• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.272-278
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• 2021

In this study, high nickel layered LiNi_0.8Co_0.1Mn_0.1O₂ cathode materials for lithium-ion batteries were modified by yttrium doping and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) coating. The effects of yttrium doping and PEDOT:PSS coating on the structural and electrochemical properties of the LiNi_0.8Co_0.1Mn_0.1O₂ cathode material were investigated and compared. The substitution of nickel with an electrochemically inert yttrium was confirmed to be successful in stabilizing the layered structure framework. Moreover, coating the surfaces of the LiNi_0.8Co_0.1Mn_0.1O₂ particles with a conductive polymer, PEDOT:PSS, improved the capacity retention, thermal stability, and impedance of the cathode material by increasing its ionic and electric conductivities.

• Journal of Magnetics
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• v.11 no.1
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• pp.51-54
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• 2006

Variation of magnetic properties through Cr substitution for Co in inverse-spinel $CoFe_2O_4$ has been investigated by vibrating-sample magnetometry (VSM) and conversion electron $M\ddot{o}ssbauer$ spectroscopy (CEMS). $Cr_{x}Co_{1-x}Fe_2O_4$ samples were prepared as thin films by a sol-gel method. The lattice constant of the $Cr_{x}Co_{1-x}Fe_2O_4$ samples was found to remain unchanged, explainable in terms of a reduction of tetrahedral $Fe^{3+}$ ion to $Fe^{2+}$ due to substitution of $Cr^{3+}$ ion into octahedral $Co^{2+}$ site. The existence of the tetrahedral $Fe^{2+}$ ions in $Cr_{x}Co_{1-x}Fe_2O_4$ was confirmed by CEMS analysis. Room-temperature magnetic hysteresis curves for the $Cr_{x}Co_{1-x}Fe_2O_4$ films measured by VSM revealed that the saturation magnetization $M_s$ increases by Cr doping. The $M_s$ is maximized when x = 0.1 and decreases for higher x but is still bigger than that of $CoFe_2O_4$. The increase of $M_s$ can be explained partly by the reduction of the tetrahedral $Fe^{3+}$ ion to $Fe^{2+}$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• Korean Journal of Materials Research
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• v.30 no.9
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• pp.458-464
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• 2020

Zinc-ion hybrid supercapacitors (ZICs) have recently been spotlighted as energy storage devices due to their high energy and high power densities. However, despite these merits, ZICs face many challenges related to their cathode materials, activated carbon (AC). AC as a cathode material has restrictive electrical conductivity, which leads to low capacity and lifetime at high current densities. To overcome this demerit, a novel boron (B) doped AC is suggested herein with improved electrical conductivity thanks to B-doping effect. Especially, in order to optimize B-doped AC, amounts of precursors are regulated. The optimized B-doped AC electrode shows a good charge-transfer process and superior electrochemical performance, including high specific capacity of 157.4 mAh g^-1 at current density of 0.5 A g^-1, high-rate performance with 66.6 mAh g^-1 at a current density of 10 A g^-1, and remarkable, ultrafast cycling stability (90.7 % after 10,000 cycles at a current density of 5 A g^-1). The superior energy storage performance is attributed to the B-doping effect, which leads to an excellent charge-transfer process of the AC cathode. Thus, our strategy can provide a rational design for ultrafast cycling stability of next-generation supercapacitors in the near future.

• Journal of Powder Materials
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• v.30 no.6
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• pp.516-520
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• 2023

Highly safe lithium-ion batteries (LIBs) are required for large-scale applications such as electrical vehicles and energy storage systems. A highly stable cathode is essential for the development of safe LIBs. LiFePO₄ is one of the most stable cathodes because of its stable structure and strong bonding between P and O. However, it has a lower energy density than lithium transition metal oxides. To investigate the high energy density of phosphate materials, vanadium phosphates were investigated. Vanadium enables multiple redox reactions as well as high redox potentials. LiVPO₄O has two redox reactions (V⁵⁺/V⁴⁺/V³⁺) but low electrochemical activity. In this study, LiVPO₄O is doped with fluorine to improve its electrochemical activity and increase its operational redox potential. With increasing fluorine content in LiVPO₄O_1-xF_x, the local vanadium structure changed as the vanadium oxidation state changed. In addition, the operating potential increased with increasing fluorine content. Thus, it was confirmed that fluorine doping leads to a strong inductive effect and high operating voltage, which helps improve the energy density of the cathode materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• Journal of the Korean Institute of Gas
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• v.15 no.3
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• pp.74-78
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• 2011

$BF_3$ gas has been used for semiconductor manufacturing process and applied in plasma etching, chemical vapor deposition, chamber cleaning processes etc,. $BF_3$ provides Boron and acts as a p-type doping in electrode in semiconductor. In this study, we investigate thermaldecomposition of alkali-boron complexes and suggest a simple way to produce $BF_3$ from $NaBF_4$ and $KBF_4$.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.69-78
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• 2016

Liquid crystals are important materials because of their applications in display technology and many other scientific applications. Different mixtures of liquid crystals and their doped samples have gained interest because a single liquid crystal compound cannot fulfill all the required parameters for the display application. The doping can be accomplished with dyes, polymers, or composite nanoparticles among other substance. The addition of nanoparticles can modify the physical properties of the host liquid crystal and enhances the performance of electro-optical devices. The present study is focused on investigations of possible changes in dielectric and electro optical properties of liquid crystals caused by doping with ceramic nanoparticles. Including smaller nanoparticles were found to be better candidates for use in suppressing the unwanted ion effects in liquid crystal displays.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.28-32
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• 1992

The electrical properties of ONO interpoly dielectrics grown by polycrystalline silicon have been studied. The polysilicon layer deposited as amorphous state kept its surface smoothness even after subsequent heat cycle induced crystallization. Polysilicon was doped with a POCl$_3$ and arsenic ion implantation. Arsenic was implanted in several different doses. The effective barrier heights calculated from F-N plotting method and breakdown fields increased as the polysilicon doping concentration increased. On the other hand they mere degraded when arsenic concentration in polysilicon exceeded 2{\times}10^{20}[cm^{-3}]$. The reliability of dielectric as monitored by TDDB infant fail and breakdown field showed increasing degradation as doping concentration increased

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.267-269
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• 2003

반도체 웨이퍼 및 각종 박막의 면/비저항(sheet/resistivity resistance)의 측정에 비교적 간단히 측정할 수 있고 측정정확도가 높은 4탐침(four-point probe)방법이 널리 사용되고 있다 또한 4탐침 측정방법은 높은 분해능의 contour map작성과 ion implantation의 doping accuracy 및 doping uniformity의 측정에도 사용된다. 최근 재료의 소형, 박막화 경향으로 볼 때 정확한 비저항 측정의 필요성이 요구되고 있으며 이에 따라 4탐침 측정기술인 single 및 dual configuration method로 실리콘 웨이퍼에 대한 비저항의 측정 정확도를 고찰한 결과 dual configuration 측정방법이 single configuration측정 방법에 비하여 정밀 정확도가 더 좋은 것으로 고찰되었다.