• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2006.05a
• /
• pp.593-594
• /
• 2006

A novel thermal transfer method was developed to form the phosphor screen for VPT(Video Phone Tube). This method have advantages of simple process, clean environment, saving raw material and running-cost comparison of electrodeposition, spin coating of conventional methods. But now applying phosphor screen for thermal transfer method has been formed three layers (phosphor layer, ITO layer and thermal adhesive layer) on the PET film as substrate. This is complex process, run to waste of raw-material and require of high cost. Also ITO paste at present has been imported from Japan. To improve these problems, we have manufactured phosphor screen formed by two layers (phosphor layer and ITO layer). We have developed ITO paste that had both conductive and excellent thermal transfer abilities, made it of domestic raw-material.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.314.1-314.1
• /
• 2013

Transparent conducting nanoscale-domes were periodically patterned on a Si substrate by nanoimprint method. Transparent conductor of indium-tin-oxide (ITO) was shaped as a nanodome, which effectively drives the incident light effectively into a light-absorber and therefore induces a substantially enhanced photo-response. An ITO nanodome is electrically isolated from the neighboring nanodomes. This structure benefits to provide a low contact between a Si substrate and a front metal electrode giving an efficient electrical path. The ITO nanodome device showed a significantly enhanced photo-response of 6010 from the value of 72.9 of a planar ITO film. The electrical and optical advantage of an ITO nanodome is suitable for various photoelectric applications.

• Korean Journal of Materials Research
• /
• v.16 no.8
• /
• pp.490-496
• /
• 2006

ITO monolayer and ITO/Ag/ITO multilayer thin films are prepared by D.C. magnetron sputtering method. Ag layer was inserted for applying ITO to a flexible substrate at low temperature. Carrier concentration and carrier mobility of ITO and ITO/Ag/ITO thin films were measured, the transmittance of them also was done. The amorphous phase was confirmed to be combined in addition to (400) and (440) peaks from XRD result of ITO thin film. As the substrate temperature increased, the preferred orientation of (400) appeared. From the result of application of Ag layer at room temperature, the growth of columnar structure was inhibited, and the amorphous phase formed mostly. The ITO/Ag/ITO thin film represented the transmittance of above 80% when the thickness of Ag layer was 50 ${\AA}$, and the concentration of carrier increased up to above 10 times than that of ITO thin film. Finally, since very low resistance of 3.9${\Omega}/{\square}$ was observed, the effective application of low temperature process is expected to be possible for ITO thin film.

• Resources Recycling
• /
• v.27 no.2
• /
• pp.24-31
• /
• 2018

In this study, waste ITO target is dissolved into hydrochloric acid to generate a complex indium-tin chloride solution. Nano sized ITO powder with an average particle size below 30 nm are generated from these raw material solutions by spray pyrolysis process. Also, in this study, thermodynamic equations for the formation of indium-tin oxide (ITO) are established. As the reaction temperature increased from $800^{\circ}C$ to $900^{\circ}C$, the proportion and size of the spherical droplet shape in which nano sized particles aggregated gradually decreased, and the surface structure gradually became densified. When the reaction temperature was $800^{\circ}C$, the average particle size of the generated powder was about 20 nm, and no significant sintering was observed. At a reaction temperature of $900^{\circ}C$, the split of the droplet was more severe than at $800^{\circ}C$, and the rate of maintenance of the initial atomized droplet shape decreased sharply. The average particle size of the powder formed was about 25 nm. The ITO particles were composed of single solid crystals, regardless of reaction temperature. XRD analysis showed that only the ITO phase was formed. Remarkably, the specific surface area decreased by about 30% as the reaction temperature increased from $800^{\circ}C$ to $900^{\circ}C$.

