Journal of the Korea Society for Simulation (한국시뮬레이션학회논문지)
- Volume 9 Issue 4
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- Pages.51-58
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- 2000
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- 1225-5904(pISSN)
A Study on Refresh Time Improvement of DRAM using the MEDICI Simulator
MEDICI 시뮬레이터를 이용한 DRAM의 Refresh 시간 개선에 관한 연구
Abstract
The control of the data retention time is a main issue for realizing future high density dynamic random access memory. The novel junction process scheme in sub-micron DRAM cell with STI(Shallow Trench Isolation) has been investigated to improve the tail component in the retention time distribution which is of great importance in DRAM characteristics. In this' paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced
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