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Crystallization and Electrical Properties of SBN60 Thin Films Prepared by Ion Beam Sputter Deposition

  • Jang, Jae-Hoon (Department of Materials Science and Engineering, Yeungnam University) ;
  • Jeong, Seong-Won (Department of Materials Science and Engineering, Yeungnam University) ;
  • Lee, Hee-Young (Department of Materials Science and Engineering, Yeungnam University)
  • Published : 2005.02.01

Abstract

$Sr_{0.6}Ba_{0.4}Nb_{2}O_{6}$, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the $Ar:O_{2}$ gas ratio was controlled during deposition onto $Pt(100)/TiO_{2}/SiO_{2}/Si$ substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at $650{\sim}800{\cric}C$. It was found that the film orientation was dependent upon $Ar:O_{2}$ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at $4.3{\times}10^{-4}$ torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately $10{\mu}C/cm^{2}$, 60 kV/cm, and 615, respectively.

Keywords

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