• Title/Summary/Keyword: Ion Composition

Search Result 790, Processing Time 0.026 seconds

Effects of the Brazing Bonding between Al2O3 and STS304 with an Ion Beams (이온빔을 이용한 STS304와 알루미나 브레이징 접합효과)

  • Park, Il-Soo
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.16 no.12
    • /
    • pp.8679-8683
    • /
    • 2015
  • Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.

Physical Properties of AuGe Liquid Metal Ion Implanted n-GaAs (AuGe 액체금속 이온이 주입된 n-GaAs의 물성연구)

  • Kang, Tae-Won;Lee, Jeung-Ju;Kim, Song-Gang;Hong, Chi-Yhou;Leem, Jae-Young;Chung, Kwan-Soo
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.26 no.6
    • /
    • pp.63-70
    • /
    • 1989
  • The ion beam extracted from the AuGe liquid metal ion source was implanted into GaAs substrate. The surface composition and the structure of ion implanted samples were investigated by AES, RHEED, SEM and EPMA. The depth profiles measured by AES were compared with the results of Monte Carlo simulation based on the two-body collision. As the results of AuGe ion implantation the preferential sputtering of As were revealed by AES and EPMA, and the outdiffusion of Ga and Ge was investigated by 300$^{circ}C$ annealing. The Au and Ge depth profiles measured by AES agreed with the results of Monte Carlo simulation based on the two-body collision.

  • PDF

Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP(Inductive Coupled Plasma) Etcher (초미세 공정에 적합한 ICP(Inductive Coupled Plasma) 식각 알고리즘 개발 및 3차원 식각 모의실험기 개발)

  • 이영직;박수현;손명식;강정원;권오근;황호정
    • Proceedings of the IEEK Conference
    • /
    • 1999.06a
    • /
    • pp.942-945
    • /
    • 1999
  • In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.

  • PDF

Novel Silver(I) Ion Selective PVC Membrane Electrode Based on the Schiff Base (N2E,N2'E)-N2,N2'-Bis(Thiophen-2-ylmethylene)-1,1'-Binaphthyl-2,2'-Diamine

  • Jeong, Eunseon;Ahmed, Mohammad Shamsuddin;Jeong, Hae-Sang;Lee, Eun-Hee;Jeon, Seung-Won
    • Bulletin of the Korean Chemical Society
    • /
    • v.32 no.3
    • /
    • pp.800-804
    • /
    • 2011
  • A potentiometric sensor based on the Schiff base $(N^2E,N^{2'}E)-N^2,N^{2'}$-bis(thiophen-2-ylmethylene)-1,1'-binaphthl-2,2'-diamine has been synthesized and explored as an ionophore PVC-based membrane sensor selective for the silver ($Ag^+$) ion. Potentiometric investigations indicate a high affinity of this receptor for the silver ion. Seven membranes have been fabricated with different compositions, with the best performance shown by the membrane with an ionophore composition (w/w) of: 1.0 mg, PVC: 33.0 mg, DOA: 66.0 mg in 1.0 mL THF. The sensor worked well within a wide concentration range of $1.0{\times}10^{-2}$ to $1.0{\times}10^{-7}$ M, at pH 5, at room temperature (slope 57.4 mV/dec.), and with a rapid response time of 9 s; the sensor also showed good selectivity towards the silver ion over a huge number of interfering cations, with the highest selectivity coefficient for $Hg^{2+}$ at -3.7. Thus far, the best lower detection limit was $4.0{\times}10^{-8}$ M.

Comparison of Arrhenius and VTF Description of Ion Transport Mechanism in the Electrolytes (전해질 이온이동 기작 기술을 위한 아레니우스 모델 및 VTF 모델 비교)

  • Kim, Hyoseop;Koo, Bonhyeop;Lee, Hochun
    • Journal of the Korean Electrochemical Society
    • /
    • v.23 no.4
    • /
    • pp.81-89
    • /
    • 2020
  • To understand the performance of the electrochemical device, the analysis of the mechanism of ionic conduction is important. However, due to the ionic interaction in the electrolyte and the complexity of the electrolyte structure, a clear analysis method of the ion conduction mechanism has not been proposed. Instead, a variety of mathematical models have been devised to explain the mechanism of ion conduction, and this review introduces the Arrhenius and Vogel-Tammann-Fulcher (VTF) model. In general, the above two mathematical models are used to describe the temperature dependence of the transport properties of electrolytes such as ionic conductivity, diffusion coefficient, and viscosity, and a suitable model can be determined through the linearity of the graph consisting of the logarithm of the moving property and the reciprocal of the temperature. Currently, many electrolyte studies are evaluating the suitability of the above two models for electrolytes by varying the composition and temperature range, and the ion conduction mechanism analysis and activation energy calculation are in progress. However, since there are no models that can accurately describe the transport properties of electrolytes, new models and improvement of existing models are needed.

