the ductile and cleavage fracture mixed mode at various temperatures, and the JIC values showed slight changes.

• Magazine of the Korea Concrete Institute
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• v.26 no.2
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• pp.24-28
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• 2014

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.3
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• pp.936-943
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• 1991