• Kyungpook Mathematical Journal
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• 제60권1호
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• pp.1-20
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• 2020

A simple but elegant result of Rival states that every sublattice L of a finite distributive lattice 𝒫 can be constructed from 𝒫 by removing a particular family 𝒥_L of its irreducible intervals. Applying this in the case that 𝒫 is a product of a finite set 𝒞 of chains, we get a one-to-one correspondence L ↦ 𝒟_𝒫(L) between the sublattices of 𝒫 and the preorders spanned by a canonical sublattice 𝒞^⋄ of 𝒫. We then show that L is a tight sublattice of the product of chains 𝒫 if and only if 𝒟_𝒫(L) is asymmetric. This yields a one-to-one correspondence between the tight sublattices of 𝒫 and the posets spanned by its poset J(𝒫) of non-zero join-irreducible elements. With this we recover and extend, among other classical results, the correspondence derived from results of Birkhoff and Dilworth, between the tight embeddings of a finite distributive lattice L into products of chains, and the chain decompositions of its poset J(L) of non-zero join-irreducible elements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제28회 학술발표회 초록집
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• pp.38-38
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• 2005

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.857-860
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• 2004

Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

• 한국초전도ㆍ저온공학회논문지
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• 제21권3호
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• pp.13-17
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• 2019

We investigate the effect of thermal annealing on $MgB_2$ thin films with thicknesses of 400 and 800 nm, irradiated by 350 keV C-ions with a dose of $1{\times}10^{15}atoms/cm^2$. Irradiation by low-energy C-ions produces atomic lattice displacement in $MgB_2$ thin films, improving magnetic field performance of critical current density ($J_c$) while reducing the superconducting transition temperature ($T_c$). Interestingly, the lattice displacement and the $T_c$ are gradually restored to the original values with increasing thermal annealing temperature. In addition, the magnetic field dependence of $J_c$ also returns to that of the pristine state together with the restoration of $T_c$. Because $J_c$(H) is sensitive to the type and density of the disorder, i.e. vortex pinning, the recovery of $J_c$(H) in irradiated $MgB_2$ thin films by thermal annealing indicates that low-energy C-ion irradiation on $MgB_2$ thin films primarily causes lattice displacement. These results provide new insights into the application of low-energy irradiation in strategically engineering critical properties of superconductors.

• East Asian mathematical journal
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• 제9권2호
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• pp.275-282
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• 1993

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2004년도 춘계 학술대회논문집
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• pp.113-118
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• 2004

This paper presents a two-dimensional edge tone to predict the frequency characteristics of the discrete oscillations of a jet-edge feedback cycle by the finite difference lattice Boltzmann method (FDLBM). We use a new lattice BGK compressible fluid model that has an additional term and allow larger time increment comparing the conventional FDLBM, and also use a boundary fitted coordinates. The jet is chosen long enough in order to guarantee the parabolic velocity profile of the jet at the outlet, and the edge consists of a wedge with an angle of $\alpha=23^0$. At a stand-off distance $\omega$, the edge is inserted along the centreline of the jet, and a sinuous instability wave with real frequency f is assumed to be created in the vicinity of the nozzle and th propagate towards the downstream. We have succeeded in capturing very small pressure fluctuations result from periodically oscillation of jet around the edge. That pressure fluctuations propagate with the sound speed. Its interaction with the wedge produces an irrotational feedback field which, near the nozzle exit, is a periodic transverse flow producing the singularities at the nozzle lips. The lattice BGK model for compressible fluids is shown to be one of powerful tool for computing sound generation and propagation for a wide range of flows.

• Journal of Magnetics
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• 제13권2호
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• pp.61-64
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• 2008

We studied the effect of the variation of the lattice constant on the electrical properties of $SrRuO_3$ thin films. In order to obtain films with different volumes, we varied the substrate temperature and oxygen pressure during the growth of the films on $SrTiO_3$ (001) substrates. The films were grown using a pulsed laser deposition method. The X-ray diffraction patterns of the grown films at low temperature and low oxygen pressure indicated the elongation of the c-axis lattice constant compared to that of the films grown at a higher temperature and higher oxygen pressure. The in-plane strain states are maintained for all of the films, implying the expansion of the unit-cell volume by the oxygen vacancies. The variation of the electrical resistance reflects the temperature dependence of the resistivity of the metal, with a ferromagnetic transition temperature inferred form the cusp of the curve being observed in the range from 110 K to 150 K. As the c-axis lattice constant decreases, the transition temperature linearly increases.

• 대한수학회지
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• 제59권6호
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• pp.1047-1065
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• 2022

For two dimensional lattices, a Gaussian basis achieves all two successive minima. For dimension larger than two, constructing a pairwise Gaussian basis is useful to compute short vectors of the lattice. For three dimensional lattices, Semaev showed that one can convert a pairwise Gaussian basis to a basis achieving all three successive minima by one simple reduction. A pairwise Gaussian basis can be obtained from a given basis by executing Gauss algorithm for each pair of basis vectors repeatedly until it returns a pairwise Gaussian basis. In this article, we prove a necessary and sufficient condition for a pairwise Gaussian basis to achieve the first k successive minima for three dimensional lattices for each k ∈ {1, 2, 3} by modifying Semaev's condition. Our condition directly checks whether a pairwise Gaussian basis contains the first k shortest independent vectors for three dimensional lattices. LLL is the most basic lattice basis reduction algorithm and we study how to use LLL to compute a pairwise Gaussian basis. For δ ≥ 0.9, we prove that LLL(δ) with an additional simple reduction turns any basis for a three dimensional lattice into a pairwise SV-reduced basis. By using this, we convert an LLL reduced basis to a pairwise Gaussian basis in a few simple reductions. Our result suggests that the LLL algorithm is quite effective to compute a basis with all three successive minima for three dimensional lattices.

• Tribology and Lubricants
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• 제11권5호
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• pp.156-161
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• 1995

The subsurface damaged layer in ultraprecisison machined single crystal Ge was examined by ion channeling. Single crystal Ge surfaces were prepared by chemo-mechanical polishing, mechanical polishing with 1/4 gm diamond abrasive, single point diamond turning and ultraprecision orthogonal flycutting. The extent of subsurface lattice disorder was compared to the crystal's orginal surface quality. Ion channeling is seen to be useful for quantitative measure of lattice disorder in finely finished surfaces.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.42-43
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• 2002

Spintronics is a rapidly expanding research area because of recent developments in the physics of spin-dependent phenomena. For use as spintronic materials, dilute magnetic semiconductors (DMS) are of considerable interest as spin injectors for spintronic devices.$^{[1]}$ Many researchers have studied DMS, in which transition metal atoms are introduced into the lattice, thus inserting local magnetic moments into the lattice. (omitted)