• Tribology and Lubricants
• /
• v.33 no.3
• /
• pp.92-97
• /
• 2017

The understanding of the friction characteristics of micro-textured surface is of great importance to enhance the tribological properties of nano- and micro-devices. We fabricate rectangular patterns with submicron-scale structures on a Si wafer surface with various pitches and heights by using a focused ion beam (FIB). In addition, we fabricate tilted rectangular patterns to identify the influence of the tilt angle ($45^{\circ}$ and $135^{\circ}$) on friction behaviour. We perform the friction test using lateral force microscopy (LFM) employing a colloidal probe. We fabricate the colloidal probe by attaching a $10{\pm}1-{\mu}m$-diameter borosilicate glass sphere to a tipless silicon cantilever by using a ultraviolet cure adhesive. The applied normal loads range between 200 nN and 1100 nN and the sliding speed was set to $12{\mu}m/s$. The test results show that the friction behavior varied depending on the pitch, height, and tilt angle of the microstructure. The friction forces were relatively lower for narrower and deeper pitches. The comparison of friction force between the sub-micro-structured surfaces and the original Si surface indicate an improvement of the friction property at a low load range. The current study provides a better understanding of the influence of pitch, height, and tilt angle of the microstructure on their tribological properties, enabling the design of sub-micro- and micro-structured Si surfaces to improve their mechanical durability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.2
• /
• pp.99-104
• /
• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1155-1158
• /
• 2004

Various inorganic alignment layers of nematic liquid crystal (NLC) molecules were investigated. Ar ion beam (IB) irradiation was utilized for alignment method and homogenous and homeotropic orientations with tilt angle were obtained on the suitable inorganic thin films. Proper doping materials were added to diamond-like carbon (DLC) films. In the case of homogeneous alignment, nitrogen doping affected the increase of pretilt angle, while the fluorine bonding in the DLC films was induced the tilted homeotropic alignment cause its extreme hydrophobic property. These results showed that ion beam irradiation method could be applied to the various alignment mode of NLC such as IPS, TN and MVA.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.6
• /
• pp.301-304
• /
• 2006

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability make SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by atomic beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}\;to\;45^{\circ}$ of incident angle. Consequently, the vertical alignment effect of liquid crystal electro-optical characteristic by the atomic beam alignment method on the SiC thin film layer can be achieved.

• Journal of the Korea Society for Simulation
• /
• v.9 no.4
• /
• pp.51-58
• /
• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. The novel junction process scheme in sub-micron DRAM cell with STI(Shallow Trench Isolation) has been investigated to improve the tail component in the retention time distribution which is of great importance in DRAM characteristics. In this' paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced ${\Delta}Rp$ (projected standard deviation) increase using buffered N-implantation with tilt and 4X(4 times)-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N-concentration which is Intentionally caused by ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation. And also, we suggest the least requirements for adoption of this new implantation scheme and the method to optimize the key parameters such as tilt angle, rotation number, Rp compensation and Nd/Na ratio. We used MEDICI Simulator to confirm the junction device characteristics. And measured the refresh time using the ADVAN Probe tester.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.9 no.11
• /
• pp.1227-1232
• /
• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for core devices as well as input and output (I/O) devices different from previous poly length shrink size only. We analyzed body effect with different channel length and doping profile simulation. After fixing the gate oxide module process, LDD implant conditions were optimized such as decoupled plasma nitridation of gate oxide, TEOS oxide $100{\AA}$ before LDD implant and 22o tilt-angle(45o twist-angle) LDD implant respectively to match the spice DC parameters of pre-shrink and finally matched them within 5%.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.6
• /
• pp.265-267
• /
• 2007

The liquid crystal(LC) aligning capabilities of a nematic liquid crystal(NLC) on a homeotropic polyimide(PI) surface using a new ion-beam method were studied. Exposure ion-beam of $45^{\circ}$ incidence angle shows a good LC alignment of the NLC on the homeotropic PI surface. Also, on the homeotropic PI surface, the tilt angle of the NLC by exposure ion-beam of $45^{\circ}$ incidence angle had a tendency to decrease as increased ion-beam energy density. And, on the homeotropic PI surface, the alignment character of the NLC with respect to ion-beam energy was good at 1500 eV. And we achieved satisfactory result for EO character.

• Analytical Science and Technology
• /
• v.19 no.5
• /
• pp.400-406
• /
• 2006

Hydrogen analysis by elastic recoil detection has been performed utilizing polyimide film as a reference sample of known hydrogen content assuming the soundness of ion beam current integration. However beam current integration at higher incidence angle is not reliable. Scattering yield per unit fluence by current integration which is normalized per unit path length decreases as the sample tilt angle is getting higher. Moreover because beam current integration at high tilt angle is incomplete, hydrogen evaluation is very risky by direct comparison of sequentially collected recoil spectra between reference and target sample. In this study, primary ion beam dose is determined by backscattering spectrum that is collected simultaneously with recoil spectrum instead of ion beam current integration in order to reduce uncertainty arising in the process of current integration and to enhance the reliability of quantitative analysis. Three test samples are selected $-7.6{\mu}m$ polyimide film, hydrogen implanted silicondioxide and Au deposited carbon wafer- and analyzed by two methods and compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.93-96
• /
• 1996

We developed three dimensional Monte carlo ion implantation simulator which simulate distributions of impurities under the ion implantation on the tilted multi-layered layer. Our simulation reveals three dimensional shadow effect and sidewall scattering effect due to the geometrical shapes. For the evaluation of the developed three dimensional Monte carlo ion implantation simulator, calculations with 100,000 ions have been performed for the island and hole structures with a thin oxide of 100$\AA$ and nitride of 2000$\AA$. The simulation results showed that the distribution of ion decreases near the conner of the hole structure covered with a nitride layer and increases near the conner for the island structure open to oxide. Moreover, three dimensional distributions of ions were obtained with varying incident energy, tilt and rotation angle, mask depth and three-dimensional structure geometry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04a
• /
• pp.44-44
• /
• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.