• Membrane and Water Treatment
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• v.15 no.1
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• pp.31-39
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• 2024

The flow in a nanopore of filtration membrane is often multiscale and consists of both the adsorbed layer flow and the intermediate continuum fluid flow. There is a controversy on which interface the slippage should occur in the nanopore filtration: On the adsorbed layer-pore wall interface or on the adsorbed layer-continuum fluid interface? What is the difference between these two slippage effects? We address these subjects in the present study by using the multiscale flow equations incorporating the slippage on different interfaces. Based on the limiting shear strength model for the slippage, it was found from the calculation results that for the hydrophobic pore wall the slippage surely occurs on the adsorbed layer-pore wall interface, however for the hydrophilic pore wall, the slippage can occur on either of the two interfaces, dependent on the competition between the interfacial shear strength on the adsorbed layer-pore wall interface and that on the adsorbed layer-continuum fluid interface. Since the slippage on the adsorbed layer-pore wall interface can be designed while that on the adsorbed layer-continuum fluid interface can not, the former slippage can result in the flux through the nanopore much higher than the latter slippage by designing a highly hydrophobic pore wall surface. The obtained results are of significant interest to the design and application of the interfacial slippage in nanoporous filtration membranes for both improving the flux and conserving the energy cost.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.24-31
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• 1998

Interfacial effect in polymetric composites have been studied extensively. This report deals mainly with the effects of interfacial space charge and interface structure. A model for the dynamic process of interfacial space charge accumulation is proposed. The new model might interpret some interface phenomena which is difficult to be explained in terms of traditional Maxwell-Wagner theory. An interface structure is also presented, by which the importance of surface treatment of glass Fiber for improving the properties of FRP could be well understood.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.3
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• pp.61-66
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• 1993

The interface properties of Fluoride/GaAs structures were investigated. It was foung that rapid thermal annealing(RTA) typically 800-850$^{\circ}C$for 1 min, was useful for improving the interface properties of that structures. The analysis by means of SIMS indicated that interdiffusion of each constitutional atom through the interface was negligible. The interfacial atom bonding model for RTA treatment was proposed. Bases on these results, inversion-type GaAs MISFET was fabricated using standard planar technologies.

• Journal of Adhesion and Interface
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• v.23 no.4
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• pp.122-129
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• 2022

In this study, the hydrophilicity of the metal fiber is improved by introducing an oxygen-containing functional group to the fiber surface after treatment of the metal fiber using the oxygen plasma treatment time as an experimental variable. For the surface modification of metal fibers, changes in surface properties before and after plasma treatment were observed using SEM and x-ray photoelectron spectroscopy (XPS). In order to observe the effect of the plasma treatment time on the surface of the metal fiber, the change in contact angle of the metal fiber with respect to a polar solvent and a non-polar solvent was measured. After calculating the change in surface free energy using the measured contact angle, the contact angle and the surface free energy for metal fibers before and after oxygen plasma treatment were compared, and the correlation with the adhesion work was also considered. The microdroplet specimens were prepared to investigate the effect of surface changes of these metal fibers on the improvement of shear strength at the interface when combined with other materials and the interfacial shear strength was measured, and the correlation with the adhesion work was also identified. Therefore, the oxygen plasma treatment of the metal fiber results in an increase in the physical surface area on the fiber surface and a change in contact angle and surface energy according to the introduction of the oxygen-containing functional group on the surface. This surface hydrophilization resulted in improving the interfacial shear strength with the polymer resin.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.573-579
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• 2009

Titanium/aluminum/stainless steel(Ti/Al/STS) clad materials have received much attention due to their high specific strength and corrosion-resisting properties. However, it is difficult to fabricate these materials, because titanium oxide is easily formed on the titanium surface during heat treatment. The aim of the present study is to derive optimized cladding conditions and thereupon obtain the stable quality of Ti/Al/STS clad materials. Ti sheets were prepared with and without pre-heat treatment and Ti/Al/STS clad materials were then fabricated by cold rolling and a post-heat treatment process. Microstructure of the Ti/Al and STS/Al interfaces was observed using a Scanning Electron Microscope(SEM) and an Energy Dispersed X-ray Analyser(EDX) in order to investigate the effects of Ti pre-heat treatment on the bond properties of Ti/Al/STS clad materials. Diffusion bonding was observed at both the Ti/Al and STS/Al interfaces. The bonding force of the clad material with non-heat treated Ti was higher than that with pre-heat treated Ti before the cladding process. The bonding force decreased rapidly beyond $400^{\circ}C$, because the formed Ti oxide inhibited the joining process between Ti and Al. Bonding forces of STS/Al were lower than those of Ti/Al, because brittle $Fe_3Al$, $Al_3Fe$ intermetallic compounds were formed at the interface of STS/Al during the cladding process. In addition, delamination of the clad material with pre-heat treated Ti was observed at the Ti/Al interface after a cupping test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.153-157
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• 2006

In this work, the effects of plasma treatment on surface properties of semiconductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy (XPS) and contact angles, The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths, The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds(SiOx, x=3${\~}$4) increased, It is thought that semiconductive silicone rubber surfaces treated with plasma discharge led to an increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. However, the oxygen plama for 20 minute produces a damaged oxidized semiconductive silicone rubber layer, which acts as a weak layer producing a decrease in T-peel strength, These results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semiconductive silicone rubber.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.165-168
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• 2000

We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. A low-dielectric Sr$_2$AlTaO$_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2$Cu$_3$O$_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the edge of the YBCO base electrode using high energy ion-beam treatment prior to deposition of the YBCO counter electrode. We investigated the effects of high energy ion-beam treatment, annealing, and counter electrode deposition temperature on the characteristics of the interface-controlled Josephson junctions. The junction parameters such as T$_c$, I$_c$c, R$_n$ were measured and discussed in relation to the barrier layer depending on the process parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.276-276
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• 2012

The interface morphology of organic active layers is known to play a crucial role in the performance of organic photovoltaic (OPV) cells. Especially, a controlled nanostructure with a large contact area between electron donor (D) and acceptor (A) layers is necessary to improve the power conversion efficiency (PCE) of the cells since the short exciton diffusion lengths in organic semiconductors limit the charge (hole and electron) separation before excitons recombination. In this work, we developed simple solvent treating methods to fabricate a nanostructured DA interface and applied them to enhance the PCE of ZnPc/C60 based small molecule OPV cells. Interestingly, it was observed that the solvent treatment on the donor layer prior to the deposition of the acceptor layer resulted in a significant decrease in PCE, which was due to an existence of undesirable voids at the DA interface. Instead, the solvent vapor treatment after the DA bilayer formation led to densely packed and well dispersed DA contacts. Consequently, 3-fold enhancement of PCE as compared to the untreated bilayer cell was accomplished.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.