• 한국HCI학회:학술대회논문집
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• 2007.02b
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• pp.185-192
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• 2007

음성 사용자 인터페이스(Voice User Interface, 이하 VUI) 는 음성을 매개로 일어나는 인간과 기계 간 인터페이스를 뜻한다. 음성 인식율의 향상과 음성 재생 장치의 발달에 힘입어 최근 들어 휴대폰과 카 네비게이션 시스템에 주로 적용되고 있다. 최근 이러한 경향은 A/V 시스템 등 가전제품(Domestic Appliance) 에도 확대되고 있는데 본 연구에서는 사용자와 필수적이고 빈번한 상호작용이 일어나는 백색 가전을 대상으로 사용자를 만족시키는 음성 인터페이스의 주요 속성 중 음성 생성(Speech Generation)과 관련된 음성 표현을 중점 연구하였다. 연구방법으로 먼저 주부들이 느끼는 가전에서의 문제점과 VUI 로서 해결가능성에 대하여 F.G.I. 를 통하여 조사하여 주요 이슈를 도출하고, 대표적 백색 가전인 에어컨, 세탁기, 김치냉장고, 냉장고, 식기세척기, 오븐레인지 등 6개 제품에 대하여 음성의 물리적 특성, 내용적 특성, 기능에 따른 배치에 대하여 조건에 따라 다양한 프로토타입을 제작한 후 실제 환경과 유사한 실험실 상황에서 사용자의 선호도, 적합도 및 수행을 측정하였다. 연구 결과 각 이슈에 따라 가전제품에 적합한 VUI 가이드라인 특성을 찾아내었다.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.70-73
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• 2003

Sum-frequency vibrational spectroscopy has recently been used to investigate the surface of the various polymers and was able to find the chemical compositions and structures specific to the surface. Here we report our studies on two specific polymer samples to demonstrate its capability. Polyimide thin films were made by spin coating on fused quartz and $CaF_2$ substrates. The sum-frequency signal originating mainly from the air/polymer interface showed markedly different spectra, indicating the structural change of the polymer surface depending on the underlying substrate. Various polyethylene surfaces were also investigated by sum-frequency vibrational spectroscopy. The surface of polyethylene samples in the CH-region showed different sum-frequency spectra, presumably due to the trace amount of additives having much higher concentration at the air/polymer interface. These examples demonstrate the surface and interface of the polymer could have different structure and chemical composition from those of a bulk, which can be studied effectively by surface nonlinear optical spectroscopy.

• The Journal of Korean Association of Computer Education
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• v.10 no.3
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• pp.67-73
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• 2007

In this paper, we review essential constituents of a dialogue interface system and propose practical methods to implement the each constituent. The implemented system consists of a discourse manager, an intention analyzer, a named entity recognizer, a SQL query generator, and a response generator. In the progress of implementation, the intention analyzer uses a maximum entropy model based on statistics because the domain dependency of the intention analyzer is comparatively low. The others use a simple pattern matching method because they needs high domain portability. In the experiments in a schedule arrangement domain, the implemented system showed the precision of 88.1% in intention analysis and the success rate of 83,4% in SQL query generation.

• The KIPS Transactions:PartD
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• v.12D no.7 s.103
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• pp.979-984
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• 2005

Many web-based Information systems require degrees of adaptation of the system's user interfaces to different client devices, users and tasks. We describe a new approach to providing adaptable client interfaces for web-based Information systems that allow a developer to specify a web-based interface using a high-level mark-up language. At run-time this single interface description is used to automatically provide for multiple web devices This approach allows developers to much more easily construct and maintain web-based user interfaces than other current approaches.

• Journal of KIISE:Computing Practices and Letters
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• v.13 no.6
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• pp.402-406
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• 2007

Rich Internet Application(RIA) is one of the Web 2.0 technologies and is expected to be a next generation user interface technique which allows flexible and dynamic manipulation for Web searches. This paper addresses a personalization mechanism for advanced Web search using RIA for abundant user interactions. We devised a dynamic and graphical user interface instead of previous text-based searches and a client side application for storing personal preference information. In this research, we implemented the graphical personalized search manager using Yahoo web search API and widget, and demonstrated its effectiveness by performing some experiments with various query terms and representative predicates.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.699-702
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• 2009

Due to the importance of the SiGe/Si heterostructure in the fields of thermoelectric and electronic applications, SiGe/Si heterostructures have been extensively investigated. For practical applications, thermal stability of the heterostructure during the thermoelectric power generation or fabrication process of electronic devices is of great concern. In this work, we focused on the effect of thermal annealing on the defect configuration in the SiGe/Si heterostructure. The formation mechanism of planar defects in an annealed SiGe/Si heterostructure was investigated by transmission electron microscopy. Due to the interdiffusion of Si and Ge, interface migration phenomena were observed in annealed heterostructures. Because of the strain gradient in the migrated region between the original interface and the migrated interface, the glide of misfit dislocation was observed in the region and planar defects were produced by the interaction of the gliding misfit dislocations. The planar defects were confined to the migrated region, and dislocation pileup by strain gradient was the origin of the confinement of the planar defect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.47-50
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• 2000

This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.759-761
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• 2011

Recently, there is study about interface for user convince. this users interface technology can apply to UI depend on user choice. For that, W3C study various technology which is N-screen service on different device, provide consistent service, and UI adjust service depends on user preference. Therefore, we need UI study based on this model and standard technology. In this paper, study UI technology based on basic model to develop UI for user's convenience. So it can be useful to apply next-generation Web applications and secure web-application measure plans.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.569-574
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• 2007

In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.