• Journal of Information Display
• /
• v.6 no.3
• /
• pp.18-21
• /
• 2005

A new technology for reducing photolithography process from a four step to a three step process in the fabrication of TFT LCD is introduced. The core technology for 3-mask-TFT processes is the lift-off process [1], by which the PAS and PXL layers can be formed simultaneously. A different method of the lift-off process was developed in order to enhance the performance of efficiency with conventional positive and not negative PR which is the generally used in other lift-off process. In addition, the removal capacity of the ITO/PR in lift-off process was evaluated. The evaluation results showed that the new process can be run in conventional TFT production condition. In order to apply this new process in existing TFT process, several tests were conducted to ensure stability of the TFT process. It was found that the outgases from PR on the substrate in ITO sputtering chamber do not raise any problem, and the deposited ITO film beside the PR has conventional ITO qualities. Furthemore, the particles that were produced due to the ITO chips in PR strip bath could be reduced by the existing filtering system of stripper. With the development of total process and design of the structure for TFT using this technology, 3-mask-panels were achieved in TN and IPS modes, which showed the same display performances as those with the conventional 4mask process. The applicability and usefulness of the 3-mask process has already verified in the mass production line and in fact it currently being used for the production of some products.

• Journal of IKEEE
• /
• v.21 no.4
• /
• pp.404-407
• /
• 2017

We investigated the microstructure, electrical and optical characteristics of ZnO, AZO and ITO films using aerosol deposition process. As gas consumption increased, the electrical and optical characteristics of ZnO, AZO and ITO films were improved, and electrical and optical characteristics of ZnO, AZO and ITO films with a thickness of 400 nm were successfully fabricated on PET substrates at room temperature. The mechanical flexibility durability test shows that the ZnO films can withstand 5,000 cycles and AZO and ITO films occurs to crack in films with degradation of resistance and transmittance. Even though the AZO and ITO films shows slightly lower durability than the ZnO films, this is expected to improve performance of films through optimized processing condition and particle size control.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.05a
• /
• pp.35-38
• /
• 1995

Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

• Journal of the Korean Graphic Arts Communication Society
• /
• v.22 no.2
• /
• pp.73-82
• /
• 2004

A thermal transfer method was developed novel method to form the phosphor screen for monochrom VPT. This method have advantages of simple process, clean environment, saving raw material and running-cost. But now applying phosphor screen for thermal transfer method has been formed three layers (phosphor layer, ITO layer and thermal adhesive layer) on the PET film as substrate. This is complex process, consumption of raw-material and require of high cost. Also ITO paste at present has been imported from Japan. To improve these problems, we have developed ITO paste as conductive paste by using ITO sol and binder resin (AA3003). Ito paste as developed in this study has both conductive and excellent thermal transfer abilities. Thus we could manufacture phosphor screen formed two layers (phosphor layer and ITO layer).

• Journal of the Korean Ceramic Society
• /
• v.44 no.6 s.301
• /
• pp.313-318
• /
• 2007

ITO (Indium-tin oxide) thin films have been prepared by a sol-gel spinning coating method and fired and annealed in the temperature range of $450-600^{\circ}C$. The XRD patterns of the films indicated the main peak of (222) plane and showed higher crystallinity with increasing an annealing temperature. The surface of the ITO thin films were treated with 0.1 N HCl 20% solution at room temperature. The effects of surface treatment on electrical properties and surface morphologies of the ITO films were investigated with the results of sheet resistance and FE-SEM, AFM images. The samples, subsequently treated with acidic solution for 40 sec showed the sheet resistance of $0.982\;k{\Omega}/square$. The surface treatment using acidic solution diminished the RMS (root mean square) value and the residual carbon content of the ITO films. It seemed that the acid-cleaning of the ITO thin films lead to the decrease of surface roughness and sheet resistance.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.14 no.1
• /
• pp.92-97
• /
• 2015

The design of the glass-carrier was studied using simulations of the temperature distribution of an ITO deposition inline-sputter process. The temperature distribution was simulated in Heating Chamber 7, and in the ITO Deposition Chambers 8 and 9. The temperature distribution of the glass sheets was low in both the lower and upper lines. Moreover, it was observed that the temperature in Chamber 8 significantly affected the temperature in Chamber 9, and that the latter was hotter. The rear of the chambers were subjected to more heating than the fronts, so the temperature range at the back was wider. Redesigning the shape of the carrier made it possible to load more glass sheets on the glass carrier, and to make deposits on the ITO glass at higher temperature, over a wider area.