• Journal of Environmental Science International
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• v.15 no.11
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• pp.1027-1034
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• 2006

Antimicrobial powder was made by exchanging silver ion on calcined oyster shell. On the purpose of application to water clarifier, bail-type media mixed with antimicrobial powder and $0{\sim}30%$ white kaoline were made. The sterilization effect, pore size distribution and zeta potential was tested to indicate the condition for the media of water clarifier. From these tests, it was confirmed that this media have an excellent sterilization power on $G^-\;and\;G^+$ germs. As the concentration of the exchanged silver ion increased, the surface charge density of the anions on the surface of the media also increased. The surface pore size decreased with the concentration of silver ion and 20% more white kaoline ratio. Consequently, mixing ratio of white kaoline would appear to indicate the optimun condition as media have sterilization power.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.3
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• pp.370-375
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• 1986

In this paper, modeling of the conduction mechanism of ion implanted p-type polycrystalline silicon is studied. From this modeling, the resistivity of p-type polycrystalline and its dependence on dopant concentration are calculated. The proposed modeling whose grain size is about 1450 \ulcorneris shwon to agree well with the experimental result.

• Journal of Microbiology and Biotechnology
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• v.14 no.2
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• pp.363-366
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• 2004

In order to obtain an industrial strain with higher L(+)-lactic acid yield, the wild type strain Rhizopus oryzae PW352 was mutated by means of Nitrogen ions implantation (l5 Kev, $7.8 \times 10^{14} - 2.08 \times 10^{15} ions/Cm^2$ and two mutants RE3303 and RF9052 were isolated. After 36 h shake-flask cultivation, the concentration of L(+)-lactic acid reached 131-136 g/l, the conversion rate of glucose was as high as 86%-90% and the productivity was 3.61 g/l.h. It was almost a 75% increase in lactic acid production compared with the wild type strain. Maximum fermentation temperature of RF9052 was increased to $45^{\circ}C$ from original $36^{\circ}C$. At the same time, the preferred range of fermentation temperature of RF9052 was broadened compared with PW352.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.89-95
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• 1995

The structure of boron ion-implanted pn junctio in the vacancy-doped p-type HgCdTe was investigated with the differential Hall measurement. The as-implanted junction showed the electron concentration as high as 1${\times}10^{18}/cm^{3}$ and the junction depth of 0.6.mu.m. When the HgCdTe junction was heated in oven, the electron concentration near the junction decreased and the junction depth increased as the annealing temperature and time increased. The junction structure after the thermal annealing was n$^{+}$/n$^{-}$/p. For the 200.deg. C 20min annealed sample, the electron mobility was 10$^{4}cm^{2}/V{\cdot}$s near the surface(n$^{+}$), and was larger thatn 10$^{5}cm^{2}/V{\cdot}$s near the junction(n$^{+}$). The junction formation mechanism is conjectured as follows. When HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms near the surface. The displaced Hg vacancies diffuse in easily by the thernal treatment and a fill the Hg vacancies in the p-HgCdTe substrate. With the Hg vacancies filled completely, the GfCdTe substrate becomes n-type because of the residual n-type impurity which was added during the wafer growing. Therefore, the n$^{+}$/n$^{-}$/p regions are formed by crystal defects, residual impurities, and Hg vacancies, respectively.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• Geomechanics and Engineering
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• v.10 no.6
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• pp.807-826
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• 2016

In this study, aiming to investigate the effects of sulfate attack on cement stabilized highly plastic clay; an experimental study was carried out considering the effects of cement type, sulfate type and its concentration, cement content and curing period. Unconfined compressive strength and chloride-ion penetration tests were performed to obtain strength and permeability characteristics of specimens cured under different conditions. Test results were evaluated along with microstructural investigations including SEM and EDS analyses. Results revealed that use of sulfate resistance cement instead of normal portland cement is more plausible for soils under the threat of sulfate attack. Besides, it was verified that sulfate concentration is responsible for strength loss and permeability increase in cement stabilized montmorillonite. Finally, empirical equations were proposed to estimate the unconfined compressive strength of cement stabilized montmorillonite, which was exposed to sulfate attack for 28 days.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.476-479
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• 2000

In this study, mesh-type PECVD system was suggested to minimize the hydrogen concentration. The main structural difference between the triode system and a conventional system is that a mesh was attached to the substrate holding electrode. We investigated several conditions to compare with conventional PECVD. The main effect of mesh was to minimize the substrate damage by ion bombardment and to enhance the surface reaction to induce hydrogen desorption. It was also found that hydrogen concentration decreased but deposition rate increased as increasing applied dias. Applied DC bias enhanced sputtering process. Intense ion bombardment causes the weakly bonded hydrogen or hydrogen-containing species to leave the growing film and increased adatom mobility. Furthermore, addition of hydrogen gas enhance the surface diffusion of adatom. The structural properties of poly-Si films were analyzed by scanning electron microscopy(SEM).

• Journal of environmental and Sanitary engineering
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• v.15 no.4
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• pp.114-122
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• 2000

Several new ion exchange resins have been synthesized from chloromethyl styrene-1,4-divinylbenzine with 1%, 2%, 5% and 105-crosslink and macrocyclic ligands of cryptand type by interpolymerization method. The adsorption characteristics and the pH, time, solvents and concentration dependence of the adsorption of uranium ion by this resins were studied. The resins were very stable in both acidic and basic media and have good resistance to heat at $300^{\circ}C$. The uranium ion are not adsorbed on the resins below pH 3.0, but the power of adsorption of it increased rapidly above pH 4.0. The optimum equilibrium time for adsorption of uranium ion was two hours and adsorptive power decreased in proportion to crosslink size of the resins and order of dielectric constants of solvents used and the adsorption for uranium ion was bin the order of $OdienNtn-H_4$ > $OtnNen-H_4$ > $OtnNen-H_4$ > $OenNen-H_4$.

• Journal of Ginseng Research
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• v.20 no.3
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• pp.269-273
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• 1996

We investigated the effects of ginseng glycosides and their aglycones on processes of single ion channel formation and channel properties. The glycosides, Rg, and Rb, , and their aglycones, 20-(S)-protopanaxatriol (PT) and 20-(S)-protopanaxadiol (PD) increased the membrane permeability for ions. PT, PD, Rg1, and Rb1; at concentrations of 0.5, 3.0, 10.0 and 30.0 $\mu\textrm{g}$/ml respectively; Induced single ion channel fluctuations with the life times in the range of 0.1~1005 in open states and conductances from 5 to 30 pS in 1 M KCI. At high concentrations of these substances, rapid fluctuations of transmembrane ion current with amplitude from hundred pS to dozen nS were observed. Against other substances, ginsenoside Rbl began to increase the membrane conductance at concentration of about 60 $\mu\textrm{g}$/ml without fluctuation of single ion channel. Membranes treated with PT, PD, Rg1 and Rb1 are more permeable to K+, than to Cl while zero current membrane potentials with 10 gradients of KCI were 12, 16, 8, 25 mV respectively. Key words : Membrane conductance, single ion channel, ginsenosides.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.