• Nuclear Engineering and Technology
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• v.38 no.4
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• pp.319-326
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• 2006

A brief review is presented on the ion beam application in science and technology. ion beams are used very effectively in various fields of science and technology, on the basis of advance in accelerator technology and experimental techniques for ion beam utilization. Recent progress in this field is reviewed in terms of the direct ion beam utilization like ion beam analysis, and the utilization of neutrons as secondary particles.

• Mass Spectrometry Letters
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• v.14 no.4
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• pp.147-152
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• 2023

The increasing demand for two-dimensional imaging analysis using optical or electronic microscopic techniques has led to an increase in the use of simple one-dimensional and two-dimensional mass spectrometry imaging. Among these imaging methods, secondary-ion mass spectrometry (SIMS) has the best spatial resolution using a primary ion beam with a relatively insignificant beam diameter. Until recently, SIMS, which uses high-energy primary ion beams, has not been used to analyze molecules. However, owing to the development of cluster ion beams, it has been actively used to analyze various organic molecules from the surface. Researchers and commercial SIMS companies are developing cluster ion beams to analyze biological samples, including amino acids, peptides, and proteins. In this study, a water droplet ion beam for surface analysis was realized. Water droplets ions were generated via electrospraying in a vacuum without desolvation. The generated ions were accelerated at an energy of 10 keV and collided with the target sample, and secondary ion mass spectra were obtained for the generated ions using ToF-SIMS. Thus, the proposed water droplet ion-beam device showed potential applicability as a primary ion beam in SIMS.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.4
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• pp.479-486
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• 2012

Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.

• Applied Microscopy
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• v.48 no.2
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• pp.49-53
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• 2018

A successful transmission electron microscope (TEM) analysis is closely related to the preparation of the TEM specimen and should be followed by the suitable TEM specimen preparation depending on the purpose of analysis and the subject materials. In the case of the Si-based anode material, lithium atoms of formed Li silicide were removed due to ion beam and electron beam during TEM specimen preparation and TEM observation. To overcome the problem, we proposed a new technique to make a TEM specimen without the ion beam damage. In this study, two types of test specimens from the Si-based anode material of Li-ion battery were prepared by respectively adopting the only focused ion beam (FIB) method and the new FIB-ultramicrotome method. TEM analyses of two samples were conducted to compare the Ga ion damage of the test specimen.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.581-584
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• 2005

Ion beam processing is one of the key technologies to realize mastless and resistless sub 50nm nano fabrication. Unwanted effects, however, may occur since an energetic ion can interact with a target surface in various ways. Depending on the ion energy, the interaction can be swelling, deposition, sputtering, re-deposition, implantation, damage, backscattering and nuclear reaction. Sputtering is the fundamental mechanisms in ion beam induced direct patterning. Re-deposition and backscattering are unwanted mechanisms to avoid. Therefore understanding of ion beam-solid interaction should be advanced for further ion beam related research. In this paper we simulate some important interaction mechanisms between energetic incident ions and solid surfaces and the results are compared with experimental data. The simulation results are agreed well with experimental data.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1348-1358
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• 1989

We analyzed electrostatic lens with axi-symmetic configurations using the analytic equation for a single apertured lens. The developed computer code afforded to estimate ion optical properties such as ion trajectories, aberrations and ion beam diameters, and was found to have advantages of a shorter calculation time. The calculated ion optical properties for several types of electrostatic lens were in good agreement with Burghard's ones and it was seem that 20% reduction of ion beam diameter could be obtained by the change of aperture diameters.

• The Journal of Korean Academy of Prosthodontics
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• v.30 no.2
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• pp.135-154
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• 1992

This study was performed to analyze bond strength, the alterations of the interfaces between metal films which are populary used and considered to contribute to the chemical reaction with porcelain, according to constant ion- beam- mixing, and the relation between interfacial chemical reactions and bond strength in metal/porcelain specimens. For this study, three seperate metals : selected-gold, indium and tin were chosen ; each to be bonded to a seperate body porcelain. Bonding occurs when the metal is deposited to the body porcelain using a vacuum evaporator. The vacuum evaporator used $10^{-5}\sim10^{-6}$ Torr vacuum states for the evaporation of various metals (Au, Sn, In). Ion-beam-mixing of the porcelain/metal interfaces caused reactions when the Ar+ was implanted into thin films using a 80 KeV accelerator. These ion-beam-mixed specimens were then compared with an unmixed control group. An analysis of bond strength and ionic changes between the the metal and porcelain was performed by electron spectroscopy of chemical analysis (ESCA) and scratch test. The finding led to the following conclusions : 1. Light microscopic views of the scratch test : The ion-beam-mixed Au/porcelain specimen showed narrower scratched streams than the unmixed specimen. However, the Sn/porcelain, In/porcelain specimens showed no differences in the two conditions. 2. Acoustic emissions in scratch tests : The ion-mixed Au/porcelain, In/porcelain specimens showed signals closer to the metal/porcelain interfaces than unmixed specimens. Conversely, the ion-mixed Sn/porcelain specimen showed more critical signals in superficial portions than unmixed specimens. 3. After ion- beam-mixing, the Au/porcelain specimen showed apparently increased bond strength, and the In/porcelain specimen showed very slightly increased bond strength. However, the Sn/porcelain specimen showed no differences between ion mixed specimen and the unmixed one. 4. ESCA analysis : The ion-beam-mixed Au/porcelain specimen showed a higher peak separated value (4.3eV) than that of the unmixed specimen(3.65eV), the ion-beam-mixed In/porcelain specimen showed a higher peak separated value (9.43eV) than that of the unmixed specimen(7.6eV) and the ion-beam-mixed Sn/porcelain specimen showed a higher peak separated value (8.79eV) than that of the unmixed specimen(8.5eV). 5. Interfacial changes were observed in the ion-mixed Au/porcelain, In/porcelain and Sn/porcelain specimens. Especially, significant interfacial changes were measured in the ion- mixed Sn/porcelain specimen. Tin dioxide(SnO2) and a combination of pure tin and tin dioxide (Sn+SnO2) were produced. 6. In the Au/porcelain specimen, the interfacial chemical reaction showed increased bond strength between gold and porcelain substrate. But, in the In/porcelain, Sn/porcelain specimens, interfacial chemical reactions did not affected the bond strength between metal and porcelain substrate. Especially, bonding strength on the ion mixed Sn/porcelain specimen showed the least amount of difference.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.597-598
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• 2009

• Applied Microscopy
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• v.45 no.4
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• pp.208-213
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• 2015

Nanomanipulators installed in focused ion beam (FIB), which is used in the lift-out of lamella when preparing transmission electron microscopy specimens, have recently been employed for electrical resistance measurements, tensile and compression tests, and in situ reactions. During the pick-up process of a single nanowire (NW), there are crucial problems such as Pt, C and Ga contaminations, damage by ion beam, and adhesion force by electrostatic attraction and residual solvent. On the other hand, many empirical techniques should be considered for successful pick-up process, because NWs have the diverse size, shape, and angle on the growth substrate. The most important one in the in-situ precedence, therefore, is to select the optimum pick-up process of a single NW. Here we provide the advanced methodologies when manipulating NWs for in-situ mechanical and electrical measurements in FIB.