• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1268-1270
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• 1994

Fine lithographic technology in a submicron design regime is necessary for the fabrication of VLSI circuits. In such lithography, fine pattern delineation is performed by electron beam, ion beam and X-ray lithography instead of photolithography. Therefore, the new resist materials and development method have been required. So, we are investigating another positive E-beam resists which have high sensitivity and dry etching resistance, Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reacter. Methymethacrylate, tetramethyltin and styrene were chosen as the monomer to be used. The delineated pattern in the resist was developed with gas-flow-type reactor using an argon and 02 as etching gas. We studied about the effects of discharge power and mixing rate of the co-polymerized thin :film. The molecular structure of thin film was investigated by ESCA and IR, and then was discussed in relation to its quality as a resist.

• Journal of Korea Foundry Society
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• v.28 no.6
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• pp.282-287
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• 2008

The effect of CaO mold on the formation of reaction layer was investigated. CaO mold was prepared by mixing of Colloidal silica($NALCO^{(R)}$ 1130) and an $ZrO_2$, CaO at room temperature. The dried at $20{\pm}3^{\circ}C$, 75% humidity for 12hrs. Sample was prepared from the Cp-Ti(grade-2) and melted by high frequence induction melting system in the vacuum condition. The react ion layer of Ti was confirmed by optical microscopy, microhardness(Hv) and X-ray diffraction. Thickness of reaction layer using the CaO stabilized ZrO2 was thinner than the CaO added ZrO2. And thickness of reaction layer were decreased with decreasing pH of slurry. CaO addition in the slurry could not controlled reaction between molten Ti and investment mold. On the other hand, the CaO chemical bonded ZrO2 by stabilization treatment could controlled reaction between molten Ti and investment mold.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.553-556
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• 2008

We have studied about chloride penetration test by electrical conductance to 10 specimens made from same test batch. The coefficient of variation of total passed charge(Colombs) was about 24% in same specimens, and we draw a conclusion this method has a low reliability. Owing to complicated reaction ; heterogeneous material, mixing error and error of testing method, then we must consider the scope of the error which is introduced. Specially when you trying to get one test result against one spcimen, you can commit a big error, therefore we recommend that you use mean value against 3 specimens at least.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Corrosion Science and Technology
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• v.19 no.1
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• pp.31-36
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• 2020

An efficient wet process approach to modifying natural graphite (NG) electrodes for Li-ion batteries is introduced in this paper. With homogeneous mixing and thermal decomposition of NG with diammonium phosphate ((NH₄)₂HPO₄), phosphorus and nitrogen were successfully incorporated into the surface layer of NG particles. Electron microscopy and X-ray photoelectron spectroscopy analyses demonstrated that the surface was well modified by this process. As a result, the treated NG electrodes exhibited much improved electrochemical performance over pristine NG at two different temperatures: 25 ℃ and 50 ℃. Excellent capacity retention of 95.6% was obtained after 100 cycles at 50 ℃. These enhanced properties were confirmed in a morphology analysis on the cross-sections of the NG electrodes after galvanostatic cycling. The improved cycle and thermal stabilities can be attributed to the surface treatment with phosphorus and nitrogen; the treatment formed a stable solid electrolyte interphase layer that performed well when undergoing Li insertion and extraction cycling.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.97-102
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• 1998

Transition metal Cr3+ and Fe3+ ion was diffused in white sapphire {0001}, {1010} crystal plane which were grown by the Verneuil method. It enhanced and changed the physical, electrical and optical properties of sapphires. After mixing the metallic oxide and metal powder, it were used for diffusion. Metallic oxide was synthesized by precipitation method and it's composition was mainly alumina which doped with chromium or ferric oxide. In case using metallic oxide, the dopping was slowly progressed and it needed the longer duration time and higher temperature, relatively. Metallic powder was vapoured under 1x10-4 torr of vacuum pressure at 1900(iron metal) and 2050(chromium)℃, first step. Diffusion condition were kept by 6atm of N2 accelerating pressure at 2050∼2150℃. Each surface density of sapphire crystal are 0.225(c) and 0.1199atom/Å2(a). The color of the Cr-doped sapphires was changed to red. Dopping reaction was come out more deep in th plane of {1010} than {0001}. It was speculated that the planar density was one of the factors to determine diffusion effect.

• Journal of Environmental Science International
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• v.4 no.1
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• pp.91-103
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• 1995

The reaction rate, equilibrium, and flow injection analysis methods were fundamentally evaluated for the determination of aqueous ammonia. The selected indophenol blue method was based on the formation of indophenol blue in which ammonium ion reacted with hypochlorite and phenol in alkaline solution. In the optimized reaction condition, the reaction followed 1st order reaction kinetics and the final product was stable. The absorbance measurements before and after the equilibrium were utilized for the reaction rate and equilibrium methods. The reaction rate methods, based on the relative analytical signals for the possibility of eliminating interferents, were shown to have good linear calibration curves but the detection limit and the calibration sensitivity were poorer than those in the equilibrium method. The detection limits were 32-49 pub and 24 pub for the reaction rate and equilibrium methods, respectively In the flow injection analysis, the absorbance was measured before the equilibrium reached and thus resulted in 30% reduction of calibration sensitivity. However, the detection limit was 11 ppb, indicating that the peak-to-peak noise for the blank was remarkably improved. Compared to the manual methods, the optimized experimental condition in a closed reaction system reduced the blank absorbance and the inclusion of ammonia from the atmosphere was prevented. In addition, highly reproducible mixing of sample and reagents and analytical data extracted from continuous recording showed excellent reproducibility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.144-148
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• 2012

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.