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http://dx.doi.org/10.13067/JKIECS.2014.9.11.1227

A Study on the DC parameter matching according to the shrink of 0.13㎛ technology  

Mun, Seong-Yeol (전남대학교 전기및반도체공학과)
Kang, Seong-Jun (전남대학교 전기및반도체공학과)
Joung, Yang-Hee (전남대학교 전기및반도체공학과)
Publication Information
The Journal of the Korea institute of electronic communication sciences / v.9, no.11, 2014 , pp. 1227-1232 More about this Journal
Abstract
This paper relates 10% shrink from $0.13{\mu}m$ design for core devices as well as input and output (I/O) devices different from previous poly length shrink size only. We analyzed body effect with different channel length and doping profile simulation. After fixing the gate oxide module process, LDD implant conditions were optimized such as decoupled plasma nitridation of gate oxide, TEOS oxide $100{\AA}$ before LDD implant and 22o tilt-angle(45o twist-angle) LDD implant respectively to match the spice DC parameters of pre-shrink and finally matched them within 5%.
Keywords
LDD Implant; Ion Implant; Gate Oxide; Shrink; Matching;
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Times Cited By KSCI : 3  (Citation Analysis)
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