Development of Pore-Filled Anion-Exchange Membranes for High Performance Reverse Electrodialysis (고성능 역전기투석을 위한 세공충진 음이온교환막의 개발)

  • Kim, Do-Hyeong;Song, Hyeon-Bee;Yoon, Kyungseok;Kang, Moon-Sung
    • Membrane Journal
    • /
    • v.32 no.5
    • /
    • pp.336-347
    • /
    • 2022
  • Reverse electrodialysis (RED) is one of the promising eco-friendly renewable energy technologies which can generate electricity from the concentration difference between seawater and freshwater by using ion-exchange membranes as a diaphragm. The ion-exchange membrane is a key component that determines the performance of RED, and must satisfy requirements such as low electrical resistance, high permselectivity, excellent durability, and low manufacturing cost. In this study, pore-filled anion-exchange membranes were fabricated using porous polymer substrates having various thicknesses and porosity, and the effects of ion-exchange polymer composition and membrane thickness on the power generation performance of RED were investigated. When the electrical resistance of the ion-exchange membrane is sufficiently low, it can be confirmed that the RED power generation performance is mainly influenced by the apparent permselectivity of the membrane. In addition, it was confirmed that the apparent permselectivity of the membranes can be improved through IEC, crosslinking degree, membrane thickness, surface modification, etc., and the optimum condition must be found in consideration of the trade-off relationship with electrical resistance.

Electrical Characteristics of Cathode Li($Mn_{1-\delta}$$M_{\delta}$)$_2$$O_4$ Substituted by Transition Metals in Li-Ion Secondary Batteries (전이금속 치환 리튬이온 이차전지 정극 Li($Mn_{1-\delta}$$M_{\delta}$)$_2$$O_4$의 전기적 특성)

  • 박재홍;김정식;유광수
    • Journal of the Korean Ceramic Society
    • /
    • v.37 no.5
    • /
    • pp.466-472
    • /
    • 2000
  • As cathode materials of LiMn2O4-based lithium-ion secondary batteries, Li(Mn1-$\delta$M$\delta$)2O4 (M=Ni and Co, $\delta$=0, 0.05, 0.1 and 0.2) materials which Co and Ni are substituted for Mn, were syntehsized by the solid state reaction at 80$0^{\circ}C$ for 48 hours. No second phases were formed in Li(Mn1-$\delta$M$\delta$)2O4 system with substitution of Co. However, substitution of Ni caued to form a second phase of NiO when its composition exceeded over 0.2 of $\delta$ in Li(Mn1-$\delta$M$\delta$)2O4. As the results of charging-discharging test, the maximum capacity of Li(Mn1-$\delta$M$\delta$)2O4 appeared in $\delta$=0.1 for both Co and Ni. Also, Li(Mn1-$\delta$M$\delta$)2O4 electrode showed higher capacity and better cycle performance than LiMn2O4.

  • PDF

Low Temperature Deposition and Characteristics of ATO Thin Films by Ion Beam Sputtering (이온빔 스퍼터링법에 의한 ATO박막의 저온 증착 특성)

  • Koo, Chang-Young;Lee, Hee-Young;Hong, Min-Ki;Kim, Kyung-Joong;Kim, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.05b
    • /
    • pp.307-310
    • /
    • 2000
  • Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

  • PDF

Crystallization and Electrical Properties of SBN60 Thin Films Prepared by Ion Beam Sputter Deposition

  • Jang, Jae-Hoon;Jeong, Seong-Won;Lee, Hee-Young
    • Transactions on Electrical and Electronic Materials
    • /
    • v.6 no.1
    • /
    • pp.10-13
    • /
    • 2005
  • $Sr_{0.6}Ba_{0.4}Nb_{2}O_{6}$, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the $Ar:O_{2}$ gas ratio was controlled during deposition onto $Pt(100)/TiO_{2}/SiO_{2}/Si$ substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at $650{\sim}800{\cric}C$. It was found that the film orientation was dependent upon $Ar:O_{2}$ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at $4.3{\times}10^{-4}$ torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately $10{\mu}C/cm^{2}$, 60 kV/cm, and 615, respectively.

Electrochemical Sensor for the Selective Determination of Prindopril Based on Phosphotungestic Acid Plastic Membrane

  • Zareh, Mohsen M.;Wasel, Anower M.;Alkreem, Yasser M. Abd
    • Bulletin of the Korean Chemical Society
    • /
    • v.34 no.10
    • /
    • pp.3088-3092
    • /
    • 2013
  • A novel PVC membrane sensor for perindopril based on perindopril-phosphotungstate ion pair complex was prepared. The influence of membrane composition (i.e. percent of PVC, plasticizer, ion-pair complex, and kind of plasticizer), inner solution, pH of test solution and foreign cations on the electrode performance was investigated. The optimized membrane demonstrates Nernstian response ($30.9{\pm}1.0$ mV per decade) for perindopril cations over a wide linear range from $9.0{\times}10^{-7}$ to $1{\times}10^{-2}$ M at $25^{\circ}C$. The potentiometric response is independent of the pH in the range of 4.0-9.5. The proposed sensor has the advantages of easy preparation, fast response time. The selectivity coefficients indicate excellent selectivity for perindopril over many common cations (e.g., $Na^+$, $K^+$, $Mg^{2+}$, $Cu^{2+}$, $Ni^{2+}$, rhamnose, maltose, glycine and benzamide. The practical applications of this electrode was demonstrated by measuring the concentrations of perindopril in pure solutions and pharmaceutical preparations with satisfactory results.