• 대한전기학회논문지
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• 제35권2호
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• pp.62-66
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• 1986

Ion beam etching of silicon with N2 and Ar gas has been found to cause the band edge to bend downward near the surface in p-type silicon. Rectifying, rather than ohmic contacts are obtained on the structures formed by evaporation of gold and titanium onto ion-bean-etched p-type silicon. The 1/C2 versus V relationship measured at 1MHz is found to be nonlinear for small voltages indicating alteration of the effective doping colse to the silicon surface.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
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• pp.50-50
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• 2001

• 폴리머
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• 제26권6호
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• pp.718-727
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• 2002

본 연구에서는 최종 복합재료의 기계적 계면특성을 향상시키기 위하여 산소 분위기 하에서 반응성 기체를 사용하는 이온 보조 반응법에 의해 탄소섬유 표면에 Ar+ 이온 빔을 조사하였다. 그리고, 단일 섬유 pull-out 시험을 실시하여 가해진 이온 에너지 세기에 대한 수지 내의 섬유의 뽑힘 정도를 측정한 후 Greszczuk의 .기하학적 모델에 기초하여 섬유/매트릭스 간의 계면특성을 알아보고자 하였다. 그 결과, 탄소섬유를 이온 빔으로 처리함에 따라 섬유와 매트릭스 간의 부착력 증가의 원인이 되는 섬유축 방향으로의 표면 etching 및 반응성 그룹이 형성되어 계면 전단강도가 향상되었으며 0.8 keV 이온 빔 세기에서 최대값을 나타내었다.

• 한국정밀공학회지
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• 제29권4호
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• pp.479-486
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• 2012

Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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• pp.72-75
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• 2002

Magnetoresistance (MR) of mumetal/Co/Co/Co multilayer is measured as a function of surface etching on the top Co layer by ion beam etching system. As the etching process proceeds, Co thickness and roughness decreases. MR is dominantly affected by Co layer thickness, but surface roughness makes no significant effect on the MR of mumetal/Co/Cu/Co multilayer.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.224-225
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• 2002

강자성체의 스핀 분극을 이용하는 스핀트로닉스에 대한 연구는 매우 활발히 이루어지고 있다. CoFe 합금은 큰 포화자화와 스핀분극 때문에 스핀트로닉스 재료로 널리 이용되고 있다. 본 연구에서는 Ion Beam Etching 방법으로 CoFe 박막을 미세 가공 할 때 에칭 조건에 따른 CoFe 박막의 자기적 특성 변화를 조사하였다. 에칭 변수가 에칭에 미치는 영향을 사전에 조사하기 위하여 Cu 박막에 대하여 에칭시간, 기울임 각도, 가속 전압을 변화시키면서 식각한 후 거칠기 변화를 조사하였다. (중략)

• 대한기계학회논문집A
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• 제30권3호
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• pp.328-333
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• 2006

Movable nanometer-scale structures are fabricated by selective etching of single crystalline Au nanoplates. The nanostructures have arbitrary shapes like gear and alphabet 'A' with in-plane size less than 500 m and thickness of $25\sim60nm$. They could be moved successfully on the substrate using a nanornanipulator installed in a focused ion beam system. Our approach is expected to be useful in fabricating various kinds of nanocomponents which can play a role as building blocks for the sophisticated nanodevices or micromachines.

• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.425-429
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• 1994

In this paper, we study on the plasma polymerized styrene as a negative electron-beam resist. Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of the resist. Molecular weight distribution of plasma polymerized styrene is 1.41-3.93, and deposition rates of that are 32-383[.angs./min] with discharge power. Swelling and etching resistance becomes . more improved with increasing discharge power during plasma polymerization. Etch rate by RIE is higher than that by plasma etching.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.365-366
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• 2008

• 한국정밀공학회지
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• 제28권2호
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• pp.245-250
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• 2011

A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.