Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

The Resistivity Modeling of Ion Implanted Polycrystalline Silicon

이온주입에 의한 다결정 실리콘의 고유저항 모델링

  • Park, Jong Tae (Dept. Elec. Eng., Yonsei Univ.) ;
  • Lee, Moon Key (Dept. Elec. Eng., Yonsei Univ.) ;
  • Kim, Bong Ryul (Dept. Elec. Eng., Yonsei Univ.)
  • 박종태 (연세대학교 전자공학과) ;
  • 이문기 (연세대학교 전자공학과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Published : 1986.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, modeling of the conduction mechanism of ion implanted p-type polycrystalline silicon is studied. From this modeling, the resistivity of p-type polycrystalline and its dependence on dopant concentration are calculated. The proposed modeling whose grain size is about 1450 \ulcorneris shwon to agree well with the experimental result.

Keywords